Analytical Modeling of Short-Channel Effects in MFIS Negative-Capacitance FET Including Quantum Confinement Effects

An analytical 2-D model of double-gate metal-ferroelectric-insulator-semiconductor-negative-capacitance FET (MFIS-NCFET), using Green's function approach, in the subthreshold region, is presented in this article. The explicit solution of coupled 2-D Landau-Devonshire and Poisson equations is an...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on electron devices 2020-11, Vol.67 (11), p.4757-4764
Hauptverfasser:	Pandey, Nilesh, Chauhan, Yogesh Singh
Format:	Artikel
Sprache:	eng
Schlagworte:	Analytical models Capacitance Electric potential Engineering Engineering, Electrical & Electronic Exact solutions Ferroelectric materials Ferroelectricity Formulas (mathematics) Green’s function Integrated circuit modeling Mathematical analysis Mathematical model metal–ferroelectric–insulator–semiconductor (MFIS) negative-capacitance FET (NCFET) Numerical models Physical Sciences Physics Physics, Applied Poisson equation Poisson equations Quantum confinement Schrodinger equation Science & Technology Semiconductor device modeling Technology Thickness Threshold voltage Two dimensional analysis Two dimensional models
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!