Platinum omega-Alkenyl Compounds as Chemical Vapor Deposition Precursors. Mechanistic Studies of the Thermolysis of Pt[CH2CMe2CH2CH=CH2](2 )in Solution and the Origin of Rapid Nucleation

The compound cis-bis(eta(1),eta(2)-2,2-dimethylpent-4-en-1-yl)platinum, Pt-[CH2CMe2CH2CH=CH2](2 ) (3), is a recently discovered chemical vapor deposition (CVD) precursor for the deposition of highly smooth platinum thin films without nucleation delays on a variety of substrates. This paper describes detailed mechanistic studies of the pathway by which 3 reacts upon being heated in solution. In various solvents between 90 and 130 degrees C, 3 decomposes to generate similar to 1 equiv of 4,4-dimethylpentenes by addition of a hydrogen atom to the pentenyl ligands in 3. The "extra" hydrogen atoms arise by dehydrogenation of other pentenyl ligands; some of these dehydrogenated ligands are released as methyl-substituted methylenecyclobutanes and cyclobutenes. A combination of isotope labeling and kinetic studies suggests that 3 decomposes by C-H activation of both allylic and olefinic C-H bonds to give transient platinum hydride intermediates, followed by reductive elimination steps to form the pentene products, but that the exact mechanism is solvent-dependent. In C6F6, solvent association occurs before C-H bond activation, and the rate-determining step for thermolysis is most likely the formation of a Pt sigma complex. In hydrocarbon solvents, the solvent is little involved before C-H bond activation, and the rate-determining step is most likely the formation of a Pt sigma complex only for gamma-C-H and epsilon-C-H bond activation, but cleavage or formation of a C-H bond for delta-C-H bond activation. A comparison of the thermolysis reactions under CVD conditions and in solution suggests that the high smoothness of the CVD-grown films is due in part to rapid nucleation (which is a consequence of the availability of low-barrier C=C bond dissociation pathways) and in part to the formation of carbon-containing species that passivate the Pt surface.