Spatial defects nanoengineering for bipolar conductivity in MoS2

Understanding the atomistic origin of defects in two-dimensional transition metal dichalcogenides, their impact on the electronic properties, and how to control them is critical for future electronics and optoelectronics. Here, we demonstrate the integration of thermochemical scanning probe lithogra...

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Veröffentlicht in:	Nature communications 2020-07, Vol.11 (1), p.3463-3463, Article 3463
Hauptverfasser:	Zheng, Xiaorui, Calò, Annalisa, Cao, Tengfei, Liu, Xiangyu, Huang, Zhujun, Das, Paul Masih, Drndic, Marija, Albisetti, Edoardo, Lavini, Francesco, Li, Tai-De, Narang, Vishal, King, William P., Harrold, John W., Vittadello, Michele, Aruta, Carmela, Shahrjerdi, Davood, Riedo, Elisa
Format:	Artikel
Sprache:	eng
Schlagworte:	119/118 140/133 140/146 142/136 147/137 639/766/1130/2798 639/766/930/543 639/925/927/1007 Conductivity Defects Density functional theory Doping Electronic devices Electronic equipment Electronic properties Electronics industry Field effect transistors Humanities and Social Sciences Lithography MATERIALS SCIENCE Molybdenum disulfide Monolayers multidisciplinary Nanoengineering Optoelectronics P-n junctions Photoelectron spectroscopy Photoelectrons Scanning transmission electron microscopy Science Science (multidisciplinary) Semiconductor devices Sulfur Transition metal compounds Transmission electron microscopy
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