Anomalous Nernst effect in ferromagnetic Mn5Ge3Cx thin films on insulating sapphire

Investigating the thermoelectric properties of ferromagnets is important for the development of future microelectronic devices for efficient energy conversion purposes. Ferromagnetic Mn 5 Ge 3 C x thin films with a Curie temperature up to T C = 450 K well above room temperature are potential candidates for spintronic applications by integration into CMOS heterostructures. In this work, the thermoelectric power, in particular, the anomalous Nernst effect (ANE), has been investigated experimentally for magnetron sputtered thin films on sapphire (11 2 ¯0) substrates. The ANE gradually increases with increasing carbon content x up to a maximum value obtained for x = 0.8 in line with the earlier investigations of the magnetization and anomalous Hall effect. The ANE is strongly enhanced by a factor three compared to the parent Mn 5 Ge 3 compound. However, for x = 0.8, we observe a clear deviation of the calculated ANE from the measured values.