基于响应面法的单晶硅CMP抛光工艺参数优化

基于响应面法的单晶硅CMP抛光工艺参数优化

TG58%TG73; 为提高单晶硅化学机械抛光(chemical mechanical polishing,CMP)的表面质量和抛光速度,通过响应面法优化CMP抛光压力、抛光盘转速和抛光液流量3个工艺参数,结果表明抛光压力、抛光盘转速、抛光液流量对材料去除率和抛光后表面粗糙度的影响依次减小.通过数学模型和试验验证获得最优的工艺参数为:抛光压力,48.3kPa;抛光盘转速,70r/min;抛光液流量,65mL/min.在此工艺下,单晶硅CMP的材料去除率为1 058.2 nm/min,表面粗糙度为0.771 nm,其抛光速度和表面质量得到显著提高....

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Veröffentlicht in:金刚石与磨料磨具工程 2022-12, Vol.42 (6), p.745-752
Hauptverfasser: 卞达, 宋恩敏, 倪自丰, 钱善华, 赵永武
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container_end_page 752
container_issue 6
container_start_page 745
container_title 金刚石与磨料磨具工程
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creator 卞达
宋恩敏
倪自丰
钱善华
赵永武
description TG58%TG73; 为提高单晶硅化学机械抛光(chemical mechanical polishing,CMP)的表面质量和抛光速度,通过响应面法优化CMP抛光压力、抛光盘转速和抛光液流量3个工艺参数,结果表明抛光压力、抛光盘转速、抛光液流量对材料去除率和抛光后表面粗糙度的影响依次减小.通过数学模型和试验验证获得最优的工艺参数为:抛光压力,48.3kPa;抛光盘转速,70r/min;抛光液流量,65mL/min.在此工艺下,单晶硅CMP的材料去除率为1 058.2 nm/min,表面粗糙度为0.771 nm,其抛光速度和表面质量得到显著提高.
doi_str_mv 10.13394/j.cnki.jgszz.2022.0081
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title 基于响应面法的单晶硅CMP抛光工艺参数优化
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