Remarkable Stability Improvement of ZnO TFT with Al2O3 Gate Insulator by Yttrium Passivation with Spray Pyrolysis
We report the impact of yttrium oxide (YOx) passivation on the zinc oxide (ZnO) thin film transistor (TFT) based on Al2O3 gate insulator (GI). The YOx and ZnO films are both deposited by spray pyrolysis at 400 and 350 degrees C, respectively. The YOx passivated ZnO TFT exhibits high device performan...
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| Veröffentlicht in: | Nanomaterials (Basel, Switzerland) Switzerland), 2020-05, Vol.10 (5), p.976, Article 976 |
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| creator | Saha, Jewel Kumer Bukke, Ravindra Naik Mude, Narendra Naik Jang, Jin |
| description | We report the impact of yttrium oxide (YOx) passivation on the zinc oxide (ZnO) thin film transistor (TFT) based on Al2O3 gate insulator (GI). The YOx and ZnO films are both deposited by spray pyrolysis at 400 and 350 degrees C, respectively. The YOx passivated ZnO TFT exhibits high device performance of field effect mobility (mu(FE)) of 35.36 cm(2)/Vs, threshold voltage (V-TH) of 0.49 V and subthreshold swing (SS) of 128.4 mV/dec. The ZnO TFT also exhibits excellent device stabilities, such as negligible threshold voltage shift (V-TH) of 0.15 V under positive bias temperature stress and zero hysteresis voltage (V-H) of similar to 0 V. YOx protects the channel layer from moisture absorption. On the other hand, the unpassivated ZnO TFT with Al2O3 GI showed inferior bias stability with a high SS when compared to the passivated one. It is found by XPS that Y diffuses into the GI interface, which can reduce the interfacial defects and eliminate the hysteresis of the transfer curve. The improvement of the stability is mainly due to the diffusion of Y into ZnO as well as the ZnO/Al2O3 interface. |
| doi_str_mv | 10.3390/nano10050976 |
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The YOx and ZnO films are both deposited by spray pyrolysis at 400 and 350 degrees C, respectively. The YOx passivated ZnO TFT exhibits high device performance of field effect mobility (mu(FE)) of 35.36 cm(2)/Vs, threshold voltage (V-TH) of 0.49 V and subthreshold swing (SS) of 128.4 mV/dec. The ZnO TFT also exhibits excellent device stabilities, such as negligible threshold voltage shift (V-TH) of 0.15 V under positive bias temperature stress and zero hysteresis voltage (V-H) of similar to 0 V. YOx protects the channel layer from moisture absorption. On the other hand, the unpassivated ZnO TFT with Al2O3 GI showed inferior bias stability with a high SS when compared to the passivated one. It is found by XPS that Y diffuses into the GI interface, which can reduce the interfacial defects and eliminate the hysteresis of the transfer curve. The improvement of the stability is mainly due to the diffusion of Y into ZnO as well as the ZnO/Al2O3 interface.</description><identifier>ISSN: 2079-4991</identifier><identifier>EISSN: 2079-4991</identifier><identifier>DOI: 10.3390/nano10050976</identifier><identifier>PMID: 32438551</identifier><language>eng</language><publisher>BASEL: Mdpi</publisher><subject>Aluminum oxide ; aluminum oxide (Al2O3) ; Bias ; Chemistry ; Chemistry, Multidisciplinary ; Defects ; Glass substrates ; Hysteresis ; Materials Science ; Materials Science, Multidisciplinary ; Metal oxides ; Nanoscience & Nanotechnology ; Nitrates ; Passivity ; Physical Sciences ; Physics ; Physics, Applied ; Pyrolysis ; Scanning electron microscopy ; Science & Technology ; Science & Technology - Other Topics ; Semiconductor devices ; Spectrum analysis ; Spray pyrolysis ; Stability ; Technology ; thin film transistor ; Thin film transistors ; Thin films ; Threshold voltage ; Voltage ; Yttrium ; Yttrium oxide ; yttrium oxide (YOx) ; Zinc oxide ; Zinc oxides ; ZnO thin film</subject><ispartof>Nanomaterials (Basel, Switzerland), 2020-05, Vol.10 (5), p.976, Article 976</ispartof><rights>2020. 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The YOx and ZnO films are both deposited by spray pyrolysis at 400 and 350 degrees C, respectively. The YOx passivated ZnO TFT exhibits high device performance of field effect mobility (mu(FE)) of 35.36 cm(2)/Vs, threshold voltage (V-TH) of 0.49 V and subthreshold swing (SS) of 128.4 mV/dec. The ZnO TFT also exhibits excellent device stabilities, such as negligible threshold voltage shift (V-TH) of 0.15 V under positive bias temperature stress and zero hysteresis voltage (V-H) of similar to 0 V. YOx protects the channel layer from moisture absorption. On the other hand, the unpassivated ZnO TFT with Al2O3 GI showed inferior bias stability with a high SS when compared to the passivated one. It is found by XPS that Y diffuses into the GI interface, which can reduce the interfacial defects and eliminate the hysteresis of the transfer curve. The improvement of the stability is mainly due to the diffusion of Y into ZnO as well as the ZnO/Al2O3 interface.</description><subject>Aluminum oxide</subject><subject>aluminum oxide (Al2O3)</subject><subject>Bias</subject><subject>Chemistry</subject><subject>Chemistry, Multidisciplinary</subject><subject>Defects</subject><subject>Glass substrates</subject><subject>Hysteresis</subject><subject>Materials Science</subject><subject>Materials Science, Multidisciplinary</subject><subject>Metal oxides</subject><subject>Nanoscience & Nanotechnology</subject><subject>Nitrates</subject><subject>Passivity</subject><subject>Physical Sciences</subject><subject>Physics</subject><subject>Physics, Applied</subject><subject>Pyrolysis</subject><subject>Scanning electron microscopy</subject><subject>Science & Technology</subject><subject>Science & Technology - Other Topics</subject><subject>Semiconductor devices</subject><subject>Spectrum analysis</subject><subject>Spray 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Journals</collection><jtitle>Nanomaterials (Basel, Switzerland)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Saha, Jewel Kumer</au><au>Bukke, Ravindra Naik</au><au>Mude, Narendra Naik</au><au>Jang, Jin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Remarkable Stability Improvement of ZnO TFT with Al2O3 Gate Insulator by Yttrium Passivation with Spray Pyrolysis</atitle><jtitle>Nanomaterials (Basel, Switzerland)</jtitle><stitle>NANOMATERIALS-BASEL</stitle><date>2020-05-19</date><risdate>2020</risdate><volume>10</volume><issue>5</issue><spage>976</spage><pages>976-</pages><artnum>976</artnum><issn>2079-4991</issn><eissn>2079-4991</eissn><abstract>We report the impact of yttrium oxide (YOx) passivation on the zinc oxide (ZnO) thin film transistor (TFT) based on Al2O3 gate insulator (GI). The YOx and ZnO films are both deposited by spray pyrolysis at 400 and 350 degrees C, respectively. The YOx passivated ZnO TFT exhibits high device performance of field effect mobility (mu(FE)) of 35.36 cm(2)/Vs, threshold voltage (V-TH) of 0.49 V and subthreshold swing (SS) of 128.4 mV/dec. The ZnO TFT also exhibits excellent device stabilities, such as negligible threshold voltage shift (V-TH) of 0.15 V under positive bias temperature stress and zero hysteresis voltage (V-H) of similar to 0 V. YOx protects the channel layer from moisture absorption. On the other hand, the unpassivated ZnO TFT with Al2O3 GI showed inferior bias stability with a high SS when compared to the passivated one. It is found by XPS that Y diffuses into the GI interface, which can reduce the interfacial defects and eliminate the hysteresis of the transfer curve. The improvement of the stability is mainly due to the diffusion of Y into ZnO as well as the ZnO/Al2O3 interface.</abstract><cop>BASEL</cop><pub>Mdpi</pub><pmid>32438551</pmid><doi>10.3390/nano10050976</doi><tpages>11</tpages><orcidid>https://orcid.org/0000-0003-4842-5377</orcidid><orcidid>https://orcid.org/0000-0002-2540-4357</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Aluminum oxide aluminum oxide (Al2O3) Bias Chemistry Chemistry, Multidisciplinary Defects Glass substrates Hysteresis Materials Science Materials Science, Multidisciplinary Metal oxides Nanoscience & Nanotechnology Nitrates Passivity Physical Sciences Physics Physics, Applied Pyrolysis Scanning electron microscopy Science & Technology Science & Technology - Other Topics Semiconductor devices Spectrum analysis Spray pyrolysis Stability Technology thin film transistor Thin film transistors Thin films Threshold voltage Voltage Yttrium Yttrium oxide yttrium oxide (YOx) Zinc oxide Zinc oxides ZnO thin film |
| title | Remarkable Stability Improvement of ZnO TFT with Al2O3 Gate Insulator by Yttrium Passivation with Spray Pyrolysis |
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