Science Letters： A robust polysilicon-assisted SCR in ESD protection application

A novel polysilicon-assisted silicon-controlled rectifier （SCR） is presented and analyzed in this paper, which is fabricated in HHNEC＇s 0.18μm EEPROM process. The polysilicon-assisted SCRs take advantage of polysilicon layer to help bypass electro-static discharge （E S D） current without occupying e...

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Veröffentlicht in:	Journal of Zhejiang University. A. Science 2007, Vol.8 (12), p.1879-1883
1. Verfasser:	CUI Qiang HAN Yan DONG Shu-rong LIOU Juin-jie
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Sprache:	eng
Schlagworte:	保护程序多晶硅微电子学电子元件
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container_title	Journal of Zhejiang University. A. Science
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creator	CUI Qiang HAN Yan DONG Shu-rong LIOU Juin-jie
description	A novel polysilicon-assisted silicon-controlled rectifier （SCR） is presented and analyzed in this paper, which is fabricated in HHNEC＇s 0.18μm EEPROM process. The polysilicon-assisted SCRs take advantage of polysilicon layer to help bypass electro-static discharge （E S D） current without occupying extra layout area. TLP current-voltage （I-V） measurement results show that given the same layout areas, robustness performance of polysilicon-assisted SCRs can be improved to 3 times of conventional MLSCR＇s. Moreover, one-finger such polysilicon-assisted SCRs, which occupy only 947 [3mz layout area, can undergo 7-kV HBM ESD stress. Results further demonstrate that the S-type I-V characteristics of polysilicon-assisted SCRs are adjustable to different operating conditions by changing the device dimensions. Compared with traditional SCRs, this new SCR can bypass more ESD currents and consumes smaller IC area.
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The polysilicon-assisted SCRs take advantage of polysilicon layer to help bypass electro-static discharge （E S D） current without occupying extra layout area. TLP current-voltage （I-V） measurement results show that given the same layout areas, robustness performance of polysilicon-assisted SCRs can be improved to 3 times of conventional MLSCR＇s. Moreover, one-finger such polysilicon-assisted SCRs, which occupy only 947 [3mz layout area, can undergo 7-kV HBM ESD stress. Results further demonstrate that the S-type I-V characteristics of polysilicon-assisted SCRs are adjustable to different operating conditions by changing the device dimensions. 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TLP current-voltage （I-V） measurement results show that given the same layout areas, robustness performance of polysilicon-assisted SCRs can be improved to 3 times of conventional MLSCR＇s. Moreover, one-finger such polysilicon-assisted SCRs, which occupy only 947 [3mz layout area, can undergo 7-kV HBM ESD stress. Results further demonstrate that the S-type I-V characteristics of polysilicon-assisted SCRs are adjustable to different operating conditions by changing the device dimensions. Compared with traditional SCRs, this new SCR can bypass more ESD currents and consumes smaller IC area.</description><subject>保护程序</subject><subject>多晶硅</subject><subject>微电子学</subject><subject>电子元件</subject><issn>1673-565X</issn><issn>1862-1775</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNotjk1OwzAUhCMEEqVwB4sdi0h2jF-SZVUKVIqE1HTBLvLPS3GI7BCnonAUzsKduAJGZTMzi08zc5LMWAFZyvJcnMYMOU8FiOfz5CKEjlKRU8hnyabWFp1GUuE04Rh-vr_Igoxe7cNEBt9_BNtb7V0qQ7BhQkPq5YZYR1b1HRlGP6GerHdEDkPk5F--TM5a2Qe8-vd5sr1fbZePafX0sF4uqlQDY2mpQLcmMwqYkLecFqVpJSiOSFl8VgDLeJEpXpaFEAaAIVWKawBqdGk08nlyc6x9l66Vbtd0fj-6ONh8duZwUA1mlOYsCovs9ZHVL97t3mykldSvre2xyYAyxoXgv-TxWz0</recordid><startdate>2007</startdate><enddate>2007</enddate><creator>CUI Qiang HAN Yan DONG Shu-rong LIOU Juin-jie</creator><general>Research Center for Embedded System, Zhejiang University, Hangzhou 310027, China%ESD Lab, Institute of Microelectronics and Photoelectronics, Zhejiang University, Hangzhou 310027, China</general><general>ESD Lab, Institute of Microelectronics and Photoelectronics, Zhejiang University, Hangzhou 310027, China%ESD Lab, Institute of Microelectronics and Photoelectronics, Zhejiang University, Hangzhou 310027, China</general><general>Department of Electrical and Computer Engineering, University of Central Florida, Orlando 32816, USA</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope><scope>2B.</scope><scope>4A8</scope><scope>92I</scope><scope>93N</scope><scope>PSX</scope><scope>TCJ</scope></search><sort><creationdate>2007</creationdate><title>Science Letters： A robust polysilicon-assisted SCR in ESD protection application</title><author>CUI Qiang HAN Yan DONG Shu-rong LIOU Juin-jie</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c611-9b6cfd2db615a43089dfa6b3ee010678612382b399855d661e0bb3c660dc9dce3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>保护程序</topic><topic>多晶硅</topic><topic>微电子学</topic><topic>电子元件</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>CUI Qiang HAN Yan DONG Shu-rong LIOU Juin-jie</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>Wanfang Data Journals - Hong Kong</collection><collection>WANFANG Data Centre</collection><collection>Wanfang Data Journals</collection><collection>万方数据期刊 - 香港版</collection><collection>China Online Journals (COJ)</collection><collection>China Online Journals (COJ)</collection><jtitle>Journal of Zhejiang University. A. Science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>CUI Qiang HAN Yan DONG Shu-rong LIOU Juin-jie</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Science Letters： A robust polysilicon-assisted SCR in ESD protection application</atitle><jtitle>Journal of Zhejiang University. A. Science</jtitle><addtitle>Journal of Zhejiang University Science</addtitle><date>2007</date><risdate>2007</risdate><volume>8</volume><issue>12</issue><spage>1879</spage><epage>1883</epage><pages>1879-1883</pages><issn>1673-565X</issn><eissn>1862-1775</eissn><abstract>A novel polysilicon-assisted silicon-controlled rectifier （SCR） is presented and analyzed in this paper, which is fabricated in HHNEC＇s 0.18μm EEPROM process. The polysilicon-assisted SCRs take advantage of polysilicon layer to help bypass electro-static discharge （E S D） current without occupying extra layout area. TLP current-voltage （I-V） measurement results show that given the same layout areas, robustness performance of polysilicon-assisted SCRs can be improved to 3 times of conventional MLSCR＇s. Moreover, one-finger such polysilicon-assisted SCRs, which occupy only 947 [3mz layout area, can undergo 7-kV HBM ESD stress. Results further demonstrate that the S-type I-V characteristics of polysilicon-assisted SCRs are adjustable to different operating conditions by changing the device dimensions. Compared with traditional SCRs, this new SCR can bypass more ESD currents and consumes smaller IC area.</abstract><pub>Research Center for Embedded System, Zhejiang University, Hangzhou 310027, China%ESD Lab, Institute of Microelectronics and Photoelectronics, Zhejiang University, Hangzhou 310027, China</pub><tpages>5</tpages></addata></record>
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title	Science Letters： A robust polysilicon-assisted SCR in ESD protection application
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