Research on total-dose irradiation effect of hardened partially-depleted NMOSFET/SIMOX
In this work, top and back gate characteristics of partially-depleted NMOS transistors with enclosed gate fabricated on SIMOX which is hardened by silicon ions implantation were studied under X-ray total-dose irradiation of three bias conditions. It has been found experimentally that back gate thres...
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| Veröffentlicht in: | Nuclear science and techniques 2005-10, Vol.16 (5), p.260-265 |
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| container_title | Nuclear science and techniques |
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| creator | QIAN Cong ZHANG En-Xia ZHANG Zheng-Xuan ZHANG Feng LIN Cheng-Lu WANG Ying-Min WANG Xiao-He ZHAO Gui-Ru EN Yun-Fei LUO Hong-Wei SHI Qian |
| description | In this work, top and back gate characteristics of partially-depleted NMOS transistors with enclosed gate fabricated on SIMOX which is hardened by silicon ions implantation were studied under X-ray total-dose irradiation of three bias conditions. It has been found experimentally that back gate threshold shift and leakage current were greatly reduced during irradiation for hardened transistors, comparing to control ones. It has been confirmed that the improvement of total-dose properties of SOI devices is attributed to the silicon nanocrystals （nanoclusters） in buried oxides introduced by ion implantation. |
| format | Article |
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It has been found experimentally that back gate threshold shift and leakage current were greatly reduced during irradiation for hardened transistors, comparing to control ones. It has been confirmed that the improvement of total-dose properties of SOI devices is attributed to the silicon nanocrystals （nanoclusters） in buried oxides introduced by ion implantation.</description><identifier>ISSN: 1001-8042</identifier><language>eng</language><subject>NMOS ; SOI ; 放射性 ; 晶体管 ; 硅</subject><ispartof>Nuclear science and techniques, 2005-10, Vol.16 (5), p.260-265</ispartof><rights>Copyright © Wanfang Data Co. Ltd. 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It has been found experimentally that back gate threshold shift and leakage current were greatly reduced during irradiation for hardened transistors, comparing to control ones. It has been confirmed that the improvement of total-dose properties of SOI devices is attributed to the silicon nanocrystals （nanoclusters） in buried oxides introduced by ion implantation.</description><subject>NMOS</subject><subject>SOI</subject><subject>放射性</subject><subject>晶体管</subject><subject>硅</subject><issn>1001-8042</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNotjV9LwzAUxfug4Jx-h-CDb8XbNF2TRxn-GWwWnIpv5Sa5WTtLM9OI7NsbmFw4F875cc5ZNisAilyC4BfZ5TTtAYRYVGqWfbzSRBhMx_zIoo845NZPxPoQ0PYY-2STc2Qi8451GCyNZNkBQ-xxGI65pcNAMVkvm2b7-PB2t11tms-r7NzhMNH1_59n7ylbPufr5mm1vF_npuCSJ9XSWkQhLdS1VMo41FrpkisLUjkO6KQyJdhKWSUcSG051gqhJpLFopxnt6feXxwdjrt273_CmBbbbj-1xAGqdMATeHMCTefH3XefUI3my_UDtRzKWqT98g8NX1hZ</recordid><startdate>200510</startdate><enddate>200510</enddate><creator>QIAN Cong ZHANG En-Xia ZHANG Zheng-Xuan ZHANG Feng LIN Cheng-Lu WANG Ying-Min WANG Xiao-He ZHAO Gui-Ru EN Yun-Fei LUO Hong-Wei SHI Qian</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope><scope>2B.</scope><scope>4A8</scope><scope>92I</scope><scope>93N</scope><scope>PSX</scope><scope>TCJ</scope></search><sort><creationdate>200510</creationdate><title>Research on total-dose irradiation effect of hardened partially-depleted NMOSFET/SIMOX</title><author>QIAN Cong ZHANG En-Xia ZHANG Zheng-Xuan ZHANG Feng LIN Cheng-Lu WANG Ying-Min WANG Xiao-He ZHAO Gui-Ru EN Yun-Fei LUO Hong-Wei SHI Qian</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1282-c1b8ddaa48d077899cfabb9b329d089f20af89c30d59d94f08bd2a79a07ee8163</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>NMOS</topic><topic>SOI</topic><topic>放射性</topic><topic>晶体管</topic><topic>硅</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>QIAN Cong ZHANG En-Xia ZHANG Zheng-Xuan ZHANG Feng LIN Cheng-Lu WANG Ying-Min WANG Xiao-He ZHAO Gui-Ru EN Yun-Fei LUO Hong-Wei SHI Qian</creatorcontrib><collection>维普_期刊</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>维普中文期刊数据库</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>Wanfang Data Journals - Hong Kong</collection><collection>WANFANG Data Centre</collection><collection>Wanfang Data Journals</collection><collection>万方数据期刊 - 香港版</collection><collection>China Online Journals (COJ)</collection><collection>China Online Journals (COJ)</collection><jtitle>Nuclear science and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>QIAN Cong ZHANG En-Xia ZHANG Zheng-Xuan ZHANG Feng LIN Cheng-Lu WANG Ying-Min WANG Xiao-He ZHAO Gui-Ru EN Yun-Fei LUO Hong-Wei SHI Qian</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Research on total-dose irradiation effect of hardened partially-depleted NMOSFET/SIMOX</atitle><jtitle>Nuclear science and techniques</jtitle><addtitle>Nuclear Science and Techniques</addtitle><date>2005-10</date><risdate>2005</risdate><volume>16</volume><issue>5</issue><spage>260</spage><epage>265</epage><pages>260-265</pages><issn>1001-8042</issn><abstract>In this work, top and back gate characteristics of partially-depleted NMOS transistors with enclosed gate fabricated on SIMOX which is hardened by silicon ions implantation were studied under X-ray total-dose irradiation of three bias conditions. It has been found experimentally that back gate threshold shift and leakage current were greatly reduced during irradiation for hardened transistors, comparing to control ones. It has been confirmed that the improvement of total-dose properties of SOI devices is attributed to the silicon nanocrystals （nanoclusters） in buried oxides introduced by ion implantation.</abstract><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1001-8042 |
| ispartof | Nuclear science and techniques, 2005-10, Vol.16 (5), p.260-265 |
| issn | 1001-8042 |
| language | eng |
| recordid | cdi_wanfang_journals_hjs_e200505002 |
| source | Alma/SFX Local Collection; EZB Electronic Journals Library |
| subjects | NMOS SOI 放射性 晶体管 硅 |
| title | Research on total-dose irradiation effect of hardened partially-depleted NMOSFET/SIMOX |
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