Memoryless nonlinearity in IT JL FinFET with spacer technology: Investigation towards reliability

This work investigates the reliability assessment of high-k spacer and the effect of temperature on the device analog/RF performance for Inverted ‘T' (IT) Junctionless (JL) FinFET. A systematic analysis is performed for different high-k spacer materials, like, SiO2, Si3N4, and HfO2 to improve t...

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Veröffentlicht in:	Microelectronics and reliability 2021-04, Vol.119, p.114072, Article 114072
Hauptverfasser:	Vandana, B., Mohapatra, S.K., Das, J.K., Pradhan, K.P., Kundu, A., Kaushik, B.K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analog/RF Engineering Engineering, Electrical & Electronic FinFET Junctionless MOSFET Linearity Low-k to high-k materials Nanoscience & Nanotechnology Physical Sciences Physics Physics, Applied Science & Technology Science & Technology - Other Topics Spacer Technology Temperature
Online-Zugang:	Volltext
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