H-3 silicon carbide PN-type radioisotopic battery and manufacturing method of the same
2 2 The present invention discloses an H-3 silicon carbide PN-type radioisotopic battery and a manufacturing method therefor. The radioisotopic battery has a structure including, from bottom to top, an N-type ohmic contact electrode, an N-type highly doped SiC substrate, an N-type SiC epitaxial laye...
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| Sprache: | eng |
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