Growth of GaN/AlxGa1-xN (x=0.65) Superlattices on Si(111) Substrates Using RF-MBE
O78; Superlattices with varying GaN well widths (2, 3, 6, 9 nm) and fixed AlGaN barrier (8 nm) with high Al-content (x=0.65) were grown. Streaky RHEED patterns indicated 2D growth mode for the superlattices. XRD measurements showed multiple satellite peaks corresponding to uniform periodicity of the...
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| Veröffentlicht in: | 稀土学报（英文版） 2006-03, Vol.24 (z1), p.1-3 |
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| container_title | 稀土学报（英文版） |
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| creator | Armando S Somintac Tomo Kikuchi Michiya Odawara Takashi Udagawa Motoi Wada Tadashi Ohachi |
| description | O78; Superlattices with varying GaN well widths (2, 3, 6, 9 nm) and fixed AlGaN barrier (8 nm) with high Al-content (x=0.65) were grown. Streaky RHEED patterns indicated 2D growth mode for the superlattices. XRD measurements showed multiple satellite peaks corresponding to uniform periodicity of the GaN/AlGaN pairs. The AlGaN barrier XRD peak also shifted with increasing well widths, while the GaN XRD peak was nominally unchanged. Room temperature photoluminescence experiments revealed peak emissions at energies lower than the bulk GaN energy gap. The large red shift with respect to the bulk gap is attributed to significant Stark effect for wide multiple quantum wells. |
| doi_str_mv | 10.1016/S1002-0721(06)60055-0 |
| format | Article |
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Streaky RHEED patterns indicated 2D growth mode for the superlattices. XRD measurements showed multiple satellite peaks corresponding to uniform periodicity of the GaN/AlGaN pairs. The AlGaN barrier XRD peak also shifted with increasing well widths, while the GaN XRD peak was nominally unchanged. Room temperature photoluminescence experiments revealed peak emissions at energies lower than the bulk GaN energy gap. The large red shift with respect to the bulk gap is attributed to significant Stark effect for wide multiple quantum wells.</abstract><pub>Department of Electric Engineering, Doshisha University, 1-3 Miyakodani, Tatara, Kyotanabe, Kyoto 610-0321, Japan%Electronic Materials Division, Electronics Section, Showa Denko K.K., 1505 Shimokagemori, Chichibu, Saitama 369-1871, Japan</pub><doi>10.1016/S1002-0721(06)60055-0</doi><tpages>3</tpages></addata></record> |
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| title | Growth of GaN/AlxGa1-xN (x=0.65) Superlattices on Si(111) Substrates Using RF-MBE |
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