Structure, magnetic and electronic transport properties in antiperovskite cubic γ′-CuFe3N polycrystalline films

The structure, magnetic and electronic transport properties of the facing-target reactively sputtered polycrystalline CuFe3N films have been investigated systematically. The CuFe3N film has a cubic antiperovskite structure. The saturation magnetization satisfied the modified Bloch's spin wave t...

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Veröffentlicht in:	Intermetallics 2020-06, Vol.121, p.106779, Article 106779
Hauptverfasser:	Shi, Xiaohui, Li, Xujing, Lai, Zhengxun, Liu, Xiang, Mi, Wenbo
Format:	Artikel
Sprache:	eng
Schlagworte:	Anomalous Hall effect Chemistry Chemistry, Physical Competition Conduction electrons CuFe3N Electron spin Electron transport Hall effect Iron nitride Lorentz force Magnetic properties Magnetic saturation Magnetization Magnetoresistance Magnetoresistivity Magnons Materials Science Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Physical Sciences Planar Hall effect Polycrystals Scattering Science & Technology Spin-orbit interactions Symmetry-transformation behavior Technology Temperature dependence Thick films Transport properties
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Zusammenfassung:	The structure, magnetic and electronic transport properties of the facing-target reactively sputtered polycrystalline CuFe3N films have been investigated systematically. The CuFe3N film has a cubic antiperovskite structure. The saturation magnetization satisfied the modified Bloch's spin wave theory. At 300 K, the saturation magnetization of the 80 nm-thick CuFe3N films is 402 emu/cm3, which is smaller than 800 emu/cm3 of the 80 nm-thick polycrystalline Fe4N films. The CuFe3N films are metallic. The anomalous Hall effect in the “dirty region” of σxx
ISSN:	0966-9795 1879-0216
DOI:	10.1016/j.intermet.2020.106779