Degradation and breakdown behaviors of SGTs under repetitive unclamped inductive switching avalanche stress

The repetitive unclamped inductive switching (UIS) avalanche stress is conducted to investigate the degradation and breakdown behaviors of conventional shield gate trench MOSFET (C-SGT) and P-ring SGT MOSFETs (P-SGT). It is found that the static and dynamic parameters of both devices show different...

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Veröffentlicht in:	Chinese physics B 2022-09, Vol.31 (9), p.97303-547
Hauptverfasser:	Zhu, Chenkai, Zhao, Linna, Yang, Zhuo, Gu, Xiaofeng
Format:	Artikel
Sprache:	eng
Schlagworte:	degradation repetitive unclamped inductive switching stress shield gate trench MOSFET static and dynamic parameters
Online-Zugang:	Volltext
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