SRAM bitcell data retention control for leakage optimization

SRAM bitcell data retention control for leakage optimization

An integrated circuit includes a static random access memory (SRAM) array coupled to a first voltage supply node and a second voltage supply node. The first and second voltage supply nodes provide a retention voltage across the SRAM array. A current limiter is disposed between the SRAM array and the...

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Hauptverfasser: Tang, Yukit, Hsu, Kuoyuan
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creator Tang, Yukit
Hsu, Kuoyuan
description An integrated circuit includes a static random access memory (SRAM) array coupled to a first voltage supply node and a second voltage supply node. The first and second voltage supply nodes provide a retention voltage across the SRAM array. A current limiter is disposed between the SRAM array and the first voltage supply node, and a voltage regulator is coupled in parallel with the current limiter between the SRAM array and the first voltage supply node. The voltage regulator is configured to maintain the retention voltage across the SRAM array above a predetermined level.
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The first and second voltage supply nodes provide a retention voltage across the SRAM array. A current limiter is disposed between the SRAM array and the first voltage supply node, and a voltage regulator is coupled in parallel with the current limiter between the SRAM array and the first voltage supply node. The voltage regulator is configured to maintain the retention voltage across the SRAM array above a predetermined level.</abstract><oa>free_for_read</oa></addata></record>
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title SRAM bitcell data retention control for leakage optimization
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