Effects of Post-annealing and Co Interlayer Between SiNx and Cu on the Interfacial Adhesion Energy for Advanced Cu Interconnections
Effects of Co interlayer and 200 °C post-annealing treatment on interfacial adhesion energy of SiN x /Cu structure were systematically investigated. Initial interfacial adhesion energy of SiN x /Cu structure measured by double cantilever beam test was 0.92 J/m 2 . The interfacial adhesion energy inc...
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| Veröffentlicht in: | Electronic materials letters 2020, 16(4), , pp.311-320 |
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| creator | Lee, Hyeonchul Jeong, Minsu Kim, Gahui Son, Kirak Seo, Jeongmin Kim, Taek-Soo Park, Young-Bae |
| description | Effects of Co interlayer and 200 °C post-annealing treatment on interfacial adhesion energy of SiN
x
/Cu structure were systematically investigated. Initial interfacial adhesion energy of SiN
x
/Cu structure measured by double cantilever beam test was 0.92 J/m
2
. The interfacial adhesion energy increased to 2.94 J/m
2
with Co interlayer between SiN
x
and Cu films. After post-annealing treatment at 200 °C for 500 h, the interfacial adhesion energy of SiN
x
/Co/Cu structure decreased to 0.95 J/m
2
. X-ray photoelectron spectroscopy analysis revealed that the interfacial adhesion energy increased for SiN
x
/Co/Cu thin films due to CoSi
2
reaction layer at SiN
x
/Co interface, but sharply decreased during post-annealing treatment by SiO
2
formation at SiN
x
/Co interface.
Graphic abstract |
| doi_str_mv | 10.1007/s13391-020-00210-7 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_webof</sourceid><recordid>TN_cdi_webofscience_primary_000524624600001</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2414770568</sourcerecordid><originalsourceid>FETCH-LOGICAL-c353t-41c02d91cb77c68526273346c10789df2617c779e65f6c7c32652e7f0897eaf33</originalsourceid><addsrcrecordid>eNqNkV2LUzEQhoMoWOr-Aa8CXolE83FOPi7roWphUdH1OmTTSTe7NVmT1LXX_nGzPaJ3IgQmZJ53ZjIvQk8ZfckoVa8qE8IwQjkllHJGiXqAFpwaQaTS-iFaMCU00dTQx-is1mvaKcFGKcQC_VyHAL5VnAP-mGsjLiVw-5h22KUtnjLepAZl745Q8GtodwAJf47vf8zpA84JtyuYqeB8dHu82l5BjT2xTlB2Rxxy6W_fXfJwkpxYn3sj3zpWn6BHwe0rnP2OS_TlzfpiekfOP7zdTKtz4sUoGhmYp3xrmL9Uyks9csmVEIP0jCpttoFLprxSBuQYpFdecDlyUIFqo8AFIZbo-Vw3lWBvfLTZxVPcZXtT7OrTxcaaYeCmt1uiZzN7W_K3A9Rmr_OhpD6e5QMblKKj1J3iM-VLrrVAsLclfnXlaBm1997Y2RvbvbEnb6zqohez6A4uc6g-Ql_MH2E3Z-SD7KffKOu0_n96is3dr3TKh9S6VMzS2vG0g_L3D_8Y7xdRALBf</addsrcrecordid><sourcetype>Open Website</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2414770568</pqid></control><display><type>article</type><title>Effects of Post-annealing and Co Interlayer Between SiNx and Cu on the Interfacial Adhesion Energy for Advanced Cu Interconnections</title><source>SpringerNature Journals</source><source>Web of Science - Science Citation Index Expanded - 2020<img src="https://exlibris-pub.s3.amazonaws.com/fromwos-v2.jpg" /></source><creator>Lee, Hyeonchul ; Jeong, Minsu ; Kim, Gahui ; Son, Kirak ; Seo, Jeongmin ; Kim, Taek-Soo ; Park, Young-Bae</creator><creatorcontrib>Lee, Hyeonchul ; Jeong, Minsu ; Kim, Gahui ; Son, Kirak ; Seo, Jeongmin ; Kim, Taek-Soo ; Park, Young-Bae</creatorcontrib><description>Effects of Co interlayer and 200 °C post-annealing treatment on interfacial adhesion energy of SiN
x
/Cu structure were systematically investigated. Initial interfacial adhesion energy of SiN
x
/Cu structure measured by double cantilever beam test was 0.92 J/m
2
. The interfacial adhesion energy increased to 2.94 J/m
2
with Co interlayer between SiN
x
and Cu films. After post-annealing treatment at 200 °C for 500 h, the interfacial adhesion energy of SiN
x
/Co/Cu structure decreased to 0.95 J/m
2
. X-ray photoelectron spectroscopy analysis revealed that the interfacial adhesion energy increased for SiN
x
/Co/Cu thin films due to CoSi
2
reaction layer at SiN
x
/Co interface, but sharply decreased during post-annealing treatment by SiO
2
formation at SiN
x
/Co interface.
Graphic abstract</description><identifier>ISSN: 1738-8090</identifier><identifier>EISSN: 2093-6788</identifier><identifier>DOI: 10.1007/s13391-020-00210-7</identifier><language>eng</language><publisher>Seoul: The Korean Institute of Metals and Materials</publisher><subject>Adhesion ; Annealing ; Cantilever beams ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Cobalt silicide ; Comparative studies ; Condensed Matter Physics ; Energy ; Interlayers ; Magnetics and Photonics ; Materials Science ; Materials Science, Multidisciplinary ; Nanotechnology ; Nanotechnology and Microengineering ; Optical and Electronic Materials ; Original Article - Electronics ; Pallets ; Photoelectrons ; Science & Technology ; Silicon dioxide ; Technology ; Thin films ; 전자/정보통신공학</subject><ispartof>Electronic Materials Letters, 2020, 16(4), , pp.311-320</ispartof><rights>The Korean Institute of Metals and Materials 2020</rights><rights>The Korean Institute of Metals and Materials 2020.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>true</woscitedreferencessubscribed><woscitedreferencescount>2</woscitedreferencescount><woscitedreferencesoriginalsourcerecordid>wos000524624600001</woscitedreferencesoriginalsourcerecordid><citedby>FETCH-LOGICAL-c353t-41c02d91cb77c68526273346c10789df2617c779e65f6c7c32652e7f0897eaf33</citedby><cites>FETCH-LOGICAL-c353t-41c02d91cb77c68526273346c10789df2617c779e65f6c7c32652e7f0897eaf33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s13391-020-00210-7$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s13391-020-00210-7$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>315,781,785,27929,27930,28253,41493,42562,51324</link.rule.ids><backlink>$$Uhttps://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART002594722$$DAccess content in National Research Foundation of Korea (NRF)$$Hfree_for_read</backlink></links><search><creatorcontrib>Lee, Hyeonchul</creatorcontrib><creatorcontrib>Jeong, Minsu</creatorcontrib><creatorcontrib>Kim, Gahui</creatorcontrib><creatorcontrib>Son, Kirak</creatorcontrib><creatorcontrib>Seo, Jeongmin</creatorcontrib><creatorcontrib>Kim, Taek-Soo</creatorcontrib><creatorcontrib>Park, Young-Bae</creatorcontrib><title>Effects of Post-annealing and Co Interlayer Between SiNx and Cu on the Interfacial Adhesion Energy for Advanced Cu Interconnections</title><title>Electronic materials letters</title><addtitle>Electron. Mater. Lett</addtitle><addtitle>ELECTRON MATER LETT</addtitle><description>Effects of Co interlayer and 200 °C post-annealing treatment on interfacial adhesion energy of SiN
x
/Cu structure were systematically investigated. Initial interfacial adhesion energy of SiN
x
/Cu structure measured by double cantilever beam test was 0.92 J/m
2
. The interfacial adhesion energy increased to 2.94 J/m
2
with Co interlayer between SiN
x
and Cu films. After post-annealing treatment at 200 °C for 500 h, the interfacial adhesion energy of SiN
x
/Co/Cu structure decreased to 0.95 J/m
2
. X-ray photoelectron spectroscopy analysis revealed that the interfacial adhesion energy increased for SiN
x
/Co/Cu thin films due to CoSi
2
reaction layer at SiN
x
/Co interface, but sharply decreased during post-annealing treatment by SiO
2
formation at SiN
x
/Co interface.
Graphic abstract</description><subject>Adhesion</subject><subject>Annealing</subject><subject>Cantilever beams</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Cobalt silicide</subject><subject>Comparative studies</subject><subject>Condensed Matter Physics</subject><subject>Energy</subject><subject>Interlayers</subject><subject>Magnetics and Photonics</subject><subject>Materials Science</subject><subject>Materials Science, Multidisciplinary</subject><subject>Nanotechnology</subject><subject>Nanotechnology and Microengineering</subject><subject>Optical and Electronic Materials</subject><subject>Original Article - Electronics</subject><subject>Pallets</subject><subject>Photoelectrons</subject><subject>Science & Technology</subject><subject>Silicon dioxide</subject><subject>Technology</subject><subject>Thin films</subject><subject>전자/정보통신공학</subject><issn>1738-8090</issn><issn>2093-6788</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>AOWDO</sourceid><recordid>eNqNkV2LUzEQhoMoWOr-Aa8CXolE83FOPi7roWphUdH1OmTTSTe7NVmT1LXX_nGzPaJ3IgQmZJ53ZjIvQk8ZfckoVa8qE8IwQjkllHJGiXqAFpwaQaTS-iFaMCU00dTQx-is1mvaKcFGKcQC_VyHAL5VnAP-mGsjLiVw-5h22KUtnjLepAZl745Q8GtodwAJf47vf8zpA84JtyuYqeB8dHu82l5BjT2xTlB2Rxxy6W_fXfJwkpxYn3sj3zpWn6BHwe0rnP2OS_TlzfpiekfOP7zdTKtz4sUoGhmYp3xrmL9Uyks9csmVEIP0jCpttoFLprxSBuQYpFdecDlyUIFqo8AFIZbo-Vw3lWBvfLTZxVPcZXtT7OrTxcaaYeCmt1uiZzN7W_K3A9Rmr_OhpD6e5QMblKKj1J3iM-VLrrVAsLclfnXlaBm1997Y2RvbvbEnb6zqohez6A4uc6g-Ql_MH2E3Z-SD7KffKOu0_n96is3dr3TKh9S6VMzS2vG0g_L3D_8Y7xdRALBf</recordid><startdate>20200701</startdate><enddate>20200701</enddate><creator>Lee, Hyeonchul</creator><creator>Jeong, Minsu</creator><creator>Kim, Gahui</creator><creator>Son, Kirak</creator><creator>Seo, Jeongmin</creator><creator>Kim, Taek-Soo</creator><creator>Park, Young-Bae</creator><general>The Korean Institute of Metals and Materials</general><general>Korean Inst Metals Materials</general><general>Springer Nature B.V</general><general>대한금속·재료학회</general><scope>AOWDO</scope><scope>BLEPL</scope><scope>DTL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>ACYCR</scope></search><sort><creationdate>20200701</creationdate><title>Effects of Post-annealing and Co Interlayer Between SiNx and Cu on the Interfacial Adhesion Energy for Advanced Cu Interconnections</title><author>Lee, Hyeonchul ; Jeong, Minsu ; Kim, Gahui ; Son, Kirak ; Seo, Jeongmin ; Kim, Taek-Soo ; Park, Young-Bae</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c353t-41c02d91cb77c68526273346c10789df2617c779e65f6c7c32652e7f0897eaf33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Adhesion</topic><topic>Annealing</topic><topic>Cantilever beams</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Cobalt silicide</topic><topic>Comparative studies</topic><topic>Condensed Matter Physics</topic><topic>Energy</topic><topic>Interlayers</topic><topic>Magnetics and Photonics</topic><topic>Materials Science</topic><topic>Materials Science, Multidisciplinary</topic><topic>Nanotechnology</topic><topic>Nanotechnology and Microengineering</topic><topic>Optical and Electronic Materials</topic><topic>Original Article - Electronics</topic><topic>Pallets</topic><topic>Photoelectrons</topic><topic>Science & Technology</topic><topic>Silicon dioxide</topic><topic>Technology</topic><topic>Thin films</topic><topic>전자/정보통신공학</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Hyeonchul</creatorcontrib><creatorcontrib>Jeong, Minsu</creatorcontrib><creatorcontrib>Kim, Gahui</creatorcontrib><creatorcontrib>Son, Kirak</creatorcontrib><creatorcontrib>Seo, Jeongmin</creatorcontrib><creatorcontrib>Kim, Taek-Soo</creatorcontrib><creatorcontrib>Park, Young-Bae</creatorcontrib><collection>Web of Science - Science Citation Index Expanded - 2020</collection><collection>Web of Science Core Collection</collection><collection>Science Citation Index Expanded</collection><collection>CrossRef</collection><collection>Korean Citation Index</collection><jtitle>Electronic materials letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, Hyeonchul</au><au>Jeong, Minsu</au><au>Kim, Gahui</au><au>Son, Kirak</au><au>Seo, Jeongmin</au><au>Kim, Taek-Soo</au><au>Park, Young-Bae</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of Post-annealing and Co Interlayer Between SiNx and Cu on the Interfacial Adhesion Energy for Advanced Cu Interconnections</atitle><jtitle>Electronic materials letters</jtitle><stitle>Electron. Mater. Lett</stitle><stitle>ELECTRON MATER LETT</stitle><date>2020-07-01</date><risdate>2020</risdate><volume>16</volume><issue>4</issue><spage>311</spage><epage>320</epage><pages>311-320</pages><issn>1738-8090</issn><eissn>2093-6788</eissn><abstract>Effects of Co interlayer and 200 °C post-annealing treatment on interfacial adhesion energy of SiN
x
/Cu structure were systematically investigated. Initial interfacial adhesion energy of SiN
x
/Cu structure measured by double cantilever beam test was 0.92 J/m
2
. The interfacial adhesion energy increased to 2.94 J/m
2
with Co interlayer between SiN
x
and Cu films. After post-annealing treatment at 200 °C for 500 h, the interfacial adhesion energy of SiN
x
/Co/Cu structure decreased to 0.95 J/m
2
. X-ray photoelectron spectroscopy analysis revealed that the interfacial adhesion energy increased for SiN
x
/Co/Cu thin films due to CoSi
2
reaction layer at SiN
x
/Co interface, but sharply decreased during post-annealing treatment by SiO
2
formation at SiN
x
/Co interface.
Graphic abstract</abstract><cop>Seoul</cop><pub>The Korean Institute of Metals and Materials</pub><doi>10.1007/s13391-020-00210-7</doi><tpages>10</tpages></addata></record> |
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| source | SpringerNature Journals; Web of Science - Science Citation Index Expanded - 2020<img src="https://exlibris-pub.s3.amazonaws.com/fromwos-v2.jpg" /> |
| subjects | Adhesion Annealing Cantilever beams Characterization and Evaluation of Materials Chemistry and Materials Science Cobalt silicide Comparative studies Condensed Matter Physics Energy Interlayers Magnetics and Photonics Materials Science Materials Science, Multidisciplinary Nanotechnology Nanotechnology and Microengineering Optical and Electronic Materials Original Article - Electronics Pallets Photoelectrons Science & Technology Silicon dioxide Technology Thin films 전자/정보통신공학 |
| title | Effects of Post-annealing and Co Interlayer Between SiNx and Cu on the Interfacial Adhesion Energy for Advanced Cu Interconnections |
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