Origin of carrier localization in AlGaN-based quantum well structures and implications for efficiency droop

We investigate carrier localization in Al-rich AlGaN/AlN quantum well (QW) structures. Low temperature time-resolved photoluminescence (PL) experiments reveal a strong variation of the carrier decay times with detection photon energy, suggesting a strong impact of carrier localization, which is foun...

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Veröffentlicht in:	Applied physics letters 2020-09, Vol.117 (10), Article 102107
Hauptverfasser:	Frankerl, Christian, Nippert, Felix, Gomez-Iglesias, Alvaro, Hoffmann, Marc Patrick, Brandl, Christian, Lugauer, Hans-Jürgen, Zeisel, Roland, Hoffmann, Axel, Davies, Matthew John
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Applied physics Augers Dependence Excitons Localization Low temperature Photoluminescence Physical Sciences Physics Physics, Applied Quantum wells Science & Technology
Online-Zugang:	Volltext
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