Non-volatile memory with split write and read bitlines

Read and write operations of a non-volatile memory (NVM) bitcell have different optimum parameters resulting in a conflict during design of the NVM bitcell. A single bitline in the NVM bitcell prevents optimum read performance. Read performance may be improved by splitting the read path and the writ...

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Bibliographische Detailangaben
1. Verfasser: Terzioglu, Esin
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
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