Molecular Dynamics of Nanometric Processing of Ion Implanted Monocrystalline Silicon Surfaces

Three-dimensional molecular dynamics simulations are carried out to study the mechanism of nanometric processing of ion implanted monocrystalline silicon surfaces. Lattice transformation is observed during implantation and nano-indentation using radial distribution function and geometric criterion d...

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Veröffentlicht in:	Transactions of Tianjin University 2014, Vol.20 (3), p.203-209
1. Verfasser:	陈耘辉房丰洲张效栋胡小唐
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Sprache:	eng
Schlagworte:	Engineering Humanities and Social Sciences Mechanical Engineering multidisciplinary Science 分子动力学模拟单晶硅表面径向分布函数损伤检测离子注入纳米加工纳米压痕纳米处理
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creator	陈耘辉房丰洲张效栋胡小唐
description	Three-dimensional molecular dynamics simulations are carried out to study the mechanism of nanometric processing of ion implanted monocrystalline silicon surfaces. Lattice transformation is observed during implantation and nano-indentation using radial distribution function and geometric criterion damage detection. Nano-indentation is simulated to study the changes of mechanical property. Implantation analysis shows the existence of amorphous phase. Indentation process shows the lattice evolution, which is beneficial for reducing fractures during processing. The indentation results reveal the reduction of brittleness and hardness of the implanted surface. The ion fluence is in direct proportion to the damage, and inverse to the hardness of the material. Experiments of ion implar, tation, nanoindentation, nano-scratching and nanometric cutting were carried out to verify the simulation results.
doi_str_mv	10.1007/s12209-014-2336-1
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Tianjin Univ</addtitle><addtitle>Transactions of Tianjin University</addtitle><description>Three-dimensional molecular dynamics simulations are carried out to study the mechanism of nanometric processing of ion implanted monocrystalline silicon surfaces. Lattice transformation is observed during implantation and nano-indentation using radial distribution function and geometric criterion damage detection. Nano-indentation is simulated to study the changes of mechanical property. Implantation analysis shows the existence of amorphous phase. Indentation process shows the lattice evolution, which is beneficial for reducing fractures during processing. The indentation results reveal the reduction of brittleness and hardness of the implanted surface. The ion fluence is in direct proportion to the damage, and inverse to the hardness of the material. 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Tianjin Univ</stitle><addtitle>Transactions of Tianjin University</addtitle><date>2014</date><risdate>2014</risdate><volume>20</volume><issue>3</issue><spage>203</spage><epage>209</epage><pages>203-209</pages><issn>1006-4982</issn><eissn>1995-8196</eissn><abstract>Three-dimensional molecular dynamics simulations are carried out to study the mechanism of nanometric processing of ion implanted monocrystalline silicon surfaces. Lattice transformation is observed during implantation and nano-indentation using radial distribution function and geometric criterion damage detection. Nano-indentation is simulated to study the changes of mechanical property. Implantation analysis shows the existence of amorphous phase. Indentation process shows the lattice evolution, which is beneficial for reducing fractures during processing. The indentation results reveal the reduction of brittleness and hardness of the implanted surface. 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subjects	Engineering Humanities and Social Sciences Mechanical Engineering multidisciplinary Science 分子动力学模拟单晶硅表面径向分布函数损伤检测离子注入纳米加工纳米压痕纳米处理
title	Molecular Dynamics of Nanometric Processing of Ion Implanted Monocrystalline Silicon Surfaces
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