Semiconductor memory device

A semiconductor memory device includes a plurality of memory cell mats each comprising a plurality of normal memory cell arrays; and a redundancy memory cell array configured to replace a defective memory cell with a plurality of redundancy memory cells corresponding to a redundancy word line when t...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: Kyung, Ki-Myung
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Kyung, Ki-Myung
description A semiconductor memory device includes a plurality of memory cell mats each comprising a plurality of normal memory cell arrays; and a redundancy memory cell array configured to replace a defective memory cell with a plurality of redundancy memory cells corresponding to a redundancy word line when the redundancy word line corresponding to one or more redundancy memory cell arrays is activated in response to an address corresponding to the defective memory cell among the plurality of normal memory cell arrays.
format Patent
fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_08345494</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>08345494</sourcerecordid><originalsourceid>FETCH-uspatents_grants_083454943</originalsourceid><addsrcrecordid>eNrjZJAOTs3NTM7PSylNLskvUshNzc0vqlRISS3LTE7lYWBNS8wpTuWF0twMCm6uIc4euqXFBYklqXklxfHpRYkgysDC2MTUxNLEmAglAHu1JKI</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor memory device</title><source>USPTO Issued Patents</source><creator>Kyung, Ki-Myung</creator><creatorcontrib>Kyung, Ki-Myung ; Hynix Semiconductor Inc</creatorcontrib><description>A semiconductor memory device includes a plurality of memory cell mats each comprising a plurality of normal memory cell arrays; and a redundancy memory cell array configured to replace a defective memory cell with a plurality of redundancy memory cells corresponding to a redundancy word line when the redundancy word line corresponding to one or more redundancy memory cell arrays is activated in response to an address corresponding to the defective memory cell among the plurality of normal memory cell arrays.</description><language>eng</language><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8345494$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64039</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8345494$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kyung, Ki-Myung</creatorcontrib><creatorcontrib>Hynix Semiconductor Inc</creatorcontrib><title>Semiconductor memory device</title><description>A semiconductor memory device includes a plurality of memory cell mats each comprising a plurality of normal memory cell arrays; and a redundancy memory cell array configured to replace a defective memory cell with a plurality of redundancy memory cells corresponding to a redundancy word line when the redundancy word line corresponding to one or more redundancy memory cell arrays is activated in response to an address corresponding to the defective memory cell among the plurality of normal memory cell arrays.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZJAOTs3NTM7PSylNLskvUshNzc0vqlRISS3LTE7lYWBNS8wpTuWF0twMCm6uIc4euqXFBYklqXklxfHpRYkgysDC2MTUxNLEmAglAHu1JKI</recordid><startdate>20130101</startdate><enddate>20130101</enddate><creator>Kyung, Ki-Myung</creator><scope>EFH</scope></search><sort><creationdate>20130101</creationdate><title>Semiconductor memory device</title><author>Kyung, Ki-Myung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_083454943</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Kyung, Ki-Myung</creatorcontrib><creatorcontrib>Hynix Semiconductor Inc</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kyung, Ki-Myung</au><aucorp>Hynix Semiconductor Inc</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor memory device</title><date>2013-01-01</date><risdate>2013</risdate><abstract>A semiconductor memory device includes a plurality of memory cell mats each comprising a plurality of normal memory cell arrays; and a redundancy memory cell array configured to replace a defective memory cell with a plurality of redundancy memory cells corresponding to a redundancy word line when the redundancy word line corresponding to one or more redundancy memory cell arrays is activated in response to an address corresponding to the defective memory cell among the plurality of normal memory cell arrays.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_uspatents_grants_08345494
source USPTO Issued Patents
title Semiconductor memory device
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T02%3A20%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Kyung,%20Ki-Myung&rft.aucorp=Hynix%20Semiconductor%20Inc&rft.date=2013-01-01&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E08345494%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true