Investigation of Imprint in FE-HfO₂ and Its Recovery

Ferroelectric (FE)-HfO 2 -based FETs (FEFETs) are one of the most promising candidates for emerging memories. However, the FE material suffers from a unique reliability phenomenon known as imprint: the coercive voltage shifts during data retention, which has been regarded as a major issue for memory...

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Veröffentlicht in:	IEEE transactions on electron devices 2020-11, Vol.67 (11), p.4911-4917
Hauptverfasser:	Higashi, Y., Kaczer, B., Verhulst, A. S., O'Sullivan, B. J., Ronchi, N., McMitchell, S. R. C., Banerjee, K., Piazza, L. Di, Suzuki, M., Linten, D., Van Houdt, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitors Charge trapping Coercivity Domains Electric potential Electrical measurement Engineering Engineering, Electrical & Electronic ferroelectric (FE) Ferroelectricity Hafnium oxide imprint Iron Nucleation nucleation-limited-switching (NLS) Physical Sciences Physics Physics, Applied Recovery reliability Science & Technology Substrates Switches Switching Technology Temperature measurement Time measurement Voltage Voltage measurement
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