Epitaxial mist chemical vapor deposition growth and characterization of Cu3N films on (0001)alpha-Al(2)O(3)substrates

Epitaxial growth of Cu3N films on (0001)alpha-Al(2)O(3)substrates was performed by mist chemical vapor deposition. As a source solution, 0.10 mol l(-1)of copper (II) acetylacetonate dissolved in 28% aqueous ammonia was used. Even though an aqueous solution was used as the source solution, the epitaxial Cu3N film was realized without the incorporation of CuO and Cu2O phases in the growth of 300 degrees C. The film was also found to have limited O incorporation from the results of scanning transmission electron microscopy and Rutherford back-scattering spectroscopy. The optical property of the Cu3N film was also investigated.