Effects of swift heavy ion irradiation on the performance of HfO2-based resistive random access memory devices
In this work, the effects of 120 MeV Ag ion irradiation on the switching properties of Au/HfO 2 /Au-based Resistive Random Access Memory (RRAM) devices are reported. The ion fluence is varied between 5 × 10 10 and 5 × 10 12 ions/cm 2 while two device sizes, with active areas 10 µm × 10 µm and 20 µm ...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2021-02, Vol.32 (3), p.2973-2986 |
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| container_title | Journal of materials science. Materials in electronics |
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| creator | Arun, N. Sangani, L. D. Varma Vinod Kumar, K. Mangababu, A. Krishna, M. Ghanashyam Pathak, A. P. Nageswara Rao, S. V. S. |
| description | In this work, the effects of 120 MeV Ag ion irradiation on the switching properties of Au/HfO
2
/Au-based Resistive Random Access Memory (RRAM) devices are reported. The ion fluence is varied between 5 × 10
10
and 5 × 10
12
ions/cm
2
while two device sizes, with active areas 10 µm × 10 µm and 20 µm × 20 µm, are tested. In each case, 16 devices are subjected to ion irradiation and it is shown that the set voltages are generally lower and the spread in the switching voltages is reduced for the irradiated samples in comparison to the pristine devices. The existence of a critical dose of 5 × 10
11
ions/cm
2
up to which an improvement in the device performance is observed. Photoluminescence studies indicate the presence of oxygen-related vacancies in both pristine and irradiated samples, which may be the reason for the observed forming free switching behavior. Swift heavy ion irradiation is, thus, a simple but effective technique to tune the performance of HfO
2
-based resistive switching devices. The study also indicates the significance of radiation damage and reliability of these devices beyond a critical fluence. |
| doi_str_mv | 10.1007/s10854-020-05049-0 |
| format | Article |
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2
/Au-based Resistive Random Access Memory (RRAM) devices are reported. The ion fluence is varied between 5 × 10
10
and 5 × 10
12
ions/cm
2
while two device sizes, with active areas 10 µm × 10 µm and 20 µm × 20 µm, are tested. In each case, 16 devices are subjected to ion irradiation and it is shown that the set voltages are generally lower and the spread in the switching voltages is reduced for the irradiated samples in comparison to the pristine devices. The existence of a critical dose of 5 × 10
11
ions/cm
2
up to which an improvement in the device performance is observed. Photoluminescence studies indicate the presence of oxygen-related vacancies in both pristine and irradiated samples, which may be the reason for the observed forming free switching behavior. Swift heavy ion irradiation is, thus, a simple but effective technique to tune the performance of HfO
2
-based resistive switching devices. The study also indicates the significance of radiation damage and reliability of these devices beyond a critical fluence.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-020-05049-0</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Engineering ; Engineering, Electrical & Electronic ; Fluence ; Hafnium oxide ; Heavy ions ; Ion irradiation ; Materials Science ; Materials Science, Multidisciplinary ; Memory devices ; Optical and Electronic Materials ; Photoluminescence ; Physical Sciences ; Physics ; Physics, Applied ; Physics, Condensed Matter ; Radiation damage ; Random access memory ; Science & Technology ; Switching ; Technology</subject><ispartof>Journal of materials science. Materials in electronics, 2021-02, Vol.32 (3), p.2973-2986</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC part of Springer Nature 2021</rights><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC part of Springer Nature 2021.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>true</woscitedreferencessubscribed><woscitedreferencescount>9</woscitedreferencescount><woscitedreferencesoriginalsourcerecordid>wos000605535200010</woscitedreferencesoriginalsourcerecordid><citedby>FETCH-LOGICAL-c319t-f317a298cbfe9639564f2e95b0d77059fbdce8693942c9ee5c5ec265a0e72a433</citedby><cites>FETCH-LOGICAL-c319t-f317a298cbfe9639564f2e95b0d77059fbdce8693942c9ee5c5ec265a0e72a433</cites><orcidid>0000-0002-7826-5901</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-020-05049-0$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-020-05049-0$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>315,782,786,27931,27932,39265,41495,42564,51326</link.rule.ids></links><search><creatorcontrib>Arun, N.</creatorcontrib><creatorcontrib>Sangani, L. D. Varma</creatorcontrib><creatorcontrib>Vinod Kumar, K.</creatorcontrib><creatorcontrib>Mangababu, A.</creatorcontrib><creatorcontrib>Krishna, M. Ghanashyam</creatorcontrib><creatorcontrib>Pathak, A. P.</creatorcontrib><creatorcontrib>Nageswara Rao, S. V. S.</creatorcontrib><title>Effects of swift heavy ion irradiation on the performance of HfO2-based resistive random access memory devices</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><addtitle>J MATER SCI-MATER EL</addtitle><description>In this work, the effects of 120 MeV Ag ion irradiation on the switching properties of Au/HfO
2
/Au-based Resistive Random Access Memory (RRAM) devices are reported. The ion fluence is varied between 5 × 10
10
and 5 × 10
12
ions/cm
2
while two device sizes, with active areas 10 µm × 10 µm and 20 µm × 20 µm, are tested. In each case, 16 devices are subjected to ion irradiation and it is shown that the set voltages are generally lower and the spread in the switching voltages is reduced for the irradiated samples in comparison to the pristine devices. The existence of a critical dose of 5 × 10
11
ions/cm
2
up to which an improvement in the device performance is observed. Photoluminescence studies indicate the presence of oxygen-related vacancies in both pristine and irradiated samples, which may be the reason for the observed forming free switching behavior. Swift heavy ion irradiation is, thus, a simple but effective technique to tune the performance of HfO
2
-based resistive switching devices. The study also indicates the significance of radiation damage and reliability of these devices beyond a critical fluence.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Engineering</subject><subject>Engineering, Electrical & Electronic</subject><subject>Fluence</subject><subject>Hafnium oxide</subject><subject>Heavy ions</subject><subject>Ion irradiation</subject><subject>Materials Science</subject><subject>Materials Science, Multidisciplinary</subject><subject>Memory devices</subject><subject>Optical and Electronic Materials</subject><subject>Photoluminescence</subject><subject>Physical Sciences</subject><subject>Physics</subject><subject>Physics, Applied</subject><subject>Physics, Condensed Matter</subject><subject>Radiation damage</subject><subject>Random access memory</subject><subject>Science & Technology</subject><subject>Switching</subject><subject>Technology</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>HGBXW</sourceid><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNqNkF1LHDEUhkNR6Gr9A70K9FJSz-RjZnIpi62C4I1C70Imc1Ijnck2ya7svzfrFL0rQuCcwPvk5DyEfG3gewPQXeQGeiUZcGCgQGoGn8iqUZ1gsue_jsgKtOqYVJx_Jic5PwFAK0W_IvOV9-hKptHT_Bx8oY9od3sa4kxDSnYMthz6esoj0g0mH9NkZ4cH4trfcTbYjCNNmEMuYYc02XmME7XOYc50wimmPR1xF-r9Czn29k_Gs3_1lDz8uLpfX7Pbu58368tb5kSjC_Oi6SzXvRs86lZo1UrPUasBxq4Dpf0wOuxbLbTkTiMqp9DxVlnAjlspxCn5try7SfHvFnMxT3Gb5jrScKl5p9te85riS8qlmHNCbzYpTDbtTQPm4NUsXk31al69GqhQv0DPOESfXcAq4w08iAWlhOK1a2Adyqu_ddzOpaLnH0drWizpXBPzb0zvO_zney-sSJyj</recordid><startdate>20210201</startdate><enddate>20210201</enddate><creator>Arun, N.</creator><creator>Sangani, L. 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S.</creator><general>Springer US</general><general>Springer Nature</general><general>Springer Nature B.V</general><scope>BLEPL</scope><scope>DTL</scope><scope>HGBXW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><orcidid>https://orcid.org/0000-0002-7826-5901</orcidid></search><sort><creationdate>20210201</creationdate><title>Effects of swift heavy ion irradiation on the performance of HfO2-based resistive random access memory devices</title><author>Arun, N. ; Sangani, L. D. Varma ; Vinod Kumar, K. ; Mangababu, A. ; Krishna, M. Ghanashyam ; Pathak, A. P. ; Nageswara Rao, S. V. S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-f317a298cbfe9639564f2e95b0d77059fbdce8693942c9ee5c5ec265a0e72a433</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Engineering</topic><topic>Engineering, Electrical & Electronic</topic><topic>Fluence</topic><topic>Hafnium oxide</topic><topic>Heavy ions</topic><topic>Ion irradiation</topic><topic>Materials Science</topic><topic>Materials Science, Multidisciplinary</topic><topic>Memory devices</topic><topic>Optical and Electronic Materials</topic><topic>Photoluminescence</topic><topic>Physical Sciences</topic><topic>Physics</topic><topic>Physics, Applied</topic><topic>Physics, Condensed Matter</topic><topic>Radiation damage</topic><topic>Random access memory</topic><topic>Science & Technology</topic><topic>Switching</topic><topic>Technology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Arun, N.</creatorcontrib><creatorcontrib>Sangani, L. 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Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Arun, N.</au><au>Sangani, L. D. Varma</au><au>Vinod Kumar, K.</au><au>Mangababu, A.</au><au>Krishna, M. Ghanashyam</au><au>Pathak, A. P.</au><au>Nageswara Rao, S. V. S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of swift heavy ion irradiation on the performance of HfO2-based resistive random access memory devices</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><stitle>J MATER SCI-MATER EL</stitle><date>2021-02-01</date><risdate>2021</risdate><volume>32</volume><issue>3</issue><spage>2973</spage><epage>2986</epage><pages>2973-2986</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>In this work, the effects of 120 MeV Ag ion irradiation on the switching properties of Au/HfO
2
/Au-based Resistive Random Access Memory (RRAM) devices are reported. The ion fluence is varied between 5 × 10
10
and 5 × 10
12
ions/cm
2
while two device sizes, with active areas 10 µm × 10 µm and 20 µm × 20 µm, are tested. In each case, 16 devices are subjected to ion irradiation and it is shown that the set voltages are generally lower and the spread in the switching voltages is reduced for the irradiated samples in comparison to the pristine devices. The existence of a critical dose of 5 × 10
11
ions/cm
2
up to which an improvement in the device performance is observed. Photoluminescence studies indicate the presence of oxygen-related vacancies in both pristine and irradiated samples, which may be the reason for the observed forming free switching behavior. Swift heavy ion irradiation is, thus, a simple but effective technique to tune the performance of HfO
2
-based resistive switching devices. The study also indicates the significance of radiation damage and reliability of these devices beyond a critical fluence.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-020-05049-0</doi><tpages>14</tpages><orcidid>https://orcid.org/0000-0002-7826-5901</orcidid></addata></record> |
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| ispartof | Journal of materials science. Materials in electronics, 2021-02, Vol.32 (3), p.2973-2986 |
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| source | SpringerNature Journals; Web of Science - Science Citation Index Expanded - 2021<img src="https://exlibris-pub.s3.amazonaws.com/fromwos-v2.jpg" /> |
| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Engineering Engineering, Electrical & Electronic Fluence Hafnium oxide Heavy ions Ion irradiation Materials Science Materials Science, Multidisciplinary Memory devices Optical and Electronic Materials Photoluminescence Physical Sciences Physics Physics, Applied Physics, Condensed Matter Radiation damage Random access memory Science & Technology Switching Technology |
| title | Effects of swift heavy ion irradiation on the performance of HfO2-based resistive random access memory devices |
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