130 nm CMOS Multi-Stage Synthetic Transmission Line Based Amplifier Beyond 100 GHz

A 130 nm CMOS complementary-conducting-strip transmission line(CCS-TL)based multi-stage ampli-fier beyond 100 GHz was presented in this paper. Different structural parameters were investigated to achieve higher quality factor for the matching circuits. Moreover, CCS-TL based Marchand balun was imple...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Transactions of Tianjin University 2016-02, Vol.22 (1), p.1-6
1. Verfasser: 张明名 吴宪顺 李光福 王新 庄晴光
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 6
container_issue 1
container_start_page 1
container_title Transactions of Tianjin University
container_volume 22
creator 张明名 吴宪顺 李光福 王新 庄晴光
description A 130 nm CMOS complementary-conducting-strip transmission line(CCS-TL)based multi-stage ampli-fier beyond 100 GHz was presented in this paper. Different structural parameters were investigated to achieve higher quality factor for the matching circuits. Moreover, CCS-TL based Marchand balun was implemented to achieve higher output power. The measured small signal gain was higher than 5 dB from 101 GHz to 110 GHz. DC power consumption was 67.2 mW withVD=1.2 V, and the chip size including contact PADs was 1.12 mm×0.81 mm.
doi_str_mv 10.1007/s12209-016-2743-6
format Article
fullrecord <record><control><sourceid>wanfang_jour_cross</sourceid><recordid>TN_cdi_wanfang_journals_tianjdxxb_e201601001</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>668341820</cqvip_id><wanfj_id>tianjdxxb_e201601001</wanfj_id><sourcerecordid>tianjdxxb_e201601001</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2191-508e8b6ca35a98658233065753a625635fe814799997cfbbdeeeed4c63c50a1a3</originalsourceid><addsrcrecordid>eNp9kMFOAjEURSdGExH9AHeNa6uv7bTTLoEomEBIBNdNmelACXRwOkTw6y0Zojvfpm9xzzvNTZJ7Ak8EIHsOhFJQGIjANEsZFhdJhyjFsSRKXMYdQOBUSXqd3ISwBkgVZKSTvBMGyG_RYDKdocl-0zg8a8zSotnRNyvbuBzNa-PD1oXgKo_GzlvUN8EWqLfdbVzpbI369lj5AkUHGo6-b5Or0myCvTu_3eTj9WU-GOHxdPg26I1xTokimIO0ciFyw7hRUnBJGQPBM86MoFwwXlpJ0kzFyfJysShsnCLNBcs5GGJYN3ls734ZXxq_1OtqX_to1I0zfl0cDgttaWwE4sdIjJM2ntdVCLUt9a52W1MfNQF96lC3HepI6FOHWkSGtkyIWb-09Z_jP-jhLFpVfvkZuV-TEJKlRFJgP_5ofMI</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>130 nm CMOS Multi-Stage Synthetic Transmission Line Based Amplifier Beyond 100 GHz</title><source>SpringerLink Journals</source><source>Alma/SFX Local Collection</source><creator>张明名 吴宪顺 李光福 王新 庄晴光</creator><creatorcontrib>张明名 吴宪顺 李光福 王新 庄晴光</creatorcontrib><description>A 130 nm CMOS complementary-conducting-strip transmission line(CCS-TL)based multi-stage ampli-fier beyond 100 GHz was presented in this paper. Different structural parameters were investigated to achieve higher quality factor for the matching circuits. Moreover, CCS-TL based Marchand balun was implemented to achieve higher output power. The measured small signal gain was higher than 5 dB from 101 GHz to 110 GHz. DC power consumption was 67.2 mW withVD=1.2 V, and the chip size including contact PADs was 1.12 mm×0.81 mm.</description><identifier>ISSN: 1006-4982</identifier><identifier>EISSN: 1995-8196</identifier><identifier>DOI: 10.1007/s12209-016-2743-6</identifier><language>eng</language><publisher>Tianjin: Tianjin University</publisher><subject>CMOS ; Engineering ; GHz ; Humanities and Social Sciences ; Mechanical Engineering ; multidisciplinary ; Science ; 合成 ; 多级放大器 ; 小信号增益 ; 纳米 ; 线路放大器 ; 结构参数</subject><ispartof>Transactions of Tianjin University, 2016-02, Vol.22 (1), p.1-6</ispartof><rights>Tianjin University and Springer-Verlag Berlin Heidelberg 2016</rights><rights>Copyright © Wanfang Data Co. Ltd. All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c2191-508e8b6ca35a98658233065753a625635fe814799997cfbbdeeeed4c63c50a1a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/85460X/85460X.jpg</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s12209-016-2743-6$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s12209-016-2743-6$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>张明名 吴宪顺 李光福 王新 庄晴光</creatorcontrib><title>130 nm CMOS Multi-Stage Synthetic Transmission Line Based Amplifier Beyond 100 GHz</title><title>Transactions of Tianjin University</title><addtitle>Trans. Tianjin Univ</addtitle><addtitle>Transactions of Tianjin University</addtitle><description>A 130 nm CMOS complementary-conducting-strip transmission line(CCS-TL)based multi-stage ampli-fier beyond 100 GHz was presented in this paper. Different structural parameters were investigated to achieve higher quality factor for the matching circuits. Moreover, CCS-TL based Marchand balun was implemented to achieve higher output power. The measured small signal gain was higher than 5 dB from 101 GHz to 110 GHz. DC power consumption was 67.2 mW withVD=1.2 V, and the chip size including contact PADs was 1.12 mm×0.81 mm.</description><subject>CMOS</subject><subject>Engineering</subject><subject>GHz</subject><subject>Humanities and Social Sciences</subject><subject>Mechanical Engineering</subject><subject>multidisciplinary</subject><subject>Science</subject><subject>合成</subject><subject>多级放大器</subject><subject>小信号增益</subject><subject>纳米</subject><subject>线路放大器</subject><subject>结构参数</subject><issn>1006-4982</issn><issn>1995-8196</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp9kMFOAjEURSdGExH9AHeNa6uv7bTTLoEomEBIBNdNmelACXRwOkTw6y0Zojvfpm9xzzvNTZJ7Ak8EIHsOhFJQGIjANEsZFhdJhyjFsSRKXMYdQOBUSXqd3ISwBkgVZKSTvBMGyG_RYDKdocl-0zg8a8zSotnRNyvbuBzNa-PD1oXgKo_GzlvUN8EWqLfdbVzpbI369lj5AkUHGo6-b5Or0myCvTu_3eTj9WU-GOHxdPg26I1xTokimIO0ciFyw7hRUnBJGQPBM86MoFwwXlpJ0kzFyfJysShsnCLNBcs5GGJYN3ls734ZXxq_1OtqX_to1I0zfl0cDgttaWwE4sdIjJM2ntdVCLUt9a52W1MfNQF96lC3HepI6FOHWkSGtkyIWb-09Z_jP-jhLFpVfvkZuV-TEJKlRFJgP_5ofMI</recordid><startdate>20160201</startdate><enddate>20160201</enddate><creator>张明名 吴宪顺 李光福 王新 庄晴光</creator><general>Tianjin University</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>2B.</scope><scope>4A8</scope><scope>92I</scope><scope>93N</scope><scope>PSX</scope><scope>TCJ</scope></search><sort><creationdate>20160201</creationdate><title>130 nm CMOS Multi-Stage Synthetic Transmission Line Based Amplifier Beyond 100 GHz</title><author>张明名 吴宪顺 李光福 王新 庄晴光</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2191-508e8b6ca35a98658233065753a625635fe814799997cfbbdeeeed4c63c50a1a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>CMOS</topic><topic>Engineering</topic><topic>GHz</topic><topic>Humanities and Social Sciences</topic><topic>Mechanical Engineering</topic><topic>multidisciplinary</topic><topic>Science</topic><topic>合成</topic><topic>多级放大器</topic><topic>小信号增益</topic><topic>纳米</topic><topic>线路放大器</topic><topic>结构参数</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>张明名 吴宪顺 李光福 王新 庄晴光</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>Wanfang Data Journals - Hong Kong</collection><collection>WANFANG Data Centre</collection><collection>Wanfang Data Journals</collection><collection>万方数据期刊 - 香港版</collection><collection>China Online Journals (COJ)</collection><collection>China Online Journals (COJ)</collection><jtitle>Transactions of Tianjin University</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>张明名 吴宪顺 李光福 王新 庄晴光</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>130 nm CMOS Multi-Stage Synthetic Transmission Line Based Amplifier Beyond 100 GHz</atitle><jtitle>Transactions of Tianjin University</jtitle><stitle>Trans. Tianjin Univ</stitle><addtitle>Transactions of Tianjin University</addtitle><date>2016-02-01</date><risdate>2016</risdate><volume>22</volume><issue>1</issue><spage>1</spage><epage>6</epage><pages>1-6</pages><issn>1006-4982</issn><eissn>1995-8196</eissn><abstract>A 130 nm CMOS complementary-conducting-strip transmission line(CCS-TL)based multi-stage ampli-fier beyond 100 GHz was presented in this paper. Different structural parameters were investigated to achieve higher quality factor for the matching circuits. Moreover, CCS-TL based Marchand balun was implemented to achieve higher output power. The measured small signal gain was higher than 5 dB from 101 GHz to 110 GHz. DC power consumption was 67.2 mW withVD=1.2 V, and the chip size including contact PADs was 1.12 mm×0.81 mm.</abstract><cop>Tianjin</cop><pub>Tianjin University</pub><doi>10.1007/s12209-016-2743-6</doi><tpages>6</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1006-4982
ispartof Transactions of Tianjin University, 2016-02, Vol.22 (1), p.1-6
issn 1006-4982
1995-8196
language eng
recordid cdi_wanfang_journals_tianjdxxb_e201601001
source SpringerLink Journals; Alma/SFX Local Collection
subjects CMOS
Engineering
GHz
Humanities and Social Sciences
Mechanical Engineering
multidisciplinary
Science
合成
多级放大器
小信号增益
纳米
线路放大器
结构参数
title 130 nm CMOS Multi-Stage Synthetic Transmission Line Based Amplifier Beyond 100 GHz
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T14%3A53%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-wanfang_jour_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=130%20nm%20CMOS%20Multi-Stage%20Synthetic%20Transmission%20Line%20Based%20Amplifier%20Beyond%20100%20GHz&rft.jtitle=Transactions%20of%20Tianjin%20University&rft.au=%E5%BC%A0%E6%98%8E%E5%90%8D%20%E5%90%B4%E5%AE%AA%E9%A1%BA%20%E6%9D%8E%E5%85%89%E7%A6%8F%20%E7%8E%8B%E6%96%B0%20%E5%BA%84%E6%99%B4%E5%85%89&rft.date=2016-02-01&rft.volume=22&rft.issue=1&rft.spage=1&rft.epage=6&rft.pages=1-6&rft.issn=1006-4982&rft.eissn=1995-8196&rft_id=info:doi/10.1007/s12209-016-2743-6&rft_dat=%3Cwanfang_jour_cross%3Etianjdxxb_e201601001%3C/wanfang_jour_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_cqvip_id=668341820&rft_wanfj_id=tianjdxxb_e201601001&rfr_iscdi=true