Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template

We report on 2.3-mu m etched-cavity GaSb-based laser diodes (LDs) epitaxially integrated on on-axis (001)Si and benchmarked against their cleaved facet counterparts. The LDs were grown in two steps. First, a GaSb-on-Si template was grown by metal-organic vapor phase epitaxy (MOVPE) before the growth...

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Veröffentlicht in:	Optics express 2020-07, Vol.28 (14), p.20785-20793
Hauptverfasser:	Monge-Bartolome, Laura, Cerba, Tiphaine, Diaz-Thomas, Daniel, Bahriz, Michael, Calvo, Marta Rio, Boissier, Guilhem, Baron, Thierry, Rodriguez, Jean-Baptiste, Cerutti, Laurent, Tournie, Eric
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed Matter Engineering Sciences Materials Science Micro and nanotechnologies Microelectronics Optics Photonic Physical Sciences Physics Science & Technology
Online-Zugang:	Volltext
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