SiC quantum dot formation in SiO2 layer using double hot-Si+/C+-ion implantation technique

We experimentally studied the material structure and photoluminescence (PL) properties of SiC quantum-dots (QD) in SiO2 layer (Si+/C+OX) fabricated by double hot-Si+/C+ ion implantation into SiO2 and the post N-2 annealing, comparing with those of SiC-dots by single hot-C+ ion implanted oxide (C+-OX) and crystal-Si layers (C+-Si). X-ray photoemission spectroscopy for Si+/C+-OX confirmed SiC bonds even in SiO2, which is the direct verification of SiC formation in SiO2. Moreover, transmission electron microscope analyzes showed that 2 nm diameter SiC-dots with a clear lattice spots were successfully formed in Si+/C+-OX. After N-2 annealing, we demonstrated strong PL emission from Si+/C+OX, and the PL intensity I-PL of Si+/C+-OX is approximately 2.6 and 12 times larger than those of C+Si and C+OX, respectively. The stronger I-PL of Si+/C+-OX is possibly attributable to QD-induced PL-efficiency enhancement in Si+/C+-OX. Moreover, PL photon energy at the peak I-PL of Si+/C+-OX rapidly increases to approximately 2.4 eV after N-2 annealing. (C) 2020 The Japan Society of Applied Physics