Determination of Ring-OSF Position in Czochralski Silicon Single Crystals by Numerical Analysis of Distribution of Grown-in Defects

O7; A numerical analysis technique that incorporates Voronkov's model were examined and used to estimate the distribution of defects during crystal growth. By comparisons of the distribution of the density of LSTD and the position of R-OSF in non-nitrogen-doped (non-N-doped) and nitrogen-doped...

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Veröffentlicht in:	稀土学报（英文版） 2006-03, Vol.24 (z1), p.213-216
Hauptverfasser:	Sunao Abe, Takahiro Terada, Yasutada Nakagawa, Kazuhiko Kashima
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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