Investigation of the synaptic device based on the resistive switching behavior in hafnium oxide

Metal-oxide based electronics synapse is promising for future neuromorphic computation application due to its simple structure and fabfriendly materials. Hf Oxresistive switching memory has been demonstrated superior performance such as high speed, low voltage, robust reliability, excellent repeatab...

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Veröffentlicht in:	Progress in natural science 2015-02, Vol.25 (1), p.47-50
Hauptverfasser:	Gao, Bin, Liu, Lifeng, Kang, Jinfeng
Format:	Artikel
Sprache:	eng
Schlagworte:	cell(MLC) Hafnium Hafnium oxide (HfOx) Memristor Multilevel Multilevel cell (MLC) oxide(HfOx) Resistive Resistive switching switching Synapse
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