Conductance and dielectric properties of hydrogen and hydroxyl passivated SiCNWs
Based on the transport theory and the polarization relaxation model,the effects of hydrogen and hydroxyl passivation on the conductivity and dielectric properties of silicon carbide nanowires(SiCNWs)with different sizes are numerically simulated.The results show that the variation trend of conductiv...
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Veröffentlicht in: | Chinese physics B 2021-10, Vol.30 (10), p.107801-616 |
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description | Based on the transport theory and the polarization relaxation model,the effects of hydrogen and hydroxyl passivation on the conductivity and dielectric properties of silicon carbide nanowires(SiCNWs)with different sizes are numerically simulated.The results show that the variation trend of conductivity and band gap of passivated SiCNWs are opposite to the scenario of the size effect of bare SiCNWs.Among the influencing factors of conductivity,the carrier concentration plays a leading role.In the dielectric properties,the bare SiCNWs have a strong dielectric response in the blue light region,while passivated SiCNWs show a more obvious dielectric response in the far ultraviolet-light region.In particular,hydroxyl passivation produces a strong dielectric relaxation in the microwave band,indicating that hydroxyl passivated SiCNWs have a wide range of applications in electromagnetic absorption and shielding. |
doi_str_mv | 10.1088/1674-1056/abf130 |
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All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c275t-67c724f959415ae837f1293b26080a1c607c56c4fe6c158695e631f4916c2e293</citedby><cites>FETCH-LOGICAL-c275t-67c724f959415ae837f1293b26080a1c607c56c4fe6c158695e631f4916c2e293</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://www.wanfangdata.com.cn/images/PeriodicalImages/zgwl-e/zgwl-e.jpg</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Ma, Wan-Duo</creatorcontrib><creatorcontrib>Li, Ya-Lin</creatorcontrib><creatorcontrib>Gong, Pei</creatorcontrib><creatorcontrib>Jia, Ya-Hui</creatorcontrib><creatorcontrib>Fang, Xiao-Yong</creatorcontrib><title>Conductance and dielectric properties of hydrogen and hydroxyl passivated SiCNWs</title><title>Chinese physics B</title><description>Based on the transport theory and the polarization relaxation model,the effects of hydrogen and hydroxyl passivation on the conductivity and dielectric properties of silicon carbide nanowires(SiCNWs)with different sizes are numerically simulated.The results show that the variation trend of conductivity and band gap of passivated SiCNWs are opposite to the scenario of the size effect of bare SiCNWs.Among the influencing factors of conductivity,the carrier concentration plays a leading role.In the dielectric properties,the bare SiCNWs have a strong dielectric response in the blue light region,while passivated SiCNWs show a more obvious dielectric response in the far ultraviolet-light region.In particular,hydroxyl passivation produces a strong dielectric relaxation in the microwave band,indicating that hydroxyl passivated SiCNWs have a wide range of applications in electromagnetic absorption and shielding.</description><issn>1674-1056</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNo9kEtLxDAUhbNQcBzdu8zOVZ170yZtl1J8waCCisuQSW_GDjUtScex_nrnIa4u5_JxDnyMXSBcIRTFDFWeJQhSzczCYQpHbPL_OmGnMa4AFIJIJ-y56ny9toPxlrjxNa8baskOobG8D11PYWgo8s7xj7EO3ZL8ntqH77HlvYmx-TID1fylqR7f4xk7dqaNdP53p-zt9ua1uk_mT3cP1fU8sSKXQ6Jym4vMlbLMUBoq0tyhKNOFUFCAQasgt1LZzJGyKAtVSlIpuqxEZQVtySm7PPRujHfGL_WqWwe_XdQ_y02rSYBABCjkloQDaUMXYyCn-9B8mjBqBL3zpXdy9E6OPvhKfwHQBF-q</recordid><startdate>20211001</startdate><enddate>20211001</enddate><creator>Ma, Wan-Duo</creator><creator>Li, Ya-Lin</creator><creator>Gong, Pei</creator><creator>Jia, Ya-Hui</creator><creator>Fang, Xiao-Yong</creator><general>Key Laboratory for Microstructural Material Physics of Hebei Province,School of Science,Yanshan University,Qinhuangdao 066004,China</general><scope>AAYXX</scope><scope>CITATION</scope><scope>2B.</scope><scope>4A8</scope><scope>92I</scope><scope>93N</scope><scope>PSX</scope><scope>TCJ</scope></search><sort><creationdate>20211001</creationdate><title>Conductance and dielectric properties of hydrogen and hydroxyl passivated SiCNWs</title><author>Ma, Wan-Duo ; Li, Ya-Lin ; Gong, Pei ; Jia, Ya-Hui ; Fang, Xiao-Yong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c275t-67c724f959415ae837f1293b26080a1c607c56c4fe6c158695e631f4916c2e293</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ma, Wan-Duo</creatorcontrib><creatorcontrib>Li, Ya-Lin</creatorcontrib><creatorcontrib>Gong, Pei</creatorcontrib><creatorcontrib>Jia, Ya-Hui</creatorcontrib><creatorcontrib>Fang, Xiao-Yong</creatorcontrib><collection>CrossRef</collection><collection>Wanfang Data Journals - Hong Kong</collection><collection>WANFANG Data Centre</collection><collection>Wanfang Data Journals</collection><collection>万方数据期刊 - 香港版</collection><collection>China Online Journals (COJ)</collection><collection>China Online Journals (COJ)</collection><jtitle>Chinese physics B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ma, Wan-Duo</au><au>Li, Ya-Lin</au><au>Gong, Pei</au><au>Jia, Ya-Hui</au><au>Fang, Xiao-Yong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Conductance and dielectric properties of hydrogen and hydroxyl passivated SiCNWs</atitle><jtitle>Chinese physics B</jtitle><date>2021-10-01</date><risdate>2021</risdate><volume>30</volume><issue>10</issue><spage>107801</spage><epage>616</epage><pages>107801-616</pages><issn>1674-1056</issn><abstract>Based on the transport theory and the polarization relaxation model,the effects of hydrogen and hydroxyl passivation on the conductivity and dielectric properties of silicon carbide nanowires(SiCNWs)with different sizes are numerically simulated.The results show that the variation trend of conductivity and band gap of passivated SiCNWs are opposite to the scenario of the size effect of bare SiCNWs.Among the influencing factors of conductivity,the carrier concentration plays a leading role.In the dielectric properties,the bare SiCNWs have a strong dielectric response in the blue light region,while passivated SiCNWs show a more obvious dielectric response in the far ultraviolet-light region.In particular,hydroxyl passivation produces a strong dielectric relaxation in the microwave band,indicating that hydroxyl passivated SiCNWs have a wide range of applications in electromagnetic absorption and shielding.</abstract><pub>Key Laboratory for Microstructural Material Physics of Hebei Province,School of Science,Yanshan University,Qinhuangdao 066004,China</pub><doi>10.1088/1674-1056/abf130</doi><tpages>8</tpages></addata></record> |
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title | Conductance and dielectric properties of hydrogen and hydroxyl passivated SiCNWs |
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