Ultrahigh Doping of Graphene Using Flame-Deposited MoO3

The expected high performance of graphene-based electronics is often hindered by lack of adequate doping, which causes low carrier density and large sheet resistance. Many reported graphene doping schemes also suffer from instability or incompatibility with existing semiconductor processing. Here we...

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Veröffentlicht in:	IEEE electron device letters 2020-10, Vol.41 (10), p.1592-1595
Hauptverfasser:	Vaziri, Sam, Chen, Victoria, Cai, Lili, Jiang, Yue, Chen, Michelle E., Grady, Ryan W., Zheng, Xiaolin, Pop, Eric
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier density Chemical vapor deposition Contact resistance Doping Electron beams Engineering Engineering, Electrical & Electronic Graphene Incompatibility Molybdenum oxides Molybdenum trioxide Science & Technology Technology
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