Degradation and breakdown behaviors of SGTs under repetitive unclamped inductive switching avalanche stress
The repetitive unclamped inductive switching (UIS) avalanche stress is conducted to investigate the degradation and breakdown behaviors of conventional shield gate trench MOSFET (C-SGT) and P-ring SGT MOSFETs (P-SGT). It is found that the static and dynamic parameters of both devices show different...
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| Veröffentlicht in: | Chinese physics B 2022-09, Vol.31 (9), p.97303-547 |
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| creator | Zhu, Chenkai Zhao, Linna Yang, Zhuo Gu, Xiaofeng |
| description | The repetitive unclamped inductive switching (UIS) avalanche stress is conducted to investigate the degradation and breakdown behaviors of conventional shield gate trench MOSFET (C-SGT) and P-ring SGT MOSFETs (P-SGT). It is found that the static and dynamic parameters of both devices show different degrees of degradation. Combining experimental and simulation results, the hot holes trapped into the Si/SiO
2
interface and the increase of crystal lattice temperature should be responsible for the degradation and breakdown behaviors. Moreover, under repetitive UIS avalanche stress, the reliability of P-SGT overcomes that of C-SGT, benefitting from the decreasing of the impact ionization rate at bottom of field oxide caused by the existence of P-ring. |
| doi_str_mv | 10.1088/1674-1056/ac615b |
| format | Article |
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2
interface and the increase of crystal lattice temperature should be responsible for the degradation and breakdown behaviors. Moreover, under repetitive UIS avalanche stress, the reliability of P-SGT overcomes that of C-SGT, benefitting from the decreasing of the impact ionization rate at bottom of field oxide caused by the existence of P-ring.</description><identifier>ISSN: 1674-1056</identifier><identifier>DOI: 10.1088/1674-1056/ac615b</identifier><language>eng</language><publisher>Chinese Physical Society and IOP Publishing Ltd</publisher><subject>degradation ; repetitive unclamped inductive switching stress ; shield gate trench MOSFET ; static and dynamic parameters</subject><ispartof>Chinese physics B, 2022-09, Vol.31 (9), p.97303-547</ispartof><rights>2022 Chinese Physical Society and IOP Publishing Ltd</rights><rights>Copyright © Wanfang Data Co. Ltd. All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c265t-248cd7478cb09255435d0f27c5bfaf4d824b7e87a4d96e9806fd7b86258fd3a43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://www.wanfangdata.com.cn/images/PeriodicalImages/zgwl-e/zgwl-e.jpg</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/1674-1056/ac615b/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53821</link.rule.ids></links><search><creatorcontrib>Zhu, Chenkai</creatorcontrib><creatorcontrib>Zhao, Linna</creatorcontrib><creatorcontrib>Yang, Zhuo</creatorcontrib><creatorcontrib>Gu, Xiaofeng</creatorcontrib><title>Degradation and breakdown behaviors of SGTs under repetitive unclamped inductive switching avalanche stress</title><title>Chinese physics B</title><addtitle>Chin. Phys. B</addtitle><description>The repetitive unclamped inductive switching (UIS) avalanche stress is conducted to investigate the degradation and breakdown behaviors of conventional shield gate trench MOSFET (C-SGT) and P-ring SGT MOSFETs (P-SGT). It is found that the static and dynamic parameters of both devices show different degrees of degradation. Combining experimental and simulation results, the hot holes trapped into the Si/SiO
2
interface and the increase of crystal lattice temperature should be responsible for the degradation and breakdown behaviors. Moreover, under repetitive UIS avalanche stress, the reliability of P-SGT overcomes that of C-SGT, benefitting from the decreasing of the impact ionization rate at bottom of field oxide caused by the existence of P-ring.</description><subject>degradation</subject><subject>repetitive unclamped inductive switching stress</subject><subject>shield gate trench MOSFET</subject><subject>static and dynamic parameters</subject><issn>1674-1056</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp1kDtPwzAUhT2ARHnsjN5YKHUcO3FGVKAgVWKgzNaNH6nb1InstBH8elKCYGK60qdzzpU-hK4TcpcQIWZJlrNpQng2A5UlvDxBk190hs5j3BCSJYSmE7R9MFUADZ1rPAavcRkMbHXTe1yaNRxcEyJuLH5brCLee20CDqY1nevcwQxA1bBrjcbO6736ZrF3nVo7X2E4QA1erQfWBRPjJTq1UEdz9XMv0PvT42r-PF2-Ll7m98upohnvppQJpXOWC1WSgnLOUq6JpbnipQXLtKCszI3IgekiM4UgmdV5KTLKhdUpsPQC3Yy7PXgLvpKbZh_88FF-Vn0tDSWUkmIwMCTJmFShiTEYK9vgdhA-ZELkUaU8epNHb3JUOVRux4pr2r_hf-NfUgh47g</recordid><startdate>20220901</startdate><enddate>20220901</enddate><creator>Zhu, Chenkai</creator><creator>Zhao, Linna</creator><creator>Yang, Zhuo</creator><creator>Gu, Xiaofeng</creator><general>Chinese Physical Society and IOP Publishing Ltd</general><general>Engineering Research Center ofIoT Technology Applications(Ministry of Education),Department of Electronic Engineering,Jiangnan University,Wuxi 214122,China%Wuxi NCE Power Company,Ltd.,Wuxi 214028,China</general><scope>AAYXX</scope><scope>CITATION</scope><scope>2B.</scope><scope>4A8</scope><scope>92I</scope><scope>93N</scope><scope>PSX</scope><scope>TCJ</scope></search><sort><creationdate>20220901</creationdate><title>Degradation and breakdown behaviors of SGTs under repetitive unclamped inductive switching avalanche stress</title><author>Zhu, Chenkai ; Zhao, Linna ; Yang, Zhuo ; Gu, Xiaofeng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c265t-248cd7478cb09255435d0f27c5bfaf4d824b7e87a4d96e9806fd7b86258fd3a43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>degradation</topic><topic>repetitive unclamped inductive switching stress</topic><topic>shield gate trench MOSFET</topic><topic>static and dynamic parameters</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhu, Chenkai</creatorcontrib><creatorcontrib>Zhao, Linna</creatorcontrib><creatorcontrib>Yang, Zhuo</creatorcontrib><creatorcontrib>Gu, Xiaofeng</creatorcontrib><collection>CrossRef</collection><collection>Wanfang Data Journals - Hong Kong</collection><collection>WANFANG Data Centre</collection><collection>Wanfang Data Journals</collection><collection>万方数据期刊 - 香港版</collection><collection>China Online Journals (COJ)</collection><collection>China Online Journals (COJ)</collection><jtitle>Chinese physics B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhu, Chenkai</au><au>Zhao, Linna</au><au>Yang, Zhuo</au><au>Gu, Xiaofeng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Degradation and breakdown behaviors of SGTs under repetitive unclamped inductive switching avalanche stress</atitle><jtitle>Chinese physics B</jtitle><addtitle>Chin. Phys. B</addtitle><date>2022-09-01</date><risdate>2022</risdate><volume>31</volume><issue>9</issue><spage>97303</spage><epage>547</epage><pages>97303-547</pages><issn>1674-1056</issn><abstract>The repetitive unclamped inductive switching (UIS) avalanche stress is conducted to investigate the degradation and breakdown behaviors of conventional shield gate trench MOSFET (C-SGT) and P-ring SGT MOSFETs (P-SGT). It is found that the static and dynamic parameters of both devices show different degrees of degradation. Combining experimental and simulation results, the hot holes trapped into the Si/SiO
2
interface and the increase of crystal lattice temperature should be responsible for the degradation and breakdown behaviors. Moreover, under repetitive UIS avalanche stress, the reliability of P-SGT overcomes that of C-SGT, benefitting from the decreasing of the impact ionization rate at bottom of field oxide caused by the existence of P-ring.</abstract><pub>Chinese Physical Society and IOP Publishing Ltd</pub><doi>10.1088/1674-1056/ac615b</doi><tpages>6</tpages></addata></record> |
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| subjects | degradation repetitive unclamped inductive switching stress shield gate trench MOSFET static and dynamic parameters |
| title | Degradation and breakdown behaviors of SGTs under repetitive unclamped inductive switching avalanche stress |
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