Determination of Ring-OSF Position in Czochralski Silicon Single Crystals by Numerical Analysis of Distribution of Grown-in Defects

O7; A numerical analysis technique that incorporates Voronkov's model were examined and used to estimate the distribution of defects during crystal growth. By comparisons of the distribution of the density of LSTD and the position of R-OSF in non-nitrogen-doped (non-N-doped) and nitrogen-doped...

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Veröffentlicht in:稀土学报(英文版) 2006-03, Vol.24 (z1), p.213-216
Hauptverfasser: Sunao Abe, Takahiro Terada, Yasutada Nakagawa, Kazuhiko Kashima
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creator Sunao Abe
Takahiro Terada
Yasutada Nakagawa
Kazuhiko Kashima
description O7; A numerical analysis technique that incorporates Voronkov's model were examined and used to estimate the distribution of defects during crystal growth. By comparisons of the distribution of the density of LSTD and the position of R-OSF in non-nitrogen-doped (non-N-doped) and nitrogen-doped (N-doped) silicon crystals, it is found that the results of the numerical analyses agree with practically evaluated data. The observations suggest that the R-OSF nucleus is a VO2 complex that is formed by bonds between oxygen atoms and residual vacancies consumed during the formation of void defects. This suggests that Voronkov's model can be used to accurately predict the generation and growth of defects in silicon crystals. This numerical analysis technique was also found to be an effective method of estimating the distribution of defects in silicon crystals during crystal growth.
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fullrecord <record><control><sourceid>wanfang_jour</sourceid><recordid>TN_cdi_wanfang_journals_zgxtxb_e2006z1057</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><wanfj_id>zgxtxb_e2006z1057</wanfj_id><sourcerecordid>zgxtxb_e2006z1057</sourcerecordid><originalsourceid>FETCH-LOGICAL-s189t-cdcc5c5a3dd5c9ee54b2d454468b20ce18e0180121d900c327ba91a9075bf2003</originalsourceid><addsrcrecordid>eNo1j81OwzAQhH0AiVJ4B185RFo7cZMcq4QWpIoiAufIdpzgkjqS7ahNrrw45u-00uzom5kLtCAANIKUkit07dwBIE5ZDgv0WSqv7FEb7vVg8NDiF226aF9t8PPg9I-oDS7mQb5b3rsPjSvdaxnkKhh7hQs7OR8-WEz4aTwqqyXv8drwfnLafRNL7bzVYvxP2NrhZKJALVWrpHc36LINAHX7d5fobXP_WjxEu_32sVjvIkey3EeykZJJxuOmYTJXiiWCNglLklUmKEhFMgUkA0JJkwPImKaC54TnkDLR0rB4ie5-uSduWm66-jCMNvR09dyd_VnUKrhWMwGWxl_UYV98</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Determination of Ring-OSF Position in Czochralski Silicon Single Crystals by Numerical Analysis of Distribution of Grown-in Defects</title><source>Access via ScienceDirect (Elsevier)</source><source>Alma/SFX Local Collection</source><creator>Sunao Abe ; Takahiro Terada ; Yasutada Nakagawa ; Kazuhiko Kashima</creator><creatorcontrib>Sunao Abe ; Takahiro Terada ; Yasutada Nakagawa ; Kazuhiko Kashima</creatorcontrib><description>O7; A numerical analysis technique that incorporates Voronkov's model were examined and used to estimate the distribution of defects during crystal growth. By comparisons of the distribution of the density of LSTD and the position of R-OSF in non-nitrogen-doped (non-N-doped) and nitrogen-doped (N-doped) silicon crystals, it is found that the results of the numerical analyses agree with practically evaluated data. The observations suggest that the R-OSF nucleus is a VO2 complex that is formed by bonds between oxygen atoms and residual vacancies consumed during the formation of void defects. This suggests that Voronkov's model can be used to accurately predict the generation and growth of defects in silicon crystals. This numerical analysis technique was also found to be an effective method of estimating the distribution of defects in silicon crystals during crystal growth.</description><identifier>ISSN: 1002-0721</identifier><language>eng</language><publisher>Silicon Company, Toshiba Ceramics Co.Ltd., 6-861-5 Higashikou, Seirou-machi, Niigata 957-0197, Japan%Corporate Manufacturing Engineering Center, Toshiba Corp., 33 Shin-isogo, Isogo-ku, Yokohama, Kanagawa 235-0017, Japan%New Business Creation Division, Toshiba Ceramics Co.Ltd., 1-6-3 Osaki, Shinagawa-ku, Tokyo 141-0032, Japan</publisher><ispartof>稀土学报(英文版), 2006-03, Vol.24 (z1), p.213-216</ispartof><rights>Copyright © Wanfang Data Co. Ltd. All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://www.wanfangdata.com.cn/images/PeriodicalImages/zgxtxb-e/zgxtxb-e.jpg</thumbnail><link.rule.ids>315,782,786</link.rule.ids></links><search><creatorcontrib>Sunao Abe</creatorcontrib><creatorcontrib>Takahiro Terada</creatorcontrib><creatorcontrib>Yasutada Nakagawa</creatorcontrib><creatorcontrib>Kazuhiko Kashima</creatorcontrib><title>Determination of Ring-OSF Position in Czochralski Silicon Single Crystals by Numerical Analysis of Distribution of Grown-in Defects</title><title>稀土学报(英文版)</title><description>O7; A numerical analysis technique that incorporates Voronkov's model were examined and used to estimate the distribution of defects during crystal growth. By comparisons of the distribution of the density of LSTD and the position of R-OSF in non-nitrogen-doped (non-N-doped) and nitrogen-doped (N-doped) silicon crystals, it is found that the results of the numerical analyses agree with practically evaluated data. The observations suggest that the R-OSF nucleus is a VO2 complex that is formed by bonds between oxygen atoms and residual vacancies consumed during the formation of void defects. This suggests that Voronkov's model can be used to accurately predict the generation and growth of defects in silicon crystals. This numerical analysis technique was also found to be an effective method of estimating the distribution of defects in silicon crystals during crystal growth.</description><issn>1002-0721</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNo1j81OwzAQhH0AiVJ4B185RFo7cZMcq4QWpIoiAufIdpzgkjqS7ahNrrw45u-00uzom5kLtCAANIKUkit07dwBIE5ZDgv0WSqv7FEb7vVg8NDiF226aF9t8PPg9I-oDS7mQb5b3rsPjSvdaxnkKhh7hQs7OR8-WEz4aTwqqyXv8drwfnLafRNL7bzVYvxP2NrhZKJALVWrpHc36LINAHX7d5fobXP_WjxEu_32sVjvIkey3EeykZJJxuOmYTJXiiWCNglLklUmKEhFMgUkA0JJkwPImKaC54TnkDLR0rB4ie5-uSduWm66-jCMNvR09dyd_VnUKrhWMwGWxl_UYV98</recordid><startdate>20060301</startdate><enddate>20060301</enddate><creator>Sunao Abe</creator><creator>Takahiro Terada</creator><creator>Yasutada Nakagawa</creator><creator>Kazuhiko Kashima</creator><general>Silicon Company, Toshiba Ceramics Co.Ltd., 6-861-5 Higashikou, Seirou-machi, Niigata 957-0197, Japan%Corporate Manufacturing Engineering Center, Toshiba Corp., 33 Shin-isogo, Isogo-ku, Yokohama, Kanagawa 235-0017, Japan%New Business Creation Division, Toshiba Ceramics Co.Ltd., 1-6-3 Osaki, Shinagawa-ku, Tokyo 141-0032, Japan</general><scope>2B.</scope><scope>4A8</scope><scope>92I</scope><scope>93N</scope><scope>PSX</scope><scope>TCJ</scope></search><sort><creationdate>20060301</creationdate><title>Determination of Ring-OSF Position in Czochralski Silicon Single Crystals by Numerical Analysis of Distribution of Grown-in Defects</title><author>Sunao Abe ; Takahiro Terada ; Yasutada Nakagawa ; Kazuhiko Kashima</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-s189t-cdcc5c5a3dd5c9ee54b2d454468b20ce18e0180121d900c327ba91a9075bf2003</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sunao Abe</creatorcontrib><creatorcontrib>Takahiro Terada</creatorcontrib><creatorcontrib>Yasutada Nakagawa</creatorcontrib><creatorcontrib>Kazuhiko Kashima</creatorcontrib><collection>Wanfang Data Journals - Hong Kong</collection><collection>WANFANG Data Centre</collection><collection>Wanfang Data Journals</collection><collection>万方数据期刊 - 香港版</collection><collection>China Online Journals (COJ)</collection><collection>China Online Journals (COJ)</collection><jtitle>稀土学报(英文版)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sunao Abe</au><au>Takahiro Terada</au><au>Yasutada Nakagawa</au><au>Kazuhiko Kashima</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Determination of Ring-OSF Position in Czochralski Silicon Single Crystals by Numerical Analysis of Distribution of Grown-in Defects</atitle><jtitle>稀土学报(英文版)</jtitle><date>2006-03-01</date><risdate>2006</risdate><volume>24</volume><issue>z1</issue><spage>213</spage><epage>216</epage><pages>213-216</pages><issn>1002-0721</issn><abstract>O7; A numerical analysis technique that incorporates Voronkov's model were examined and used to estimate the distribution of defects during crystal growth. By comparisons of the distribution of the density of LSTD and the position of R-OSF in non-nitrogen-doped (non-N-doped) and nitrogen-doped (N-doped) silicon crystals, it is found that the results of the numerical analyses agree with practically evaluated data. The observations suggest that the R-OSF nucleus is a VO2 complex that is formed by bonds between oxygen atoms and residual vacancies consumed during the formation of void defects. This suggests that Voronkov's model can be used to accurately predict the generation and growth of defects in silicon crystals. This numerical analysis technique was also found to be an effective method of estimating the distribution of defects in silicon crystals during crystal growth.</abstract><pub>Silicon Company, Toshiba Ceramics Co.Ltd., 6-861-5 Higashikou, Seirou-machi, Niigata 957-0197, Japan%Corporate Manufacturing Engineering Center, Toshiba Corp., 33 Shin-isogo, Isogo-ku, Yokohama, Kanagawa 235-0017, Japan%New Business Creation Division, Toshiba Ceramics Co.Ltd., 1-6-3 Osaki, Shinagawa-ku, Tokyo 141-0032, Japan</pub><tpages>4</tpages></addata></record>
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title Determination of Ring-OSF Position in Czochralski Silicon Single Crystals by Numerical Analysis of Distribution of Grown-in Defects
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-05T13%3A17%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-wanfang_jour&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Determination%20of%20Ring-OSF%20Position%20in%20Czochralski%20Silicon%20Single%20Crystals%20by%20Numerical%20Analysis%20of%20Distribution%20of%20Grown-in%20Defects&rft.jtitle=%E7%A8%80%E5%9C%9F%E5%AD%A6%E6%8A%A5%EF%BC%88%E8%8B%B1%E6%96%87%E7%89%88%EF%BC%89&rft.au=Sunao%20Abe&rft.date=2006-03-01&rft.volume=24&rft.issue=z1&rft.spage=213&rft.epage=216&rft.pages=213-216&rft.issn=1002-0721&rft_id=info:doi/&rft_dat=%3Cwanfang_jour%3Ezgxtxb_e2006z1057%3C/wanfang_jour%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_wanfj_id=zgxtxb_e2006z1057&rfr_iscdi=true