Energy distribution of Al2O3/diamond interface states characterized by high temperature capacitance-voltage method

In our previous work, we demonstrated the world’s first inversion-type p-channel diamond metal–oxide–semiconductor field-effect transistor (MOSFET). However, it exhibited low channel mobility due to high interface state density (Dit). In this study, the electronic states of Al2O3/diamond interfaces...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Carbon (New York) 2020-10, Vol.168, p.659-664
Hauptverfasser:	Zhang, Xufang, Matsumoto, Tsubasa, Sakurai, Ukyo, Makino, Toshiharu, Ogura, Masahiko, Yamasaki, Satoshi, Sometani, Mitsuru, Okamoto, Dai, Yano, Hiroshi, Iwamuro, Noriyuki, Inokuma, Takao, Tokuda, Norio
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Capacitance Chemistry Chemistry, Physical Density Diamond Diamonds Electric potential Electron states Energy distribution Energy levels Field effect transistors Frequency ranges High temperature Materials Science Materials Science, Multidisciplinary MOSFETs Physical Sciences Room temperature Science & Technology Semiconductor devices Semiconductors Technology Transistors Valence band Voltage
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!