Process flow with pre-biased mask and wet etching for smooth sidewalls in silicon nitride waveguides

Aspects of the present disclosure are directed to process flow to fabricate a waveguide structure with a silicon nitride core having atomic-level smooth sidewalls achieved by wet etching instead of the conventional dry etching process. A mask is pre-biased to account for lateral etching during the w...

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Bibliographische Detailangaben
1. Verfasser: Anello Photonics, Inc
Format: Patent
Sprache:eng
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