Exploiting double jumping phenomenon for broadening bandwidth of an energy harvesting device
•A double jump phenomenon appears in the frequency domain near internal resonances.•The nonlinear behavior is successfully exploited for increasing operating bandwidth.•Deliverable average power is enough for a vast range of sensor-based applications.•Compactness of the design permits incorporation...
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Veröffentlicht in: | Mechanical systems and signal processing 2020-05, Vol.139, p.106614, Article 106614 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | •A double jump phenomenon appears in the frequency domain near internal resonances.•The nonlinear behavior is successfully exploited for increasing operating bandwidth.•Deliverable average power is enough for a vast range of sensor-based applications.•Compactness of the design permits incorporation inside vibrational structures.
The steady state response of a particular harvesting system is investigated under the condition of external and internal resonance, with emphasis on the double jump phenomenon. Following the trend of recent researches on exploring nonlinearity aspects for broadening the frequency resonance bandwidth, the problem of effective energy harvesting from a broadband source is dealt with. The proposed harvester can be embedded within vibrational structures and can dually act as a vibration absorber. The governing non-linear partial differential equations are truncated into a set of perturbed equations via Galerkin method. The method of multiple scales is applied to derive the modulated amplitude versus frequency at the vicinity of flapwise and chordwise primary resonances, as well as around other internal resonance frequencies. The amplitude-frequency response plot reveals resonance peaks bending to the left and right, i.e., splitting into two different tongues in contrast to conventional jumps which lean only toward higher or lower frequency directions. Numerical results demonstrate that this internal resonance-based harvesting design can produce sufficient power for the consumption of typical MEMS devices. |
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ISSN: | 0888-3270 1096-1216 |
DOI: | 10.1016/j.ymssp.2019.106614 |