A 1 V 25 to 30 GHz three‐stage linear CMOS power amplifier using driver stage RF predistortion technique
This article presents a three‐stage 25 to 30 GHz linear CMOS power amplifier (PA) for fifth‐generation (5G) applications. In order to improve the linearity by compensating AM‐AM/AM‐PM distortion, we propose a driver stage RF predistortion technique in which a first drive amplifier (DA) operates in c...
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| Veröffentlicht in: | Microwave and optical technology letters 2020-10, Vol.62 (10), p.3112-3118 |
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| container_end_page | 3118 |
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| container_issue | 10 |
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| container_title | Microwave and optical technology letters |
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| creator | Choi, Sunkyu Kim, Hyeon‐June Lee, Eun‐Gyu Choi, Han‐Woong Lim, Jeong‐Taek Kim, Choul‐Young |
| description | This article presents a three‐stage 25 to 30 GHz linear CMOS power amplifier (PA) for fifth‐generation (5G) applications. In order to improve the linearity by compensating AM‐AM/AM‐PM distortion, we propose a driver stage RF predistortion technique in which a first drive amplifier (DA) operates in class C mode and a second DA operates in class A mode. By enhancing the linearity with the technique, the PA can be operated at more deep class‐AB bias condition with less back‐off. As a result, the efficiency of the PA at operating output power can thus be increased. The PA with the predistortion technique is designed and fabricated in bulk 65 nm 1 V CMOS process. The linear PA achieves 16.9 dBm Psat with 34.5% power‐added efficiency (PAE) and 15.9 dBm P1dB with 32% PAE at 27 GHz. At an average power of 9.3 dBm, the PA achieves the EVM of −25 dBc and PAE of 11.4% at 27 GHz. |
| doi_str_mv | 10.1002/mop.32419 |
| format | Article |
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In order to improve the linearity by compensating AM‐AM/AM‐PM distortion, we propose a driver stage RF predistortion technique in which a first drive amplifier (DA) operates in class C mode and a second DA operates in class A mode. By enhancing the linearity with the technique, the PA can be operated at more deep class‐AB bias condition with less back‐off. As a result, the efficiency of the PA at operating output power can thus be increased. The PA with the predistortion technique is designed and fabricated in bulk 65 nm 1 V CMOS process. The linear PA achieves 16.9 dBm Psat with 34.5% power‐added efficiency (PAE) and 15.9 dBm P1dB with 32% PAE at 27 GHz. 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In order to improve the linearity by compensating AM‐AM/AM‐PM distortion, we propose a driver stage RF predistortion technique in which a first drive amplifier (DA) operates in class C mode and a second DA operates in class A mode. By enhancing the linearity with the technique, the PA can be operated at more deep class‐AB bias condition with less back‐off. As a result, the efficiency of the PA at operating output power can thus be increased. The PA with the predistortion technique is designed and fabricated in bulk 65 nm 1 V CMOS process. The linear PA achieves 16.9 dBm Psat with 34.5% power‐added efficiency (PAE) and 15.9 dBm P1dB with 32% PAE at 27 GHz. 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| subjects | AM‐AM AM‐PM CMOS Engineering Engineering, Electrical & Electronic Linearity Optics Physical Sciences power amplifier Power amplifiers RF predistortion Science & Technology Technology |
| title | A 1 V 25 to 30 GHz three‐stage linear CMOS power amplifier using driver stage RF predistortion technique |
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