Investigation and Evaluation of Solid-State Marx Pulse Generator Based on 3-D Busbar
SiC-MOSFET has been widely used in nanosecond pulse power generators due to its excellent switching characteristics. The solid-state Marx generator using SiC-MOSFET has the advantages of modularity, flexible adjustment, and economic reliability. However, due to the limitation of the busbar loop'...
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| Veröffentlicht in: | IEEE transactions on plasma science 2021-05, Vol.49 (5), p.1597-1604 |
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| creator | Ma, Jianhao Yu, Liang Sun, Wenjie Dong, Shoulong Gao, Liangxi Yao, Chenguo |
| description | SiC-MOSFET has been widely used in nanosecond pulse power generators due to its excellent switching characteristics. The solid-state Marx generator using SiC-MOSFET has the advantages of modularity, flexible adjustment, and economic reliability. However, due to the limitation of the busbar loop's parasitic inductance, the excellent switching characteristics of SiC-MOSFETs have not yet been fully utilized in solid-state Marx. This article discusses the PCB wiring structure of the single-module of solid-state Marx and the influence of its superimposed spatial distribution parameters on the output pulse waveform. The principle of 3-D busbar structure and mutual inductance cancellation method to reduce the parasitic inductance of pulse busbar loop is proposed. And verify the above principle through electromagnetic simulation and four-stage superposition experiment. The parasitic inductance of the busbar loop is less than 4 nH. The voltage edge of the output pulse is further reduced, the current rise/fall speed is increased by about 2.3 times, and the switching voltage overshoot is reduced by 80%. And the proposed structure effectively suppresses the gate bounce and improves the solid-state Marx pulse characteristics. Finally, the stability and reliability of the system are improved too. |
| doi_str_mv | 10.1109/TPS.2021.3073489 |
| format | Article |
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The solid-state Marx generator using SiC-MOSFET has the advantages of modularity, flexible adjustment, and economic reliability. However, due to the limitation of the busbar loop's parasitic inductance, the excellent switching characteristics of SiC-MOSFETs have not yet been fully utilized in solid-state Marx. This article discusses the PCB wiring structure of the single-module of solid-state Marx and the influence of its superimposed spatial distribution parameters on the output pulse waveform. The principle of 3-D busbar structure and mutual inductance cancellation method to reduce the parasitic inductance of pulse busbar loop is proposed. And verify the above principle through electromagnetic simulation and four-stage superposition experiment. The parasitic inductance of the busbar loop is less than 4 nH. The voltage edge of the output pulse is further reduced, the current rise/fall speed is increased by about 2.3 times, and the switching voltage overshoot is reduced by 80%. And the proposed structure effectively suppresses the gate bounce and improves the solid-state Marx pulse characteristics. Finally, the stability and reliability of the system are improved too.</description><identifier>ISSN: 0093-3813</identifier><identifier>EISSN: 1939-9375</identifier><identifier>DOI: 10.1109/TPS.2021.3073489</identifier><identifier>CODEN: ITPSBD</identifier><language>eng</language><publisher>PISCATAWAY: IEEE</publisher><subject>3-D busbar ; Busbars ; Discharges (electric) ; Electric potential ; Generators ; Inductance ; Layout ; Marx generators ; Modularity ; MOSFETs ; nanosecond pulse generator ; Nanosecond pulses ; Parasitics (electronics) ; PCB ; Physical Sciences ; Physics ; Physics, Fluids & Plasmas ; Polychlorinated biphenyls ; Pulse generation ; Pulse generators ; Science & Technology ; SiC-MOSFET ; Solid state ; solid-state Marx ; Spatial distribution ; Switches ; Switching ; Voltage ; Waveforms ; Wiring</subject><ispartof>IEEE transactions on plasma science, 2021-05, Vol.49 (5), p.1597-1604</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>true</woscitedreferencessubscribed><woscitedreferencescount>8</woscitedreferencescount><woscitedreferencesoriginalsourcerecordid>wos000648334400011</woscitedreferencesoriginalsourcerecordid><citedby>FETCH-LOGICAL-c338t-8c815fa0f6e3a569d5839d38fe1630390908753cc9dafc50d76441f4fbb655573</citedby><cites>FETCH-LOGICAL-c338t-8c815fa0f6e3a569d5839d38fe1630390908753cc9dafc50d76441f4fbb655573</cites><orcidid>0000-0002-5684-0709 ; 0000-0002-1781-2756 ; 0000-0003-0267-356X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9416295$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27929,27930,39263,54763</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9416295$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ma, Jianhao</creatorcontrib><creatorcontrib>Yu, Liang</creatorcontrib><creatorcontrib>Sun, Wenjie</creatorcontrib><creatorcontrib>Dong, Shoulong</creatorcontrib><creatorcontrib>Gao, Liangxi</creatorcontrib><creatorcontrib>Yao, Chenguo</creatorcontrib><title>Investigation and Evaluation of Solid-State Marx Pulse Generator Based on 3-D Busbar</title><title>IEEE transactions on plasma science</title><addtitle>TPS</addtitle><addtitle>IEEE T PLASMA SCI</addtitle><description>SiC-MOSFET has been widely used in nanosecond pulse power generators due to its excellent switching characteristics. The solid-state Marx generator using SiC-MOSFET has the advantages of modularity, flexible adjustment, and economic reliability. However, due to the limitation of the busbar loop's parasitic inductance, the excellent switching characteristics of SiC-MOSFETs have not yet been fully utilized in solid-state Marx. This article discusses the PCB wiring structure of the single-module of solid-state Marx and the influence of its superimposed spatial distribution parameters on the output pulse waveform. The principle of 3-D busbar structure and mutual inductance cancellation method to reduce the parasitic inductance of pulse busbar loop is proposed. And verify the above principle through electromagnetic simulation and four-stage superposition experiment. The parasitic inductance of the busbar loop is less than 4 nH. The voltage edge of the output pulse is further reduced, the current rise/fall speed is increased by about 2.3 times, and the switching voltage overshoot is reduced by 80%. And the proposed structure effectively suppresses the gate bounce and improves the solid-state Marx pulse characteristics. Finally, the stability and reliability of the system are improved too.</description><subject>3-D busbar</subject><subject>Busbars</subject><subject>Discharges (electric)</subject><subject>Electric potential</subject><subject>Generators</subject><subject>Inductance</subject><subject>Layout</subject><subject>Marx generators</subject><subject>Modularity</subject><subject>MOSFETs</subject><subject>nanosecond pulse generator</subject><subject>Nanosecond pulses</subject><subject>Parasitics (electronics)</subject><subject>PCB</subject><subject>Physical Sciences</subject><subject>Physics</subject><subject>Physics, Fluids & Plasmas</subject><subject>Polychlorinated biphenyls</subject><subject>Pulse generation</subject><subject>Pulse generators</subject><subject>Science & Technology</subject><subject>SiC-MOSFET</subject><subject>Solid state</subject><subject>solid-state Marx</subject><subject>Spatial distribution</subject><subject>Switches</subject><subject>Switching</subject><subject>Voltage</subject><subject>Waveforms</subject><subject>Wiring</subject><issn>0093-3813</issn><issn>1939-9375</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><sourceid>HGBXW</sourceid><recordid>eNqNkM9LwzAUgIMoOKd3wUvAo3S-9CVtcnTz12DiYPNcsjaRymxm0k79782s6NVTEvi-F95HyCmDEWOgLpfzxSiFlI0QcuRS7ZEBU6gShbnYJwMAhQlKhofkKIQXAMYFpAOynDZbE9r6Wbe1a6huKnqz1euufzpLF25dV8mi1a2hD9p_0Hm3DobemcZ43TpPxzqYikYYk2s67sJK-2NyYHWkTn7OIXm6vVlO7pPZ4910cjVLSkTZJrKUTFgNNjOoRaYqIVFVKK1hGQIqUCBzgWWpKm1LAVWecc4st6tVJoTIcUjO-7kb7966uEbx4jrfxC-LVKSpYiKNc4YEeqr0LgRvbLHx9av2nwWDYteuiO2KXbvip11ULnrl3aycDWVtmtL8agCQcYnIebwxFmn5f3pSt99tJ65r2qie9WptzJ-iOMtSJfALy6yJUA</recordid><startdate>20210501</startdate><enddate>20210501</enddate><creator>Ma, Jianhao</creator><creator>Yu, Liang</creator><creator>Sun, Wenjie</creator><creator>Dong, Shoulong</creator><creator>Gao, Liangxi</creator><creator>Yao, Chenguo</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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The solid-state Marx generator using SiC-MOSFET has the advantages of modularity, flexible adjustment, and economic reliability. However, due to the limitation of the busbar loop's parasitic inductance, the excellent switching characteristics of SiC-MOSFETs have not yet been fully utilized in solid-state Marx. This article discusses the PCB wiring structure of the single-module of solid-state Marx and the influence of its superimposed spatial distribution parameters on the output pulse waveform. The principle of 3-D busbar structure and mutual inductance cancellation method to reduce the parasitic inductance of pulse busbar loop is proposed. And verify the above principle through electromagnetic simulation and four-stage superposition experiment. The parasitic inductance of the busbar loop is less than 4 nH. The voltage edge of the output pulse is further reduced, the current rise/fall speed is increased by about 2.3 times, and the switching voltage overshoot is reduced by 80%. And the proposed structure effectively suppresses the gate bounce and improves the solid-state Marx pulse characteristics. Finally, the stability and reliability of the system are improved too.</abstract><cop>PISCATAWAY</cop><pub>IEEE</pub><doi>10.1109/TPS.2021.3073489</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-5684-0709</orcidid><orcidid>https://orcid.org/0000-0002-1781-2756</orcidid><orcidid>https://orcid.org/0000-0003-0267-356X</orcidid></addata></record> |
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| subjects | 3-D busbar Busbars Discharges (electric) Electric potential Generators Inductance Layout Marx generators Modularity MOSFETs nanosecond pulse generator Nanosecond pulses Parasitics (electronics) PCB Physical Sciences Physics Physics, Fluids & Plasmas Polychlorinated biphenyls Pulse generation Pulse generators Science & Technology SiC-MOSFET Solid state solid-state Marx Spatial distribution Switches Switching Voltage Waveforms Wiring |
| title | Investigation and Evaluation of Solid-State Marx Pulse Generator Based on 3-D Busbar |
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