Image sensor and method of controlling image sensor
An image sensor is disclosed. A first thin-film transistor includes a first gate and a second gate. The first gate is supplied with a signal generated by a photoelectric conversion element. The second gate is supplied with a potential different from a potential of a first signal line by a predetermi...
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| description | An image sensor is disclosed. A first thin-film transistor includes a first gate and a second gate. The first gate is supplied with a signal generated by a photoelectric conversion element. The second gate is supplied with a potential different from a potential of a first signal line by a predetermined voltage through a second signal line. The second gate has a smaller capacitance than the first gate. A second thin-film transistor supplies a reset potential received from a reset power line to the photoelectric conversion element. Whether a third thin-film transistor is in a conductive state is controlled by a selection signal. The third thin-film transistor is disposed between the first signal line and the first thin-film transistor and the current from a constant current source flows into the first thin-film transistor via the third thin-film transistor in a conductive state. |
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| fullrecord | <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_11715745</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>11715745</sourcerecordid><originalsourceid>FETCH-uspatents_grants_117157453</originalsourceid><addsrcrecordid>eNrjZDD2zE1MT1UoTs0rzi9SSMxLUchNLcnIT1HIT1NIzs8rKcrPycnMS1fIRFLGw8CalphTnMoLpbkZFNxcQ5w9dEuLCxJLUvNKiuPTixJBlKGhuaGpuYmpMRFKALx7LTQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Image sensor and method of controlling image sensor</title><source>USPTO Issued Patents</source><creator>TIANMA JAPAN, LTD</creator><creatorcontrib>TIANMA JAPAN, LTD</creatorcontrib><description>An image sensor is disclosed. A first thin-film transistor includes a first gate and a second gate. The first gate is supplied with a signal generated by a photoelectric conversion element. The second gate is supplied with a potential different from a potential of a first signal line by a predetermined voltage through a second signal line. The second gate has a smaller capacitance than the first gate. A second thin-film transistor supplies a reset potential received from a reset power line to the photoelectric conversion element. Whether a third thin-film transistor is in a conductive state is controlled by a selection signal. The third thin-film transistor is disposed between the first signal line and the first thin-film transistor and the current from a constant current source flows into the first thin-film transistor via the third thin-film transistor in a conductive state.</description><language>eng</language><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/11715745$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64039</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/11715745$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TIANMA JAPAN, LTD</creatorcontrib><title>Image sensor and method of controlling image sensor</title><description>An image sensor is disclosed. A first thin-film transistor includes a first gate and a second gate. The first gate is supplied with a signal generated by a photoelectric conversion element. The second gate is supplied with a potential different from a potential of a first signal line by a predetermined voltage through a second signal line. The second gate has a smaller capacitance than the first gate. A second thin-film transistor supplies a reset potential received from a reset power line to the photoelectric conversion element. Whether a third thin-film transistor is in a conductive state is controlled by a selection signal. The third thin-film transistor is disposed between the first signal line and the first thin-film transistor and the current from a constant current source flows into the first thin-film transistor via the third thin-film transistor in a conductive state.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZDD2zE1MT1UoTs0rzi9SSMxLUchNLcnIT1HIT1NIzs8rKcrPycnMS1fIRFLGw8CalphTnMoLpbkZFNxcQ5w9dEuLCxJLUvNKiuPTixJBlKGhuaGpuYmpMRFKALx7LTQ</recordid><startdate>20230801</startdate><enddate>20230801</enddate><creator>TIANMA JAPAN, LTD</creator><scope>EFH</scope></search><sort><creationdate>20230801</creationdate><title>Image sensor and method of controlling image sensor</title></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_117157453</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><toplevel>online_resources</toplevel><creatorcontrib>TIANMA JAPAN, LTD</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><aucorp>TIANMA JAPAN, LTD</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Image sensor and method of controlling image sensor</title><date>2023-08-01</date><risdate>2023</risdate><abstract>An image sensor is disclosed. A first thin-film transistor includes a first gate and a second gate. The first gate is supplied with a signal generated by a photoelectric conversion element. The second gate is supplied with a potential different from a potential of a first signal line by a predetermined voltage through a second signal line. The second gate has a smaller capacitance than the first gate. A second thin-film transistor supplies a reset potential received from a reset power line to the photoelectric conversion element. Whether a third thin-film transistor is in a conductive state is controlled by a selection signal. The third thin-film transistor is disposed between the first signal line and the first thin-film transistor and the current from a constant current source flows into the first thin-film transistor via the third thin-film transistor in a conductive state.</abstract><oa>free_for_read</oa></addata></record> |
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| title | Image sensor and method of controlling image sensor |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T15%3A35%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.aucorp=TIANMA%20JAPAN,%20LTD&rft.date=2023-08-01&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E11715745%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |