Characterization of CuInS2 thin films prepared by sulfurization of Cu-In precursor

Characterization of CuInS2 thin films prepared by sulfurization of Cu-In precursor

CuInS2 thin films were prepared by sulfurization of Cu-In precursors. The influences of the deposition sequence of Cu and In layers, such as Cu/In, Cu/In/In, and In/Cu/In, on structure, topography, and optical properties of CuInS2 thin films were investigated. X-ray diffraction results show that the...

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Veröffentlicht in:Transactions of Nonferrous Metals Society of China 2008-10, Vol.18 (5), p.1083-1088
1. Verfasser: 阎有花 刘迎春 方玲 朱景森 赵海花 李德仁 卢志超 周少雄
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沉积层序
金属学
铜铟薄膜
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description CuInS2 thin films were prepared by sulfurization of Cu-In precursors. The influences of the deposition sequence of Cu and In layers, such as Cu/In, Cu/In/In, and In/Cu/In, on structure, topography, and optical properties of CuInS2 thin films were investigated. X-ray diffraction results show that the deposition sequence of Cu and In layers affects the crystalline quality of CuInS2 films. Atomic force microstructure images reveal that the grain size and surface roughness are related to the deposition sequence used. When the deposition sequence of precursor is In/Cu/In, the CuInS2 thin films show a single-phase chalcopyrite structure with （112） preferred orientation. The surface morphology of CIS films is uniform and compacted. The absorption coefficient is larger than 10^4 cm^-1 with optical band gap Egclose to 1.4 eV.
doi_str_mv 10.1016/S1003-6326(08)60185-5
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The influences of the deposition sequence of Cu and In layers, such as Cu/In, Cu/In/In, and In/Cu/In, on structure, topography, and optical properties of CuInS2 thin films were investigated. X-ray diffraction results show that the deposition sequence of Cu and In layers affects the crystalline quality of CuInS2 films. Atomic force microstructure images reveal that the grain size and surface roughness are related to the deposition sequence used. When the deposition sequence of precursor is In/Cu/In, the CuInS2 thin films show a single-phase chalcopyrite structure with （112） preferred orientation. The surface morphology of CIS films is uniform and compacted. 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subjects 沉积层序
金属学
铜铟薄膜
title Characterization of CuInS2 thin films prepared by sulfurization of Cu-In precursor
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