Rugged and fast power MOSFET and IGBT

Rugged and fast power MOSFET and IGBT

A power semiconductor device includes a substrate having an upper surface and a lower surface. A source region of first conductivity is formed within a well region of second conductivity. The source region is provided proximate to the upper surface of the substrate. The well region has a non-polygon...

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Hauptverfasser: Tsukanov, Vladimir, Zommer, Nathan
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Zommer, Nathan
description A power semiconductor device includes a substrate having an upper surface and a lower surface. A source region of first conductivity is formed within a well region of second conductivity. The source region is provided proximate to the upper surface of the substrate. The well region has a non-polygon design. A gate electrode overlies the upper surface of the substrate. A drain electrode is provided proximate to the lower surface of the substrate.
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title Rugged and fast power MOSFET and IGBT
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