Photo-Doped Active Electrically Controlled Terahertz Modulator
We demonstrate an electric-controlled terahertz(THz) modulator which can be used to realize amplitude modulation of terahertz waves with slight photo-doping. The THz pulse transmission was efficiently modulated by electrically controlling the monolayer silicon-based device. The modulation depth reac...
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Veröffentlicht in: | 电子科技学刊 2015, Vol.13 (2), p.113-116 |
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creator | Bo Zhang Liang Zhong Ting He Jing-Ling Shen |
description | We demonstrate an electric-controlled terahertz(THz) modulator which can be used to realize amplitude modulation of terahertz waves with slight photo-doping. The THz pulse transmission was efficiently modulated by electrically controlling the monolayer silicon-based device. The modulation depth reached 100% almost when the applied voltage was 7V at an external laser intensity of 0.6W/cm2. The saturation voltage reduced with the increase of the photo-excited intensity. In a THz continuous wave(CW)system, a significant fall in both THz transmission and reflection was also observed with the increase of applied voltage. This reduction in the THz transmission and reflection was induced by the absorption for electron injection. The results show that a high-efficiency and high modulation depth broadband electric-controlled terahertz modulator in a pure Si structure has been realized. |
doi_str_mv | 10.3969/j.issn.1674-862X.2015.02.005 |
format | Article |
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The THz pulse transmission was efficiently modulated by electrically controlling the monolayer silicon-based device. The modulation depth reached 100% almost when the applied voltage was 7V at an external laser intensity of 0.6W/cm2. The saturation voltage reduced with the increase of the photo-excited intensity. In a THz continuous wave(CW)system, a significant fall in both THz transmission and reflection was also observed with the increase of applied voltage. This reduction in the THz transmission and reflection was induced by the absorption for electron injection. The results show that a high-efficiency and high modulation depth broadband electric-controlled terahertz modulator in a pure Si structure has been realized.</description><identifier>ISSN: 1674-862X</identifier><identifier>DOI: 10.3969/j.issn.1674-862X.2015.02.005</identifier><language>eng</language><subject>太赫兹波 ; 太赫兹脉冲 ; 振幅调制 ; 掺杂 ; 有源 ; 激光强度 ; 电光调制器 ; 电压降低</subject><ispartof>电子科技学刊, 2015, Vol.13 (2), p.113-116</ispartof><rights>Copyright © Wanfang Data Co. Ltd. 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The results show that a high-efficiency and high modulation depth broadband electric-controlled terahertz modulator in a pure Si structure has been realized.</description><subject>太赫兹波</subject><subject>太赫兹脉冲</subject><subject>振幅调制</subject><subject>掺杂</subject><subject>有源</subject><subject>激光强度</subject><subject>电光调制器</subject><subject>电压降低</subject><issn>1674-862X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNo9j89LwzAcxXNQcMz9D0W8eGjNjyZpLsKY8wdM9DDBW0mTb7rO2My0U9a_3srE04P3PrzHQ-iS4Iwpoa63WdN1bUaEzNNC0LeMYsIzTDOM-Qma_PtnaNZ1TYU5YUIKSSfo5mUT-pDehh3YZG765guSpQfTx8Zo7w_JIrR9DN6P8Rqi3kDsh-Qp2L3XfYjn6NRp38HsT6fo9W65Xjykq-f7x8V8lRrCCE-lzHUhAQQnhSaUE4lZpQw46xghDozCoKwhuQEhnJIVpYW2VgBoB045NkVXx95v3Trd1uU27GM7LpZDbYf3bQm_jzEd_47sxZE1m9DWn81I72LzoeOhFILTHBcFZT98AFwA</recordid><startdate>2015</startdate><enddate>2015</enddate><creator>Bo Zhang Liang Zhong Ting He Jing-Ling Shen</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope><scope>2B.</scope><scope>4A8</scope><scope>92I</scope><scope>93N</scope><scope>PSX</scope><scope>TCJ</scope></search><sort><creationdate>2015</creationdate><title>Photo-Doped Active Electrically Controlled Terahertz Modulator</title><author>Bo Zhang Liang Zhong Ting He Jing-Ling Shen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1315-774a87ee6518a1251703b9cefdf311fec90e9dc14ce66f97b228add6eeafef9f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>太赫兹波</topic><topic>太赫兹脉冲</topic><topic>振幅调制</topic><topic>掺杂</topic><topic>有源</topic><topic>激光强度</topic><topic>电光调制器</topic><topic>电压降低</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bo Zhang Liang Zhong Ting He Jing-Ling Shen</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>Wanfang Data Journals - Hong Kong</collection><collection>WANFANG Data Centre</collection><collection>Wanfang Data Journals</collection><collection>万方数据期刊 - 香港版</collection><collection>China Online Journals (COJ)</collection><collection>China Online Journals (COJ)</collection><jtitle>电子科技学刊</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bo Zhang Liang Zhong Ting He Jing-Ling Shen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photo-Doped Active Electrically Controlled Terahertz Modulator</atitle><jtitle>电子科技学刊</jtitle><addtitle>Journal of Electronic Science Technology</addtitle><date>2015</date><risdate>2015</risdate><volume>13</volume><issue>2</issue><spage>113</spage><epage>116</epage><pages>113-116</pages><issn>1674-862X</issn><abstract>We demonstrate an electric-controlled terahertz(THz) modulator which can be used to realize amplitude modulation of terahertz waves with slight photo-doping. The THz pulse transmission was efficiently modulated by electrically controlling the monolayer silicon-based device. The modulation depth reached 100% almost when the applied voltage was 7V at an external laser intensity of 0.6W/cm2. The saturation voltage reduced with the increase of the photo-excited intensity. In a THz continuous wave(CW)system, a significant fall in both THz transmission and reflection was also observed with the increase of applied voltage. This reduction in the THz transmission and reflection was induced by the absorption for electron injection. The results show that a high-efficiency and high modulation depth broadband electric-controlled terahertz modulator in a pure Si structure has been realized.</abstract><doi>10.3969/j.issn.1674-862X.2015.02.005</doi><tpages>4</tpages></addata></record> |
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subjects | 太赫兹波 太赫兹脉冲 振幅调制 掺杂 有源 激光强度 电光调制器 电压降低 |
title | Photo-Doped Active Electrically Controlled Terahertz Modulator |
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