Elucidation of Inhomogeneous Heterojunction Performance of Al/Cu₅FeS₄ Schottky Diode With a Gaussian Distribution of Barrier Heights

Here, we analyze inhomogeneities in the barrier height (BH) of Al/Cu₅FeS₄ Schottky device from the electrical (I-V,) measurements with a temperature range between 303 and 408 K. The temperature-dependent performance of our fabricated device is analyzed by using the thermionic emission (TE) theory. S...

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Veröffentlicht in:	IEEE transactions on electron devices 2020-05, Vol.67 (5), p.1-6
Hauptverfasser:	Sil, Sayantan, Jana, Rajkumar, Biswas, Animesh, Das, Dhananjoy, Dey, Arka, Datta, Joydeep, Sanyal, Dirtha, Ray, Partha Pratim
Format:	Artikel
Sprache:	eng
Schlagworte:	Al/Cu₅FeS₄ Schottky diode barrier inhomogeneities Current voltage characteristics Emission analysis Gaussian distribution Gaussian distribution (GD) Heterojunctions I-V characteristics Inhomogeneity Iron Mathematical analysis Nonhomogeneous media Normal distribution Resistance Richardson constant Schottky diodes Standard deviation Temperature dependence Temperature distribution Temperature measurement Thermionic emission
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