Nitrogen in carbon nanotubes
Nitrogen is an important impurity for doping carbon nanotubes (CNTs). It increases the conductivity of nanotubes, which is an important feature for field-effect transistors, emission and other nanoelectronic devices based on CNTs. In this work, we carried out a complex study of the behavior of nitro...
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| Veröffentlicht in: | Diamond and related materials 2020-11, Vol.109, p.108042, Article 108042 |
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| container_title | Diamond and related materials |
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| creator | Bulyarskiy, Sergey V. Bogdanova, Daria A. Gusarov, Georgy G. Lakalin, Alexander V. Pavlov, Alexander A. Ryazanov, Roman M. |
| description | Nitrogen is an important impurity for doping carbon nanotubes (CNTs). It increases the conductivity of nanotubes, which is an important feature for field-effect transistors, emission and other nanoelectronic devices based on CNTs. In this work, we carried out a complex study of the behavior of nitrogen in nanotubes, its effect on their morphology, X-ray photoelectron spectroscopy (XPS) and Raman scattering spectra. The aim of the article is to determine the binding energies of various types of nitrogen distribution in the graphene lattice of carbon nanotubes. The goal was achieved by comparing the XPS spectra, differential gravimetric analysis, and quantum chemical calculations. It was found that a graphite-like state has the highest binding energy, which is energetically favorable during doping and creates donor centers for carbon nanotubes. Therefore, doping with nitrogen increases the conductivity of the nanotubes in most cases.
[Display omitted]
•A complex study of N behavior in MWCNTs•Manifestation of lattice distortion in Raman spectra•A new method to determine the N concentration in CNTs•Quantum-chemical calculation of the binding energy for N in N-doped CNT•Thermodynamic parameters for N-doped CNT based on joint spectroscopic analysis |
| doi_str_mv | 10.1016/j.diamond.2020.108042 |
| format | Article |
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[Display omitted]
•A complex study of N behavior in MWCNTs•Manifestation of lattice distortion in Raman spectra•A new method to determine the N concentration in CNTs•Quantum-chemical calculation of the binding energy for N in N-doped CNT•Thermodynamic parameters for N-doped CNT based on joint spectroscopic analysis</description><identifier>ISSN: 0925-9635</identifier><identifier>EISSN: 1879-0062</identifier><identifier>DOI: 10.1016/j.diamond.2020.108042</identifier><language>eng</language><publisher>LAUSANNE: Elsevier B.V</publisher><subject>Binding energy ; Binding energy of nitrogen within a graphene lattice ; Carbon ; Carbon nanotubes ; Doping ; Field effect transistors ; Graphene ; Gravimetric analysis ; Materials Science ; Materials Science, Coatings & Films ; Materials Science, Multidisciplinary ; Morphology ; Nanoelectronics ; Nanotechnology devices ; Nitrogen ; Photoelectrons ; Physical Sciences ; Physics ; Physics, Applied ; Physics, Condensed Matter ; Quantum chemistry ; Raman spectra ; Science & Technology ; Semiconductor devices ; Spectrum analysis ; Technology ; X ray photoelectron spectroscopy</subject><ispartof>Diamond and related materials, 2020-11, Vol.109, p.108042, Article 108042</ispartof><rights>2020 Elsevier B.V.</rights><rights>Copyright Elsevier BV Nov 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>true</woscitedreferencessubscribed><woscitedreferencescount>19</woscitedreferencescount><woscitedreferencesoriginalsourcerecordid>wos000579819400041</woscitedreferencesoriginalsourcerecordid><citedby>FETCH-LOGICAL-c337t-7cbb9b9db62ac5040ebd11a9bd8aef2b652e8bf74aba63eac9a4d2441896925a3</citedby><cites>FETCH-LOGICAL-c337t-7cbb9b9db62ac5040ebd11a9bd8aef2b652e8bf74aba63eac9a4d2441896925a3</cites><orcidid>0000-0001-5789-6619 ; 0000-0002-9777-746X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.diamond.2020.108042$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>315,781,785,3551,27928,27929,45999</link.rule.ids></links><search><creatorcontrib>Bulyarskiy, Sergey V.</creatorcontrib><creatorcontrib>Bogdanova, Daria A.</creatorcontrib><creatorcontrib>Gusarov, Georgy G.</creatorcontrib><creatorcontrib>Lakalin, Alexander V.</creatorcontrib><creatorcontrib>Pavlov, Alexander A.</creatorcontrib><creatorcontrib>Ryazanov, Roman M.</creatorcontrib><title>Nitrogen in carbon nanotubes</title><title>Diamond and related materials</title><addtitle>DIAM RELAT MATER</addtitle><description>Nitrogen is an important impurity for doping carbon nanotubes (CNTs). It increases the conductivity of nanotubes, which is an important feature for field-effect transistors, emission and other nanoelectronic devices based on CNTs. In this work, we carried out a complex study of the behavior of nitrogen in nanotubes, its effect on their morphology, X-ray photoelectron spectroscopy (XPS) and Raman scattering spectra. The aim of the article is to determine the binding energies of various types of nitrogen distribution in the graphene lattice of carbon nanotubes. The goal was achieved by comparing the XPS spectra, differential gravimetric analysis, and quantum chemical calculations. It was found that a graphite-like state has the highest binding energy, which is energetically favorable during doping and creates donor centers for carbon nanotubes. Therefore, doping with nitrogen increases the conductivity of the nanotubes in most cases.
[Display omitted]
•A complex study of N behavior in MWCNTs•Manifestation of lattice distortion in Raman spectra•A new method to determine the N concentration in CNTs•Quantum-chemical calculation of the binding energy for N in N-doped CNT•Thermodynamic parameters for N-doped CNT based on joint spectroscopic analysis</description><subject>Binding energy</subject><subject>Binding energy of nitrogen within a graphene lattice</subject><subject>Carbon</subject><subject>Carbon nanotubes</subject><subject>Doping</subject><subject>Field effect transistors</subject><subject>Graphene</subject><subject>Gravimetric analysis</subject><subject>Materials Science</subject><subject>Materials Science, Coatings & Films</subject><subject>Materials Science, Multidisciplinary</subject><subject>Morphology</subject><subject>Nanoelectronics</subject><subject>Nanotechnology devices</subject><subject>Nitrogen</subject><subject>Photoelectrons</subject><subject>Physical Sciences</subject><subject>Physics</subject><subject>Physics, Applied</subject><subject>Physics, Condensed Matter</subject><subject>Quantum chemistry</subject><subject>Raman spectra</subject><subject>Science & Technology</subject><subject>Semiconductor devices</subject><subject>Spectrum analysis</subject><subject>Technology</subject><subject>X ray photoelectron spectroscopy</subject><issn>0925-9635</issn><issn>1879-0062</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>AOWDO</sourceid><recordid>eNqNkE1LxDAQhoMouH78A4UFj9J1kiZpcxIpfsGiFz2HJE0li5usSar4783SxaueZhjeZ2Z4EDrHsMCA-dVq0Tu1Dr5fECDbWQuU7KEZbhtRAXCyj2YgCKsEr9khOkppBYCJoHiGzp5cjuHN-rnzc6OiDn7ulQ951DadoINBvSd7uqvH6PXu9qV7qJbP94_dzbIydd3kqjFaCy16zYkyDChY3WOshO5bZQeiOSO21UNDlVa8tsoIRXtCKW4FL2-p-hhdTHs3MXyMNmW5CmP05aQklDPacAaspNiUMjGkFO0gN9GtVfyWGORWhFzJnQi5FSEnEYVrJ-7L6jAk46w39pcFANaIFgtaOoo7l1V2wXdh9Lmgl_9HS_p6Stvi6tPZKHdE76I1WfbB_fHqD7NuiMA</recordid><startdate>202011</startdate><enddate>202011</enddate><creator>Bulyarskiy, Sergey V.</creator><creator>Bogdanova, Daria A.</creator><creator>Gusarov, Georgy G.</creator><creator>Lakalin, Alexander V.</creator><creator>Pavlov, Alexander A.</creator><creator>Ryazanov, Roman M.</creator><general>Elsevier B.V</general><general>Elsevier</general><general>Elsevier BV</general><scope>AOWDO</scope><scope>BLEPL</scope><scope>DTL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><orcidid>https://orcid.org/0000-0001-5789-6619</orcidid><orcidid>https://orcid.org/0000-0002-9777-746X</orcidid></search><sort><creationdate>202011</creationdate><title>Nitrogen in carbon nanotubes</title><author>Bulyarskiy, Sergey V. ; Bogdanova, Daria A. ; Gusarov, Georgy G. ; Lakalin, Alexander V. ; Pavlov, Alexander A. ; Ryazanov, Roman M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-7cbb9b9db62ac5040ebd11a9bd8aef2b652e8bf74aba63eac9a4d2441896925a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Binding energy</topic><topic>Binding energy of nitrogen within a graphene lattice</topic><topic>Carbon</topic><topic>Carbon nanotubes</topic><topic>Doping</topic><topic>Field effect transistors</topic><topic>Graphene</topic><topic>Gravimetric analysis</topic><topic>Materials Science</topic><topic>Materials Science, Coatings & Films</topic><topic>Materials Science, Multidisciplinary</topic><topic>Morphology</topic><topic>Nanoelectronics</topic><topic>Nanotechnology devices</topic><topic>Nitrogen</topic><topic>Photoelectrons</topic><topic>Physical Sciences</topic><topic>Physics</topic><topic>Physics, Applied</topic><topic>Physics, Condensed Matter</topic><topic>Quantum chemistry</topic><topic>Raman spectra</topic><topic>Science & Technology</topic><topic>Semiconductor devices</topic><topic>Spectrum analysis</topic><topic>Technology</topic><topic>X ray photoelectron spectroscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bulyarskiy, Sergey V.</creatorcontrib><creatorcontrib>Bogdanova, Daria A.</creatorcontrib><creatorcontrib>Gusarov, Georgy G.</creatorcontrib><creatorcontrib>Lakalin, Alexander V.</creatorcontrib><creatorcontrib>Pavlov, Alexander A.</creatorcontrib><creatorcontrib>Ryazanov, Roman M.</creatorcontrib><collection>Web of Science - Science Citation Index Expanded - 2020</collection><collection>Web of Science Core Collection</collection><collection>Science Citation Index Expanded</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Diamond and related materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bulyarskiy, Sergey V.</au><au>Bogdanova, Daria A.</au><au>Gusarov, Georgy G.</au><au>Lakalin, Alexander V.</au><au>Pavlov, Alexander A.</au><au>Ryazanov, Roman M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Nitrogen in carbon nanotubes</atitle><jtitle>Diamond and related materials</jtitle><stitle>DIAM RELAT MATER</stitle><date>2020-11</date><risdate>2020</risdate><volume>109</volume><spage>108042</spage><pages>108042-</pages><artnum>108042</artnum><issn>0925-9635</issn><eissn>1879-0062</eissn><abstract>Nitrogen is an important impurity for doping carbon nanotubes (CNTs). It increases the conductivity of nanotubes, which is an important feature for field-effect transistors, emission and other nanoelectronic devices based on CNTs. In this work, we carried out a complex study of the behavior of nitrogen in nanotubes, its effect on their morphology, X-ray photoelectron spectroscopy (XPS) and Raman scattering spectra. The aim of the article is to determine the binding energies of various types of nitrogen distribution in the graphene lattice of carbon nanotubes. The goal was achieved by comparing the XPS spectra, differential gravimetric analysis, and quantum chemical calculations. It was found that a graphite-like state has the highest binding energy, which is energetically favorable during doping and creates donor centers for carbon nanotubes. Therefore, doping with nitrogen increases the conductivity of the nanotubes in most cases.
[Display omitted]
•A complex study of N behavior in MWCNTs•Manifestation of lattice distortion in Raman spectra•A new method to determine the N concentration in CNTs•Quantum-chemical calculation of the binding energy for N in N-doped CNT•Thermodynamic parameters for N-doped CNT based on joint spectroscopic analysis</abstract><cop>LAUSANNE</cop><pub>Elsevier B.V</pub><doi>10.1016/j.diamond.2020.108042</doi><tpages>11</tpages><orcidid>https://orcid.org/0000-0001-5789-6619</orcidid><orcidid>https://orcid.org/0000-0002-9777-746X</orcidid></addata></record> |
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| subjects | Binding energy Binding energy of nitrogen within a graphene lattice Carbon Carbon nanotubes Doping Field effect transistors Graphene Gravimetric analysis Materials Science Materials Science, Coatings & Films Materials Science, Multidisciplinary Morphology Nanoelectronics Nanotechnology devices Nitrogen Photoelectrons Physical Sciences Physics Physics, Applied Physics, Condensed Matter Quantum chemistry Raman spectra Science & Technology Semiconductor devices Spectrum analysis Technology X ray photoelectron spectroscopy |
| title | Nitrogen in carbon nanotubes |
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