Annealing effects on the optical and electrochemical properties of tantalum pentoxide films

Tantalum pentoxide (Ta 2 O 5 ) has attracted intensive attention due to their excellent physicochemical properties. Ta 2 O 5 films were synthesized via electron beam evaporation (EBE) and subsequently annealed at different temperatures ranging from 300 to 900 °C. X-ray diffraction (XRD) results show...

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Veröffentlicht in:Journal of advanced ceramics 2021-08, Vol.10 (4), p.704-713
Hauptverfasser: Ren, Wei, Yang, Guang-Dao, Feng, Ai-Ling, Miao, Rui-Xia, Xia, Jun-Bo, Wang, Yong-Gang
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container_title Journal of advanced ceramics
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Yang, Guang-Dao
Feng, Ai-Ling
Miao, Rui-Xia
Xia, Jun-Bo
Wang, Yong-Gang
description Tantalum pentoxide (Ta 2 O 5 ) has attracted intensive attention due to their excellent physicochemical properties. Ta 2 O 5 films were synthesized via electron beam evaporation (EBE) and subsequently annealed at different temperatures ranging from 300 to 900 °C. X-ray diffraction (XRD) results show that amorphous Ta 2 O 5 thin films form from 300 to 700 °C and then a phase transition to polycrystalline β-Ta 2 O 5 films occurs since 900 °C. The surface morphology of the Ta 2 O 5 films is uniform and smooth. The resulted Ta 2 O 5 films exhibit excellent transmittance properties for wavelengths ranging from 300 to 1100 nm. The bandgap of the Ta 2 O 5 films is broadened from 4.32 to 4.46 eV by annealing. The 900 °C polycrystalline film electrode has improved electrochemical stability, compared to the other amorphous counterparts.
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Ta 2 O 5 films were synthesized via electron beam evaporation (EBE) and subsequently annealed at different temperatures ranging from 300 to 900 °C. X-ray diffraction (XRD) results show that amorphous Ta 2 O 5 thin films form from 300 to 700 °C and then a phase transition to polycrystalline β-Ta 2 O 5 films occurs since 900 °C. The surface morphology of the Ta 2 O 5 films is uniform and smooth. The resulted Ta 2 O 5 films exhibit excellent transmittance properties for wavelengths ranging from 300 to 1100 nm. The bandgap of the Ta 2 O 5 films is broadened from 4.32 to 4.46 eV by annealing. 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subjects Analysis
Annealing
Ceramics
Characterization and Evaluation of Materials
Chemical properties
Chemistry and Materials Science
Composites
Dielectric films
Diffraction
Electrochemical analysis
Electron beams
Glass
Materials Science
Morphology
Nanotechnology
Natural Materials
Optical properties
Phase transitions
Polycrystals
Research Article
Structural Materials
Tantalum
Tantalum oxides
Thin films
X-rays
title Annealing effects on the optical and electrochemical properties of tantalum pentoxide films
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