Material investigations for improving stability of Au free Ta/Al-based ohmic contacts annealed at low temperature for AlGaN/GaN heterostructures

Gold-free Ta/Al-based ohmic contacts fabricated by sputtering on AlGaN/GaN heterostructures and annealed at low temperature were investigated. The presence of a thin AlN spacer layer at the AlGaN/GaN heterojunction is demonstrated to prevent the ohmic contact formation as shown by rectifying behavio...

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Veröffentlicht in:	Semiconductor science and technology 2020-07, Vol.35 (7), p.75011
Hauptverfasser:	Calzolaro, Anthony, Hentschel, Rico, Edokam, Ifeanyi Francis, Sizov, Victor, Mikolajick, Thomas, Wachowiak, Andre
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN/GaN heterostructures gold-free high electron mobility transistors low-temperature annealing ohmic contacts tantalum/aluminum/tantalum tantalum/aluminum/titaniumnitride
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