Strain-dependent resistance and giant gauge factor in monolayer WSe2
We report the strong dependence of resistance on uniaxial strain in monolayer WSe2 at various temperatures,where the gauge factor can reach as large as 2400.The observation of strain-dependent resistance and giant gauge factor is attributed to the emergence of nonzero Berry curvature dipole.Upon inc...
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Veröffentlicht in: | 中国物理B(英文版) 2021-09, Vol.30 (9), p.528-533 |
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creator | Mao-Sen Qin Xing-Guo Ye Peng-Fei Zhu Wen-Zheng Xu Jing Liang Kaihui Liu Zhi-Min Liao |
description | We report the strong dependence of resistance on uniaxial strain in monolayer WSe2 at various temperatures,where the gauge factor can reach as large as 2400.The observation of strain-dependent resistance and giant gauge factor is attributed to the emergence of nonzero Berry curvature dipole.Upon increasing strain,Berry curvature dipole can generate net orbital magnetization,which would introduce additional magnetic scattering,decreasing the mobility and thus conductivity.Our work demonstrates the strain engineering of Berry curvature and thus the transport properties,making monolayer WSe2 potential for application in the highly sensitive strain sensors and high-performance flexible electronics. |
doi_str_mv | 10.1088/1674-1056/ac11d2 |
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fullrecord | <record><control><sourceid>wanfang_jour</sourceid><recordid>TN_cdi_wanfang_journals_zgwl_e202109066</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><wanfj_id>zgwl_e202109066</wanfj_id><sourcerecordid>zgwl_e202109066</sourcerecordid><originalsourceid>FETCH-LOGICAL-s187t-3657f1dccee79b4f4a4ec17459d83626f58bf23cc172c6bf62588152e177f76e3</originalsourceid><addsrcrecordid>eNo9zT1PwzAUhWEPIFEKO6M3plBfO_7IiMqnVImhVB2jG_s6ShUcFKeq4NcTCcR0pGc4L2M3IO5AOLcCY8sChDYr9ABBnrHFP12wy5wPQhgQUi3Yw3YasUtFoE9KgdLER8pdnjB54pgCbzucscVjSzyin4aRd4l_DGno8YtGvt-SvGLnEftM13-7ZLunx_f1S7F5e35d32-KDM5OhTLaRgjeE9mqKWOJJXmwpa6CU0aaqF0TpfKzSW-aaKR2DrQksDZaQ2rJbn9_T5giprY-DMcxzcX6uz31NUkhQVTCGPUD25dMlA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Strain-dependent resistance and giant gauge factor in monolayer WSe2</title><source>IOP Publishing Journals</source><creator>Mao-Sen Qin ; Xing-Guo Ye ; Peng-Fei Zhu ; Wen-Zheng Xu ; Jing Liang ; Kaihui Liu ; Zhi-Min Liao</creator><creatorcontrib>Mao-Sen Qin ; Xing-Guo Ye ; Peng-Fei Zhu ; Wen-Zheng Xu ; Jing Liang ; Kaihui Liu ; Zhi-Min Liao</creatorcontrib><description>We report the strong dependence of resistance on uniaxial strain in monolayer WSe2 at various temperatures,where the gauge factor can reach as large as 2400.The observation of strain-dependent resistance and giant gauge factor is attributed to the emergence of nonzero Berry curvature dipole.Upon increasing strain,Berry curvature dipole can generate net orbital magnetization,which would introduce additional magnetic scattering,decreasing the mobility and thus conductivity.Our work demonstrates the strain engineering of Berry curvature and thus the transport properties,making monolayer WSe2 potential for application in the highly sensitive strain sensors and high-performance flexible electronics.</description><identifier>ISSN: 1674-1056</identifier><identifier>DOI: 10.1088/1674-1056/ac11d2</identifier><language>eng</language><publisher>State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics,School of Physics,Peking University,Beijing 100871,China</publisher><ispartof>中国物理B(英文版), 2021-09, Vol.30 (9), p.528-533</ispartof><rights>Copyright © Wanfang Data Co. Ltd. All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://www.wanfangdata.com.cn/images/PeriodicalImages/zgwl-e/zgwl-e.jpg</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Mao-Sen Qin</creatorcontrib><creatorcontrib>Xing-Guo Ye</creatorcontrib><creatorcontrib>Peng-Fei Zhu</creatorcontrib><creatorcontrib>Wen-Zheng Xu</creatorcontrib><creatorcontrib>Jing Liang</creatorcontrib><creatorcontrib>Kaihui Liu</creatorcontrib><creatorcontrib>Zhi-Min Liao</creatorcontrib><title>Strain-dependent resistance and giant gauge factor in monolayer WSe2</title><title>中国物理B(英文版)</title><description>We report the strong dependence of resistance on uniaxial strain in monolayer WSe2 at various temperatures,where the gauge factor can reach as large as 2400.The observation of strain-dependent resistance and giant gauge factor is attributed to the emergence of nonzero Berry curvature dipole.Upon increasing strain,Berry curvature dipole can generate net orbital magnetization,which would introduce additional magnetic scattering,decreasing the mobility and thus conductivity.Our work demonstrates the strain engineering of Berry curvature and thus the transport properties,making monolayer WSe2 potential for application in the highly sensitive strain sensors and high-performance flexible electronics.</description><issn>1674-1056</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNo9zT1PwzAUhWEPIFEKO6M3plBfO_7IiMqnVImhVB2jG_s6ShUcFKeq4NcTCcR0pGc4L2M3IO5AOLcCY8sChDYr9ABBnrHFP12wy5wPQhgQUi3Yw3YasUtFoE9KgdLER8pdnjB54pgCbzucscVjSzyin4aRd4l_DGno8YtGvt-SvGLnEftM13-7ZLunx_f1S7F5e35d32-KDM5OhTLaRgjeE9mqKWOJJXmwpa6CU0aaqF0TpfKzSW-aaKR2DrQksDZaQ2rJbn9_T5giprY-DMcxzcX6uz31NUkhQVTCGPUD25dMlA</recordid><startdate>20210901</startdate><enddate>20210901</enddate><creator>Mao-Sen Qin</creator><creator>Xing-Guo Ye</creator><creator>Peng-Fei Zhu</creator><creator>Wen-Zheng Xu</creator><creator>Jing Liang</creator><creator>Kaihui Liu</creator><creator>Zhi-Min Liao</creator><general>State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics,School of Physics,Peking University,Beijing 100871,China</general><scope>2B.</scope><scope>4A8</scope><scope>92I</scope><scope>93N</scope><scope>PSX</scope><scope>TCJ</scope></search><sort><creationdate>20210901</creationdate><title>Strain-dependent resistance and giant gauge factor in monolayer WSe2</title><author>Mao-Sen Qin ; Xing-Guo Ye ; Peng-Fei Zhu ; Wen-Zheng Xu ; Jing Liang ; Kaihui Liu ; Zhi-Min Liao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-s187t-3657f1dccee79b4f4a4ec17459d83626f58bf23cc172c6bf62588152e177f76e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mao-Sen Qin</creatorcontrib><creatorcontrib>Xing-Guo Ye</creatorcontrib><creatorcontrib>Peng-Fei Zhu</creatorcontrib><creatorcontrib>Wen-Zheng Xu</creatorcontrib><creatorcontrib>Jing Liang</creatorcontrib><creatorcontrib>Kaihui Liu</creatorcontrib><creatorcontrib>Zhi-Min Liao</creatorcontrib><collection>Wanfang Data Journals - Hong Kong</collection><collection>WANFANG Data Centre</collection><collection>Wanfang Data Journals</collection><collection>万方数据期刊 - 香港版</collection><collection>China Online Journals (COJ)</collection><collection>China Online Journals (COJ)</collection><jtitle>中国物理B(英文版)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mao-Sen Qin</au><au>Xing-Guo Ye</au><au>Peng-Fei Zhu</au><au>Wen-Zheng Xu</au><au>Jing Liang</au><au>Kaihui Liu</au><au>Zhi-Min Liao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Strain-dependent resistance and giant gauge factor in monolayer WSe2</atitle><jtitle>中国物理B(英文版)</jtitle><date>2021-09-01</date><risdate>2021</risdate><volume>30</volume><issue>9</issue><spage>528</spage><epage>533</epage><pages>528-533</pages><issn>1674-1056</issn><abstract>We report the strong dependence of resistance on uniaxial strain in monolayer WSe2 at various temperatures,where the gauge factor can reach as large as 2400.The observation of strain-dependent resistance and giant gauge factor is attributed to the emergence of nonzero Berry curvature dipole.Upon increasing strain,Berry curvature dipole can generate net orbital magnetization,which would introduce additional magnetic scattering,decreasing the mobility and thus conductivity.Our work demonstrates the strain engineering of Berry curvature and thus the transport properties,making monolayer WSe2 potential for application in the highly sensitive strain sensors and high-performance flexible electronics.</abstract><pub>State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics,School of Physics,Peking University,Beijing 100871,China</pub><doi>10.1088/1674-1056/ac11d2</doi><tpages>6</tpages></addata></record> |
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title | Strain-dependent resistance and giant gauge factor in monolayer WSe2 |
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