Stress-induced change of Cu-doped Bi2Te3 thin films for flexible thermoelectric applications
[Display omitted] •Cu-doped Bi2Te3 thin films were deposited by magnetron sputtering.•The substrates were used with the Si wafer, glass, and polyimide.•The characteristics of films were different with each other.•The influence of thermal stress in Cu-doped Bi2Te3 thin films was investigated. Cu-dope...
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| Veröffentlicht in: | Materials letters 2020-07, Vol.270, p.127697, Article 127697 |
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| container_title | Materials letters |
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| creator | Geun Kim, Byeong Hyun Bae, Sang Byeon, Jihyeon Lee, Chun Choi, Soon-Mok |
| description | [Display omitted]
•Cu-doped Bi2Te3 thin films were deposited by magnetron sputtering.•The substrates were used with the Si wafer, glass, and polyimide.•The characteristics of films were different with each other.•The influence of thermal stress in Cu-doped Bi2Te3 thin films was investigated.
Cu-doped Bi2Te3 thin films were deposited on Si wafer, glass, and polyimide substrates at 200 °C using magnetron sputtering. During the deposition process, it is confirmed that thermal stress occurred at the films due to the mismatch of the coefficient of thermal expansion between the films and the substrates. As substrates with different coefficients of thermal expansion were used, the changes of crystal growth, morphologies, and thermoelectric properties of the Cu-doped Bi2Te3 thin films were investigated. |
| doi_str_mv | 10.1016/j.matlet.2020.127697 |
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•Cu-doped Bi2Te3 thin films were deposited by magnetron sputtering.•The substrates were used with the Si wafer, glass, and polyimide.•The characteristics of films were different with each other.•The influence of thermal stress in Cu-doped Bi2Te3 thin films was investigated.
Cu-doped Bi2Te3 thin films were deposited on Si wafer, glass, and polyimide substrates at 200 °C using magnetron sputtering. During the deposition process, it is confirmed that thermal stress occurred at the films due to the mismatch of the coefficient of thermal expansion between the films and the substrates. As substrates with different coefficients of thermal expansion were used, the changes of crystal growth, morphologies, and thermoelectric properties of the Cu-doped Bi2Te3 thin films were investigated.</description><identifier>ISSN: 0167-577X</identifier><identifier>EISSN: 1873-4979</identifier><identifier>DOI: 10.1016/j.matlet.2020.127697</identifier><language>eng</language><publisher>AMSTERDAM: Elsevier B.V</publisher><subject>Bi2Te3 ; Bismuth tellurides ; Crystal growth ; Flexible ; Glass substrates ; Magnetron sputtering ; Materials Science ; Materials Science, Multidisciplinary ; Morphology ; Physical Sciences ; Physics ; Physics, Applied ; Polyimide ; Science & Technology ; Sputtering ; Substrates ; Technology ; Thermal expansion ; Thermal stress ; Thermoelectric ; Thermoelectricity ; Thin films</subject><ispartof>Materials letters, 2020-07, Vol.270, p.127697, Article 127697</ispartof><rights>2020 Elsevier B.V.</rights><rights>Copyright Elsevier BV Jul 1, 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>true</woscitedreferencessubscribed><woscitedreferencescount>16</woscitedreferencescount><woscitedreferencesoriginalsourcerecordid>wos000529939800018</woscitedreferencesoriginalsourcerecordid><citedby>FETCH-LOGICAL-c334t-8f9e88fafe8681c4583179e6358d700b9e149c5b07bbccb6a81d81d18f3d6e203</citedby><cites>FETCH-LOGICAL-c334t-8f9e88fafe8681c4583179e6358d700b9e149c5b07bbccb6a81d81d18f3d6e203</cites><orcidid>0000-0002-7014-6481</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.matlet.2020.127697$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>315,782,786,3552,27931,27932,28255,46002</link.rule.ids></links><search><creatorcontrib>Geun Kim, Byeong</creatorcontrib><creatorcontrib>Hyun Bae, Sang</creatorcontrib><creatorcontrib>Byeon, Jihyeon</creatorcontrib><creatorcontrib>Lee, Chun</creatorcontrib><creatorcontrib>Choi, Soon-Mok</creatorcontrib><title>Stress-induced change of Cu-doped Bi2Te3 thin films for flexible thermoelectric applications</title><title>Materials letters</title><addtitle>MATER LETT</addtitle><description>[Display omitted]
•Cu-doped Bi2Te3 thin films were deposited by magnetron sputtering.•The substrates were used with the Si wafer, glass, and polyimide.•The characteristics of films were different with each other.•The influence of thermal stress in Cu-doped Bi2Te3 thin films was investigated.
Cu-doped Bi2Te3 thin films were deposited on Si wafer, glass, and polyimide substrates at 200 °C using magnetron sputtering. During the deposition process, it is confirmed that thermal stress occurred at the films due to the mismatch of the coefficient of thermal expansion between the films and the substrates. As substrates with different coefficients of thermal expansion were used, the changes of crystal growth, morphologies, and thermoelectric properties of the Cu-doped Bi2Te3 thin films were investigated.</description><subject>Bi2Te3</subject><subject>Bismuth tellurides</subject><subject>Crystal growth</subject><subject>Flexible</subject><subject>Glass substrates</subject><subject>Magnetron sputtering</subject><subject>Materials Science</subject><subject>Materials Science, Multidisciplinary</subject><subject>Morphology</subject><subject>Physical Sciences</subject><subject>Physics</subject><subject>Physics, Applied</subject><subject>Polyimide</subject><subject>Science & Technology</subject><subject>Sputtering</subject><subject>Substrates</subject><subject>Technology</subject><subject>Thermal expansion</subject><subject>Thermal stress</subject><subject>Thermoelectric</subject><subject>Thermoelectricity</subject><subject>Thin films</subject><issn>0167-577X</issn><issn>1873-4979</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>AOWDO</sourceid><recordid>eNqNkE9L5DAYh4MoOKt-Aw-FPUrHpEmb5LKgZf0DggcVPAihTd9ohk5Tk1TXb29mKh4XIZDw4_fkTR6EjgleEkyq09Vy3cQe4rLARYoKXkm-gxZEcJozyeUuWqQaz0vOH_fRrxBWGGMmMVugp7voIYTcDt2kocv0SzM8Q-ZMVk9558YUndviHmgWX-yQGduvQ2acz0wP_2zbQ8rBrx30oKO3OmvGsbe6idYN4RDtmaYPcPS1H6CHi7_39VV-c3t5XZ_d5JpSFnNhJAhhGgOiEkSzUlDCJVS0FB3HuJVAmNRli3nbat1WjSBdWkQY2lVQYHqAfs_3jt69ThCiWrnJD2mkKhjb_rSsUovNLe1dCB6MGr1dN_5DEaw2HtVKzR7VxqOaPSbsZMbeoXUmaAuDhm80iSwLKakU6UREaouft2sbt6JqNw0xoX9mFJKqNwtefeGd9Umu6pz9_0s_AbXenq8</recordid><startdate>20200701</startdate><enddate>20200701</enddate><creator>Geun Kim, Byeong</creator><creator>Hyun Bae, Sang</creator><creator>Byeon, Jihyeon</creator><creator>Lee, Chun</creator><creator>Choi, Soon-Mok</creator><general>Elsevier B.V</general><general>Elsevier</general><general>Elsevier BV</general><scope>AOWDO</scope><scope>BLEPL</scope><scope>DTL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><orcidid>https://orcid.org/0000-0002-7014-6481</orcidid></search><sort><creationdate>20200701</creationdate><title>Stress-induced change of Cu-doped Bi2Te3 thin films for flexible thermoelectric applications</title><author>Geun Kim, Byeong ; Hyun Bae, Sang ; Byeon, Jihyeon ; Lee, Chun ; Choi, Soon-Mok</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c334t-8f9e88fafe8681c4583179e6358d700b9e149c5b07bbccb6a81d81d18f3d6e203</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Bi2Te3</topic><topic>Bismuth tellurides</topic><topic>Crystal growth</topic><topic>Flexible</topic><topic>Glass substrates</topic><topic>Magnetron sputtering</topic><topic>Materials Science</topic><topic>Materials Science, Multidisciplinary</topic><topic>Morphology</topic><topic>Physical Sciences</topic><topic>Physics</topic><topic>Physics, Applied</topic><topic>Polyimide</topic><topic>Science & Technology</topic><topic>Sputtering</topic><topic>Substrates</topic><topic>Technology</topic><topic>Thermal expansion</topic><topic>Thermal stress</topic><topic>Thermoelectric</topic><topic>Thermoelectricity</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Geun Kim, Byeong</creatorcontrib><creatorcontrib>Hyun Bae, Sang</creatorcontrib><creatorcontrib>Byeon, Jihyeon</creatorcontrib><creatorcontrib>Lee, Chun</creatorcontrib><creatorcontrib>Choi, Soon-Mok</creatorcontrib><collection>Web of Science - Science Citation Index Expanded - 2020</collection><collection>Web of Science Core Collection</collection><collection>Science Citation Index Expanded</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Geun Kim, Byeong</au><au>Hyun Bae, Sang</au><au>Byeon, Jihyeon</au><au>Lee, Chun</au><au>Choi, Soon-Mok</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Stress-induced change of Cu-doped Bi2Te3 thin films for flexible thermoelectric applications</atitle><jtitle>Materials letters</jtitle><stitle>MATER LETT</stitle><date>2020-07-01</date><risdate>2020</risdate><volume>270</volume><spage>127697</spage><pages>127697-</pages><artnum>127697</artnum><issn>0167-577X</issn><eissn>1873-4979</eissn><abstract>[Display omitted]
•Cu-doped Bi2Te3 thin films were deposited by magnetron sputtering.•The substrates were used with the Si wafer, glass, and polyimide.•The characteristics of films were different with each other.•The influence of thermal stress in Cu-doped Bi2Te3 thin films was investigated.
Cu-doped Bi2Te3 thin films were deposited on Si wafer, glass, and polyimide substrates at 200 °C using magnetron sputtering. During the deposition process, it is confirmed that thermal stress occurred at the films due to the mismatch of the coefficient of thermal expansion between the films and the substrates. As substrates with different coefficients of thermal expansion were used, the changes of crystal growth, morphologies, and thermoelectric properties of the Cu-doped Bi2Te3 thin films were investigated.</abstract><cop>AMSTERDAM</cop><pub>Elsevier B.V</pub><doi>10.1016/j.matlet.2020.127697</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-7014-6481</orcidid></addata></record> |
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| subjects | Bi2Te3 Bismuth tellurides Crystal growth Flexible Glass substrates Magnetron sputtering Materials Science Materials Science, Multidisciplinary Morphology Physical Sciences Physics Physics, Applied Polyimide Science & Technology Sputtering Substrates Technology Thermal expansion Thermal stress Thermoelectric Thermoelectricity Thin films |
| title | Stress-induced change of Cu-doped Bi2Te3 thin films for flexible thermoelectric applications |
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