Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus

A solid-state imaging device includes a pixel section including light receiving sensors, horizontally spaced vertical transfer registers including vertical transfer channel regions and vertical transfer electrodes formed above the vertical transfer channel regions, vertically spaced horizontal trans...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: Kanbe, Hideo
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Kanbe, Hideo
description A solid-state imaging device includes a pixel section including light receiving sensors, horizontally spaced vertical transfer registers including vertical transfer channel regions and vertical transfer electrodes formed above the vertical transfer channel regions, vertically spaced horizontal transfer registers each including a horizontal transfer channel region and horizontal transfer electrodes formed side by side in a horizontal direction above the horizontal transfer channel region and formed in the same layer as the vertical transfer electrodes, and a horizontal-to-horizontal transfer portion formed between adjacent two of the horizontal transfer registers and including a horizontal-to-horizontal transfer channel region interconnecting respective parts of the horizontal transfer channel regions positioned under the horizontal transfer electrodes to which the transfer drive pulses having different phases are applied, and a horizontal-to-horizontal transfer electrode formed above the horizontal-to-horizontal transfer channel region in the same layer as both the vertical transfer electrodes and the horizontal transfer electrodes.
format Patent
fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_08319877</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>08319877</sourcerecordid><originalsourceid>FETCH-uspatents_grants_083198773</originalsourceid><addsrcrecordid>eNqNjDsOwjAQBd1QoMAd9gBEAqVIqBEoPfRoZa8dS_7Ju-b8EIkaUU3x5s1WLfccvOlZUAh8ROeTA0Mvr-kAkWTJBrKFiKlZ1NLquvOPDyYDFEhLzclrwFKwojTeqY3FwLT_slNwuz4uc9-4fDpJ-OkqrjhOw-k8jePwh_IGnbRBSw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus</title><source>USPTO Issued Patents</source><creator>Kanbe, Hideo</creator><creatorcontrib>Kanbe, Hideo ; Sony Corporation</creatorcontrib><description>A solid-state imaging device includes a pixel section including light receiving sensors, horizontally spaced vertical transfer registers including vertical transfer channel regions and vertical transfer electrodes formed above the vertical transfer channel regions, vertically spaced horizontal transfer registers each including a horizontal transfer channel region and horizontal transfer electrodes formed side by side in a horizontal direction above the horizontal transfer channel region and formed in the same layer as the vertical transfer electrodes, and a horizontal-to-horizontal transfer portion formed between adjacent two of the horizontal transfer registers and including a horizontal-to-horizontal transfer channel region interconnecting respective parts of the horizontal transfer channel regions positioned under the horizontal transfer electrodes to which the transfer drive pulses having different phases are applied, and a horizontal-to-horizontal transfer electrode formed above the horizontal-to-horizontal transfer channel region in the same layer as both the vertical transfer electrodes and the horizontal transfer electrodes.</description><language>eng</language><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8319877$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64038</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8319877$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kanbe, Hideo</creatorcontrib><creatorcontrib>Sony Corporation</creatorcontrib><title>Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus</title><description>A solid-state imaging device includes a pixel section including light receiving sensors, horizontally spaced vertical transfer registers including vertical transfer channel regions and vertical transfer electrodes formed above the vertical transfer channel regions, vertically spaced horizontal transfer registers each including a horizontal transfer channel region and horizontal transfer electrodes formed side by side in a horizontal direction above the horizontal transfer channel region and formed in the same layer as the vertical transfer electrodes, and a horizontal-to-horizontal transfer portion formed between adjacent two of the horizontal transfer registers and including a horizontal-to-horizontal transfer channel region interconnecting respective parts of the horizontal transfer channel regions positioned under the horizontal transfer electrodes to which the transfer drive pulses having different phases are applied, and a horizontal-to-horizontal transfer electrode formed above the horizontal-to-horizontal transfer channel region in the same layer as both the vertical transfer electrodes and the horizontal transfer electrodes.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNqNjDsOwjAQBd1QoMAd9gBEAqVIqBEoPfRoZa8dS_7Ju-b8EIkaUU3x5s1WLfccvOlZUAh8ROeTA0Mvr-kAkWTJBrKFiKlZ1NLquvOPDyYDFEhLzclrwFKwojTeqY3FwLT_slNwuz4uc9-4fDpJ-OkqrjhOw-k8jePwh_IGnbRBSw</recordid><startdate>20121127</startdate><enddate>20121127</enddate><creator>Kanbe, Hideo</creator><scope>EFH</scope></search><sort><creationdate>20121127</creationdate><title>Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus</title><author>Kanbe, Hideo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_083198773</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Kanbe, Hideo</creatorcontrib><creatorcontrib>Sony Corporation</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kanbe, Hideo</au><aucorp>Sony Corporation</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus</title><date>2012-11-27</date><risdate>2012</risdate><abstract>A solid-state imaging device includes a pixel section including light receiving sensors, horizontally spaced vertical transfer registers including vertical transfer channel regions and vertical transfer electrodes formed above the vertical transfer channel regions, vertically spaced horizontal transfer registers each including a horizontal transfer channel region and horizontal transfer electrodes formed side by side in a horizontal direction above the horizontal transfer channel region and formed in the same layer as the vertical transfer electrodes, and a horizontal-to-horizontal transfer portion formed between adjacent two of the horizontal transfer registers and including a horizontal-to-horizontal transfer channel region interconnecting respective parts of the horizontal transfer channel regions positioned under the horizontal transfer electrodes to which the transfer drive pulses having different phases are applied, and a horizontal-to-horizontal transfer electrode formed above the horizontal-to-horizontal transfer channel region in the same layer as both the vertical transfer electrodes and the horizontal transfer electrodes.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_uspatents_grants_08319877
source USPTO Issued Patents
title Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T03%3A29%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Kanbe,%20Hideo&rft.aucorp=Sony%20Corporation&rft.date=2012-11-27&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E08319877%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true