Strain-dependent resistance and giant gauge factor in monolayer WSe2

We report the strong dependence of resistance on uniaxial strain in monolayer WSe2 at various temperatures,where the gauge factor can reach as large as 2400.The observation of strain-dependent resistance and giant gauge factor is attributed to the emergence of nonzero Berry curvature dipole.Upon inc...

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Veröffentlicht in:中国物理B(英文版) 2021-09, Vol.30 (9), p.528-533
Hauptverfasser: Mao-Sen Qin, Xing-Guo Ye, Peng-Fei Zhu, Wen-Zheng Xu, Jing Liang, Kaihui Liu, Zhi-Min Liao
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container_issue 9
container_start_page 528
container_title 中国物理B(英文版)
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creator Mao-Sen Qin
Xing-Guo Ye
Peng-Fei Zhu
Wen-Zheng Xu
Jing Liang
Kaihui Liu
Zhi-Min Liao
description We report the strong dependence of resistance on uniaxial strain in monolayer WSe2 at various temperatures,where the gauge factor can reach as large as 2400.The observation of strain-dependent resistance and giant gauge factor is attributed to the emergence of nonzero Berry curvature dipole.Upon increasing strain,Berry curvature dipole can generate net orbital magnetization,which would introduce additional magnetic scattering,decreasing the mobility and thus conductivity.Our work demonstrates the strain engineering of Berry curvature and thus the transport properties,making monolayer WSe2 potential for application in the highly sensitive strain sensors and high-performance flexible electronics.
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title Strain-dependent resistance and giant gauge factor in monolayer WSe2
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