Substrate processing apparatus and method
Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a chamber providing an internal space, in which a process is carried out onto a substrate; a gas supply unit supplying a source gas to the internal space; a coil generating an electric field in the...
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| creator | Yang, Il-Kwang |
| description | Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a chamber providing an internal space, in which a process is carried out onto a substrate; a gas supply unit supplying a source gas to the internal space; a coil generating an electric field in the internal space to generate plasma from the source gas; and an adjustment ring disposed on a flow path of the plasma toward a support member to adjust the flow of the plasma. The chamber includes a process chamber, in which the support member is provided and the process is carried out by the plasma; and a generation chamber, in which the plasma is generated by the coil, provided on the upper surface of the process chamber, and the adjustment ring is installed at the lower end of the generation chamber. |
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The substrate processing apparatus includes a chamber providing an internal space, in which a process is carried out onto a substrate; a gas supply unit supplying a source gas to the internal space; a coil generating an electric field in the internal space to generate plasma from the source gas; and an adjustment ring disposed on a flow path of the plasma toward a support member to adjust the flow of the plasma. The chamber includes a process chamber, in which the support member is provided and the process is carried out by the plasma; and a generation chamber, in which the plasma is generated by the coil, provided on the upper surface of the process chamber, and the adjustment ring is installed at the lower end of the generation chamber.</description><language>eng</language><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8312840$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,798,881,64012</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8312840$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Yang, Il-Kwang</creatorcontrib><creatorcontrib>Eugene Technology Co., Ltd</creatorcontrib><title>Substrate processing apparatus and method</title><description>Disclosed is a substrate processing apparatus and method. 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The substrate processing apparatus includes a chamber providing an internal space, in which a process is carried out onto a substrate; a gas supply unit supplying a source gas to the internal space; a coil generating an electric field in the internal space to generate plasma from the source gas; and an adjustment ring disposed on a flow path of the plasma toward a support member to adjust the flow of the plasma. The chamber includes a process chamber, in which the support member is provided and the process is carried out by the plasma; and a generation chamber, in which the plasma is generated by the coil, provided on the upper surface of the process chamber, and the adjustment ring is installed at the lower end of the generation chamber.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| source | USPTO Issued Patents |
| title | Substrate processing apparatus and method |
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