Properties of doped ZnO transparent conductive thin films deposited by RF magnetron sputtering using a series of high quality ceramic targets
To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets（ZnO：Al,ZnO：（Al,Dy）,ZnO：（Al,Gd）,ZnO：（Al,Zr）,ZnO：（Al,Nb）,and ZnO：（Al,W）） were fabricated and used to deposit thin films onto glass substrates by radio frequency（RF） magnetron sputteri...
Gespeichert in:
| Veröffentlicht in: | Rare metals 2008-02, Vol.27 (1), p.32-35 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 35 |
|---|---|
| container_issue | 1 |
| container_start_page | 32 |
| container_title | Rare metals |
| container_volume | 27 |
| creator | LIN, Wei MA, Ruixin SHAO, Wei KANG, Bo WU, Zhongliang |
| description | To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets（ZnO：Al,ZnO：（Al,Dy）,ZnO：（Al,Gd）,ZnO：（Al,Zr）,ZnO：（Al,Nb）,and ZnO：（Al,W）） were fabricated and used to deposit thin films onto glass substrates by radio frequency（RF） magnetron sputtering.X-ray diffraction（XRD） analysis shows that the films are polycrystalline fitting well with hexagonal wurtzite structure and have a preferred orientation of the（002） plane.The transmittance of above 86% as well as the lowest resistivity of 8.43 × 10^-3 Ω·cm was obtained. |
| doi_str_mv | 10.1016/S1001-0521(08)60025-X |
| format | Article |
| fullrecord | <record><control><sourceid>wanfang_jour_proqu</sourceid><recordid>TN_cdi_wanfang_journals_xyjs_e200801008</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>26609825</cqvip_id><wanfj_id>xyjs_e200801008</wanfj_id><els_id>S100105210860025X</els_id><sourcerecordid>xyjs_e200801008</sourcerecordid><originalsourceid>FETCH-LOGICAL-c399t-79c396be94dd7c53cbab65420d1bad6f9fba64eac6d06ba16f7055f70a8dbfc43</originalsourceid><addsrcrecordid>eNqFkc1u1DAQgCMEEqXwCEgWB6CH0HESO8kJoaotSJVa8SNVXCzHnmS9JHbWdlr2IXhnvE05c5nxSN_MyPNl2WsKHyhQfvqNAtAcWEHfQ3PCAQqW3z7JjmjD67ymDXua3v-Q59mLELYAVcU5HGV_bryb0UeDgbie6FRo8tNek-ilDbP0aCNRzupFRXOHJG6MJb0Zp0A0zi6YmPhuT75ekEkOFqN3loR5iRG9sQNZwiFKElK5rtiYYUN2ixxN3BOFXk5GkSj9gDG8zJ71cgz46jEfZz8uzr-ffc6vri-_nH26ylXZtjGv25R5h22lda1YqTrZcVYVoGknNe_bvpO8Qqm4Bt5JyvsaGEtBNrrrVVUeZ-_WuffS9tIOYusWb9NG8Xu_DQILgAbSyZpEvl3J2bvdgiGKyQSF4ygtuiWIsmBtxco2gWwFlXcheOzF7M0k_V5QEAdN4kGTODgQ0IgHTeI29X1c-zD9986gF0EZtAq18aii0M78d8Kbx80bZ4ddurfopPqVJKEokuS2KVj5F9W3qU0</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>32594539</pqid></control><display><type>article</type><title>Properties of doped ZnO transparent conductive thin films deposited by RF magnetron sputtering using a series of high quality ceramic targets</title><source>Alma/SFX Local Collection</source><creator>LIN, Wei ; MA, Ruixin ; SHAO, Wei ; KANG, Bo ; WU, Zhongliang</creator><creatorcontrib>LIN, Wei ; MA, Ruixin ; SHAO, Wei ; KANG, Bo ; WU, Zhongliang</creatorcontrib><description>To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets（ZnO：Al,ZnO：（Al,Dy）,ZnO：（Al,Gd）,ZnO：（Al,Zr）,ZnO：（Al,Nb）,and ZnO：（Al,W）） were fabricated and used to deposit thin films onto glass substrates by radio frequency（RF） magnetron sputtering.X-ray diffraction（XRD） analysis shows that the films are polycrystalline fitting well with hexagonal wurtzite structure and have a preferred orientation of the（002） plane.The transmittance of above 86% as well as the lowest resistivity of 8.43 × 10^-3 Ω·cm was obtained.</description><identifier>ISSN: 1001-0521</identifier><identifier>EISSN: 1867-7185</identifier><identifier>DOI: 10.1016/S1001-0521(08)60025-X</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>electrical properties ; optical properties ; RF magnetron sputtering ; transparent conductive thin film ; ZnO ; 电磁材料 ; 磁控管</subject><ispartof>Rare metals, 2008-02, Vol.27 (1), p.32-35</ispartof><rights>2008 The Nonferrous Metals Society of China</rights><rights>Copyright © Wanfang Data Co. Ltd. All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c399t-79c396be94dd7c53cbab65420d1bad6f9fba64eac6d06ba16f7055f70a8dbfc43</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/85314X/85314X.jpg</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>LIN, Wei</creatorcontrib><creatorcontrib>MA, Ruixin</creatorcontrib><creatorcontrib>SHAO, Wei</creatorcontrib><creatorcontrib>KANG, Bo</creatorcontrib><creatorcontrib>WU, Zhongliang</creatorcontrib><title>Properties of doped ZnO transparent conductive thin films deposited by RF magnetron sputtering using a series of high quality ceramic targets</title><title>Rare metals</title><addtitle>Rare Metals</addtitle><description>To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets（ZnO：Al,ZnO：（Al,Dy）,ZnO：（Al,Gd）,ZnO：（Al,Zr）,ZnO：（Al,Nb）,and ZnO：（Al,W）） were fabricated and used to deposit thin films onto glass substrates by radio frequency（RF） magnetron sputtering.X-ray diffraction（XRD） analysis shows that the films are polycrystalline fitting well with hexagonal wurtzite structure and have a preferred orientation of the（002） plane.The transmittance of above 86% as well as the lowest resistivity of 8.43 × 10^-3 Ω·cm was obtained.</description><subject>electrical properties</subject><subject>optical properties</subject><subject>RF magnetron sputtering</subject><subject>transparent conductive thin film</subject><subject>ZnO</subject><subject>电磁材料</subject><subject>磁控管</subject><issn>1001-0521</issn><issn>1867-7185</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqFkc1u1DAQgCMEEqXwCEgWB6CH0HESO8kJoaotSJVa8SNVXCzHnmS9JHbWdlr2IXhnvE05c5nxSN_MyPNl2WsKHyhQfvqNAtAcWEHfQ3PCAQqW3z7JjmjD67ymDXua3v-Q59mLELYAVcU5HGV_bryb0UeDgbie6FRo8tNek-ilDbP0aCNRzupFRXOHJG6MJb0Zp0A0zi6YmPhuT75ekEkOFqN3loR5iRG9sQNZwiFKElK5rtiYYUN2ixxN3BOFXk5GkSj9gDG8zJ71cgz46jEfZz8uzr-ffc6vri-_nH26ylXZtjGv25R5h22lda1YqTrZcVYVoGknNe_bvpO8Qqm4Bt5JyvsaGEtBNrrrVVUeZ-_WuffS9tIOYusWb9NG8Xu_DQILgAbSyZpEvl3J2bvdgiGKyQSF4ygtuiWIsmBtxco2gWwFlXcheOzF7M0k_V5QEAdN4kGTODgQ0IgHTeI29X1c-zD9986gF0EZtAq18aii0M78d8Kbx80bZ4ddurfopPqVJKEokuS2KVj5F9W3qU0</recordid><startdate>20080201</startdate><enddate>20080201</enddate><creator>LIN, Wei</creator><creator>MA, Ruixin</creator><creator>SHAO, Wei</creator><creator>KANG, Bo</creator><creator>WU, Zhongliang</creator><general>Elsevier Ltd</general><general>Department of Nonferrous Metallurgy,University of Science and Technology Beijing,Beijing 100083,China</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>2B.</scope><scope>4A8</scope><scope>92I</scope><scope>93N</scope><scope>PSX</scope><scope>TCJ</scope></search><sort><creationdate>20080201</creationdate><title>Properties of doped ZnO transparent conductive thin films deposited by RF magnetron sputtering using a series of high quality ceramic targets</title><author>LIN, Wei ; MA, Ruixin ; SHAO, Wei ; KANG, Bo ; WU, Zhongliang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c399t-79c396be94dd7c53cbab65420d1bad6f9fba64eac6d06ba16f7055f70a8dbfc43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>electrical properties</topic><topic>optical properties</topic><topic>RF magnetron sputtering</topic><topic>transparent conductive thin film</topic><topic>ZnO</topic><topic>电磁材料</topic><topic>磁控管</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>LIN, Wei</creatorcontrib><creatorcontrib>MA, Ruixin</creatorcontrib><creatorcontrib>SHAO, Wei</creatorcontrib><creatorcontrib>KANG, Bo</creatorcontrib><creatorcontrib>WU, Zhongliang</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Wanfang Data Journals - Hong Kong</collection><collection>WANFANG Data Centre</collection><collection>Wanfang Data Journals</collection><collection>万方数据期刊 - 香港版</collection><collection>China Online Journals (COJ)</collection><collection>China Online Journals (COJ)</collection><jtitle>Rare metals</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>LIN, Wei</au><au>MA, Ruixin</au><au>SHAO, Wei</au><au>KANG, Bo</au><au>WU, Zhongliang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Properties of doped ZnO transparent conductive thin films deposited by RF magnetron sputtering using a series of high quality ceramic targets</atitle><jtitle>Rare metals</jtitle><addtitle>Rare Metals</addtitle><date>2008-02-01</date><risdate>2008</risdate><volume>27</volume><issue>1</issue><spage>32</spage><epage>35</epage><pages>32-35</pages><issn>1001-0521</issn><eissn>1867-7185</eissn><abstract>To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets（ZnO：Al,ZnO：（Al,Dy）,ZnO：（Al,Gd）,ZnO：（Al,Zr）,ZnO：（Al,Nb）,and ZnO：（Al,W）） were fabricated and used to deposit thin films onto glass substrates by radio frequency（RF） magnetron sputtering.X-ray diffraction（XRD） analysis shows that the films are polycrystalline fitting well with hexagonal wurtzite structure and have a preferred orientation of the（002） plane.The transmittance of above 86% as well as the lowest resistivity of 8.43 × 10^-3 Ω·cm was obtained.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/S1001-0521(08)60025-X</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1001-0521 |
| ispartof | Rare metals, 2008-02, Vol.27 (1), p.32-35 |
| issn | 1001-0521 1867-7185 |
| language | eng |
| recordid | cdi_wanfang_journals_xyjs_e200801008 |
| source | Alma/SFX Local Collection |
| subjects | electrical properties optical properties RF magnetron sputtering transparent conductive thin film ZnO 电磁材料 磁控管 |
| title | Properties of doped ZnO transparent conductive thin films deposited by RF magnetron sputtering using a series of high quality ceramic targets |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T03%3A53%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-wanfang_jour_proqu&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Properties%20of%20doped%20ZnO%20transparent%20conductive%20thin%20films%20deposited%20by%20RF%20magnetron%20sputtering%20using%20a%20series%20of%20high%20quality%20ceramic%20targets&rft.jtitle=Rare%20metals&rft.au=LIN,%20Wei&rft.date=2008-02-01&rft.volume=27&rft.issue=1&rft.spage=32&rft.epage=35&rft.pages=32-35&rft.issn=1001-0521&rft.eissn=1867-7185&rft_id=info:doi/10.1016/S1001-0521(08)60025-X&rft_dat=%3Cwanfang_jour_proqu%3Exyjs_e200801008%3C/wanfang_jour_proqu%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=32594539&rft_id=info:pmid/&rft_cqvip_id=26609825&rft_wanfj_id=xyjs_e200801008&rft_els_id=S100105210860025X&rfr_iscdi=true |