Growth and interface of amorphous La2Hf2O7/Si thin film
Amorphous La2Hf2O7 thin films were deposited on Si（100） substrate by pulsed laser deposition （PLD） method under different con-ditions. The interfacial states of the La2Hf2O7/Si films were studied by synchrotron X-ray reflectivity （XRR） and X-ray photoelectron spec-troscopy （XPS）. When grown under va...
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| Veröffentlicht in: | Journal of rare earths 2012-02, Vol.30 (2), p.189-192 |
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| creator | 程学瑞 戚泽明 张焕君 张国斌 潘国强 |
| description | Amorphous La2Hf2O7 thin films were deposited on Si（100） substrate by pulsed laser deposition （PLD） method under different con-ditions. The interfacial states of the La2Hf2O7/Si films were studied by synchrotron X-ray reflectivity （XRR） and X-ray photoelectron spec-troscopy （XPS）. When grown under vacuum condition, silicate, silicide and few SiOx were formed in the interface layer. However, the Hf-silicide formation could be effectively eliminated by the ambient oxygen pressure during film growth. The result revealed that the La2Hf2O7/Si interlayer was intimately related with growth condition. Insufficient supply of oxygen would cause Hf-silicide formation at the interface and it could be most effectively controlled by the ambient oxygen pressure during film growth. |
| doi_str_mv | 10.1016/S1002-0721(12)60020-9 |
| format | Article |
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The interfacial states of the La2Hf2O7/Si films were studied by synchrotron X-ray reflectivity （XRR） and X-ray photoelectron spec-troscopy （XPS）. When grown under vacuum condition, silicate, silicide and few SiOx were formed in the interface layer. However, the Hf-silicide formation could be effectively eliminated by the ambient oxygen pressure during film growth. The result revealed that the La2Hf2O7/Si interlayer was intimately related with growth condition. Insufficient supply of oxygen would cause Hf-silicide formation at the interface and it could be most effectively controlled by the ambient oxygen pressure during film growth.</description><identifier>ISSN: 1002-0721</identifier><identifier>EISSN: 2509-4963</identifier><identifier>DOI: 10.1016/S1002-0721(12)60020-9</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Film growth ; Hafnium ; La2Hf2O7 films ; pulsed laser deposition ; Rare earth metals ; rare earths ; Silicides ; Silicon ; Si（100） ; Thin films ; X-ray photoelectron spectroscopy ; X-rays ; X射线光电子能谱 ; X射线反射 ; 接口 ; 氧气压力 ; 生长过程 ; 脉冲激光沉积 ; 非晶薄膜</subject><ispartof>Journal of rare earths, 2012-02, Vol.30 (2), p.189-192</ispartof><rights>2012 The Chinese Society of Rare Earths</rights><rights>Copyright © Wanfang Data Co. Ltd. All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c332t-f31fb09fd2385ddfee67d700d4eb0c08ce9a00c882503f817e8f17237653a5a93</citedby><cites>FETCH-LOGICAL-c332t-f31fb09fd2385ddfee67d700d4eb0c08ce9a00c882503f817e8f17237653a5a93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/84120X/84120X.jpg</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S1002-0721(12)60020-9$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3549,27923,27924,45994</link.rule.ids></links><search><creatorcontrib>程学瑞 戚泽明 张焕君 张国斌 潘国强</creatorcontrib><title>Growth and interface of amorphous La2Hf2O7/Si thin film</title><title>Journal of rare earths</title><addtitle>Journal of Rare Earths</addtitle><description>Amorphous La2Hf2O7 thin films were deposited on Si（100） substrate by pulsed laser deposition （PLD） method under different con-ditions. The interfacial states of the La2Hf2O7/Si films were studied by synchrotron X-ray reflectivity （XRR） and X-ray photoelectron spec-troscopy （XPS）. When grown under vacuum condition, silicate, silicide and few SiOx were formed in the interface layer. However, the Hf-silicide formation could be effectively eliminated by the ambient oxygen pressure during film growth. The result revealed that the La2Hf2O7/Si interlayer was intimately related with growth condition. Insufficient supply of oxygen would cause Hf-silicide formation at the interface and it could be most effectively controlled by the ambient oxygen pressure during film growth.</description><subject>Film growth</subject><subject>Hafnium</subject><subject>La2Hf2O7 films</subject><subject>pulsed laser deposition</subject><subject>Rare earth metals</subject><subject>rare earths</subject><subject>Silicides</subject><subject>Silicon</subject><subject>Si（100）</subject><subject>Thin films</subject><subject>X-ray photoelectron spectroscopy</subject><subject>X-rays</subject><subject>X射线光电子能谱</subject><subject>X射线反射</subject><subject>接口</subject><subject>氧气压力</subject><subject>生长过程</subject><subject>脉冲激光沉积</subject><subject>非晶薄膜</subject><issn>1002-0721</issn><issn>2509-4963</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LAzEQhoMoWD9-grDe9LA6Sbqb7ElE_IKCh-o5pNlJG2mTmmy1-uvNturVyWEIPDPvvC8hJxQuKND6ckwBWAmC0TPKzuv8gbLZIQNWQVMOm5rvksEfsk8OUnoF4KJqYEDEfQwf3azQvi2c7zBabbAIttCLEJezsErFSLMHy57E5dgV3cz5wrr54ojsWT1PePzTD8nL3e3zzUM5erp_vLkelYZz1pWWUzuBxraMy6ptLWItWgHQDnECBqTBRgMYKfOt3EoqUFoqGBd1xXWlG35Izrd7P7S32k_Va1hFnxXV13TdrScKGVAG_cvs2ZZdxvC2wtSphUsG53PtMRtRFBiTkta1zGi1RU0MKUW0ahndQsfPDKk-VLUJVfWJKcrUJlTVn3O1ncPs-d1hVMk49AZbF9F0qg3u3w2nP8qz4KdvLlv6lR7mAd7XNwxohpY</recordid><startdate>20120201</startdate><enddate>20120201</enddate><creator>程学瑞 戚泽明 张焕君 张国斌 潘国强</creator><general>Elsevier B.V</general><general>National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China%National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China</general><general>Department of Technology and Physics, Zhengzhou University of Light Industry, Zhengzhou 450002, China</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>2B.</scope><scope>4A8</scope><scope>92I</scope><scope>93N</scope><scope>PSX</scope><scope>TCJ</scope></search><sort><creationdate>20120201</creationdate><title>Growth and interface of amorphous La2Hf2O7/Si thin film</title><author>程学瑞 戚泽明 张焕君 张国斌 潘国强</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c332t-f31fb09fd2385ddfee67d700d4eb0c08ce9a00c882503f817e8f17237653a5a93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Film growth</topic><topic>Hafnium</topic><topic>La2Hf2O7 films</topic><topic>pulsed laser deposition</topic><topic>Rare earth metals</topic><topic>rare earths</topic><topic>Silicides</topic><topic>Silicon</topic><topic>Si（100）</topic><topic>Thin films</topic><topic>X-ray photoelectron spectroscopy</topic><topic>X-rays</topic><topic>X射线光电子能谱</topic><topic>X射线反射</topic><topic>接口</topic><topic>氧气压力</topic><topic>生长过程</topic><topic>脉冲激光沉积</topic><topic>非晶薄膜</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>程学瑞 戚泽明 张焕君 张国斌 潘国强</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Wanfang Data Journals - Hong Kong</collection><collection>WANFANG Data Centre</collection><collection>Wanfang Data Journals</collection><collection>万方数据期刊 - 香港版</collection><collection>China Online Journals (COJ)</collection><collection>China Online Journals (COJ)</collection><jtitle>Journal of rare earths</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>程学瑞 戚泽明 张焕君 张国斌 潘国强</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth and interface of amorphous La2Hf2O7/Si thin film</atitle><jtitle>Journal of rare earths</jtitle><addtitle>Journal of Rare Earths</addtitle><date>2012-02-01</date><risdate>2012</risdate><volume>30</volume><issue>2</issue><spage>189</spage><epage>192</epage><pages>189-192</pages><issn>1002-0721</issn><eissn>2509-4963</eissn><abstract>Amorphous La2Hf2O7 thin films were deposited on Si（100） substrate by pulsed laser deposition （PLD） method under different con-ditions. The interfacial states of the La2Hf2O7/Si films were studied by synchrotron X-ray reflectivity （XRR） and X-ray photoelectron spec-troscopy （XPS）. When grown under vacuum condition, silicate, silicide and few SiOx were formed in the interface layer. However, the Hf-silicide formation could be effectively eliminated by the ambient oxygen pressure during film growth. The result revealed that the La2Hf2O7/Si interlayer was intimately related with growth condition. Insufficient supply of oxygen would cause Hf-silicide formation at the interface and it could be most effectively controlled by the ambient oxygen pressure during film growth.</abstract><pub>Elsevier B.V</pub><doi>10.1016/S1002-0721(12)60020-9</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
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| ispartof | Journal of rare earths, 2012-02, Vol.30 (2), p.189-192 |
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| language | eng |
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| source | ScienceDirect Journals (5 years ago - present); Alma/SFX Local Collection |
| subjects | Film growth Hafnium La2Hf2O7 films pulsed laser deposition Rare earth metals rare earths Silicides Silicon Si（100） Thin films X-ray photoelectron spectroscopy X-rays X射线光电子能谱 X射线反射 接口 氧气压力 生长过程 脉冲激光沉积 非晶薄膜 |
| title | Growth and interface of amorphous La2Hf2O7/Si thin film |
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